利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.018 秒)

    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
    1.
    发明授权
    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors 失效
    作为用于薄膜晶体管的n型半导体材料的芳基二羧酸二咪唑类化合物

    公开(公告)号：US07745821B2

    公开(公告)日：2010-06-29

    申请号：US11748622

    申请日：2007-05-15

    申请人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    发明人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

    摘要翻译： 薄膜晶体管包括包含基于芳基二羧酸二咪唑类化合物的有机半导体材料的有机半导体材料层。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过150℃。

    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    2.
    发明申请
    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 失效
    作为薄膜晶体管的N型半导体材料的ARYL DICARBOXYLIC ACID DIIMIDAZOLE-based COMPOUNDS

    公开(公告)号：US20080283826A1

    公开(公告)日：2008-11-20

    申请号：US11748622

    申请日：2007-05-15

    申请人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    发明人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC分类号： H01L51/40 ,  H01L51/30

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

    摘要翻译： 薄膜晶体管包括包含基于芳基二羧酸二咪唑类化合物的有机半导体材料的有机半导体材料层。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过150℃。

    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
    3.
    发明授权
    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors 有权
    作为用于薄膜晶体管的n型半导体材料的芳基二羧酸二咪唑类化合物

    公开(公告)号：US08187915B2

    公开(公告)日：2012-05-29

    申请号：US12731191

    申请日：2010-03-25

    申请人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    发明人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    摘要： A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

    摘要翻译： 制造薄膜半导体器件的方法包括以下步骤，但不一定按照所述顺序。 首先，将有机半导体材料的薄膜沉积在基板上。 这种有机半导体材料薄膜包括有机半导体材料，其包括一种或多种权利要求1的芳基二甲基二咪唑基化合物，使得该膜表现出大于0.005cm 2 / Vs的场效应电子迁移率。 然后，该工艺包括形成间隔开的源电极和漏电极，其中源极电极和漏极电极与n沟道半导体膜分离并与其电连接。 然后形成与半导体材料间隔开的栅电极。 可以将一个或多个薄膜半导体器件（或晶体管）并入电子器件中。

    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    4.
    发明申请
    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为薄膜晶体管的N型半导体材料的ARYL DICARBOXYLIC ACID DIIMIDAZOLE-based COMPOUNDS

    公开(公告)号：US20100178728A1

    公开(公告)日：2010-07-15

    申请号：US12731191

    申请日：2010-03-25

    申请人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    发明人： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    摘要： A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

    摘要翻译： 制造薄膜半导体器件的方法包括以下步骤，但不一定按照所述顺序。 首先，将有机半导体材料的薄膜沉积在基板上。 这种有机半导体材料薄膜包括有机半导体材料，其包括一种或多种权利要求1的芳基二甲基二咪唑基化合物，使得该膜表现出大于0.005cm 2 / Vs的场效应电子迁移率。 然后，该工艺包括形成间隔开的源电极和漏电极，其中源极电极和漏极电极与n沟道半导体膜分离并与其电连接。 然后形成与半导体材料间隔开的栅电极。 可以将一个或多个薄膜半导体器件（或晶体管）并入电子器件中。

    FUSED-FLUORENE-CONTAINING MATERIALS AS SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    5.
    发明申请
    FUSED-FLUORENE-CONTAINING MATERIALS AS SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 审中-公开
    作为薄膜晶体管的半导体材料的含氟荧光材料

    公开(公告)号：US20080283827A1

    公开(公告)日：2008-11-20

    申请号：US11748640

    申请日：2007-05-15

    申请人： Shiying Zheng ,  Diane C. Freeman

    发明人： Shiying Zheng ,  Diane C. Freeman

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0052 ,  H01L51/0043 ,  H01L51/0068 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises fused-fluorene-containing materials. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，该层包括含有熔融芴的材料的有机半导体材料。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是制造薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过150℃。

    N-type semiconductor materials for thin film transistors
    6.
    发明授权
    N-type semiconductor materials for thin film transistors 有权
    用于薄膜晶体管的N型半导体材料

    公开(公告)号：US07807994B2

    公开(公告)日：2010-10-05

    申请号：US12545337

    申请日：2009-08-21

    申请人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    IPC分类号： H01L51/00 ,  C07D471/02

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0008 ,  H01L51/0053 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    N,N'-DI(ARYLALKYL)-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    7.
    发明申请
    N,N'-DI(ARYLALKYL)-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    N，N'-DI（ARYLALKYL） - 作为N型薄膜晶体管的半导体材料的基于萘基的四嵌段二氧化二铝化合物

    公开(公告)号：US20090261323A1

    公开(公告)日：2009-10-22

    申请号：US12474533

    申请日：2009-05-29

    申请人： Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    发明人： Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0053 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0529 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    8.
    发明授权
    N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（芳基烷基）取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US07579619B2

    公开(公告)日：2009-08-25

    申请号：US11110076

    申请日：2005-04-20

    申请人： Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    发明人： Deepak Shukla ,  Shelby F. Nelson ,  Diane C. Freeman

    IPC分类号： H01L35/24

    CPC分类号： H01L51/0053 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0529 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    N-type semiconductor materials for thin film transistors
    9.
    发明授权
    N-type semiconductor materials for thin film transistors 有权
    用于薄膜晶体管的N型半导体材料

    公开(公告)号：US07629605B2

    公开(公告)日：2009-12-08

    申请号：US11263111

    申请日：2005-10-31

    申请人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    IPC分类号： H01L51/00 ,  C07D471/02

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0008 ,  H01L51/0053 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。