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公开(公告)号：US07807994B2
公开(公告)日：2010-10-05
申请号：US12545337
申请日：2009-08-21
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US20090312553A1
公开(公告)日：2009-12-17
申请号：US12545337
申请日：2009-08-21
IPC分类号： C07D471/06
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US07629605B2
公开(公告)日：2009-12-08
申请号：US11263111
申请日：2005-10-31
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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4.发明授权N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料公开(公告)号：US07422777B2
公开(公告)日：2008-09-09
申请号：US11285238
申请日：2005-11-22
IPC分类号： C09K19/00 , G03C5/00 , B32B27/00 , H01L29/08 , H01L21/322
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0545 , Y02E10/549 , Y10T428/10 , Y10T428/31721
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的脂环族系，任选被电子给体基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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5.发明授权Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权配位控制的N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料公开(公告)号：US07804087B2
公开(公告)日：2010-09-28
申请号：US11567954
申请日：2006-12-07
IPC分类号： H01L51/30 , C07D221/18
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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6.发明申请CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权作为N型半导体薄膜薄膜晶体管的配置控制N，N'-二烷基取代的基于萘二甲酸的四嵌段二胺二异氰酸酯化合物公开(公告)号：US20080135833A1
公开(公告)日：2008-06-12
申请号：US11567954
申请日：2006-12-07
IPC分类号： H01L51/40 , C07D471/22
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US20090081886A1
公开(公告)日：2009-03-26
申请号：US11861372
申请日：2007-09-26
申请人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
发明人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
IPC分类号： H01L21/311 , C23C16/00
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/458 , H01L29/4908 , Y10S438/908
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
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公开(公告)号：US20090217878A1
公开(公告)日：2009-09-03
申请号：US12464904
申请日：2009-05-13
申请人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
发明人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/458 , H01L29/4908 , Y10S438/908
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。 还公开了能够进行这种处理的系统。
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公开(公告)号：US20090081885A1
公开(公告)日：2009-03-26
申请号：US11861359
申请日：2007-09-26
申请人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
发明人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
IPC分类号： H01L21/311 , C23C16/00
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/45519 , C23C16/545
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气体材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应，其中一个或多个气体 流动提供至少有助于将衬底的表面与输送头的表面分离的压力。 还公开了能够进行这种处理的系统。
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公开(公告)号：US20140206137A1
公开(公告)日：2014-07-24
申请号：US13747505
申请日：2013-01-23
申请人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
发明人： David H. Levy , Roger S. Kerr , Jeffrey T. Carey
IPC分类号： C23C16/455 , H01L21/02
CPC分类号： C23C16/45551
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气体材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应，其中一个或多个气体 流动提供至少有助于将衬底的表面与输送头的表面分离的压力。 还公开了能够进行这种处理的系统。
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