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公开(公告)号：US20110297842A1
公开(公告)日：2011-12-08
申请号：US13154913
申请日：2011-06-07
申请人： Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
发明人： Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
摘要： An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
摘要翻译： 离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数 计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域 成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度 从而保持在垂直方向上的剂量均匀性。
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公开(公告)号：US08735855B2
公开(公告)日：2014-05-27
申请号：US13154913
申请日：2011-06-07
申请人： Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
发明人： Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
摘要： An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
摘要翻译： 离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数 计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域 成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度 从而保持在垂直方向上的剂量均匀性。
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公开(公告)号：US08772741B2
公开(公告)日：2014-07-08
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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公开(公告)号：US20120252194A1
公开(公告)日：2012-10-04
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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公开(公告)号：US08772142B2
公开(公告)日：2014-07-08
申请号：US13426423
申请日：2012-03-21
申请人： Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
发明人： Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
IPC分类号： H01L21/425
CPC分类号： H01L21/265 , C23C14/48 , C23C14/542 , H01J37/3007 , H01J37/3023 , H01J37/3171 , H01J37/3172 , H01J2237/30483
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额
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