公开(公告)号：US20060159146A1

公开(公告)日：2006-07-20

申请号：US11314243

申请日：2005-12-22

申请人： Sho Iwayama ,  Jun Minoura ,  Tamiyo Umezaki

发明人： Sho Iwayama ,  Jun Minoura ,  Tamiyo Umezaki

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02296 ,  H01S5/0282 ,  H01S5/34333 ,  H01S2301/176

摘要： In a semiconductor laser diode, a mount portion is erected on a support member and a semiconductor laser diode chip is mounted on the mount portion. A window is formed on a cap, and a laser beam generated by the semiconductor laser diode chip is emitted through the window to an outside. An optical thin film layer and a photocatalyst layer are formed on an end face of a resonator at a light output side of the semiconductor laser diode chip.

摘要翻译： 在半导体激光二极管中，安装部分竖立在支撑构件上，半导体激光二极管芯片安装在安装部分上。 窗口形成在盖上，并且由半导体激光二极管芯片产生的激光束通过窗口发射到外部。 在半导体激光二极管芯片的光输出侧的谐振器的端面上形成光学薄膜层和光催化剂层。

公开(公告)号：US06518599B2

公开(公告)日：2003-02-11

申请号：US09725495

申请日：2000-11-30

申请人： Tamiyo Umezaki ,  Yuta Tezen ,  Toshio Hiramatsu ,  Masayoshi Koike

发明人： Tamiyo Umezaki ,  Yuta Tezen ,  Toshio Hiramatsu ,  Masayoshi Koike

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/32

摘要： A light emitting device using a group III nitride group compound semiconductor is disclosed. The device includes a substrate, a group III nitride group compound semiconductor layer, and a rectangular parallelepiped stack Rd which is formed by etching multiple group III nitride group compound semiconductor layers laminated on the group III nitride group compound semiconductor layer. The group III nitride group compound semiconductor layer comprises regions, which have many defects and less defects, respectively, and are formed in a striped pattern. Each of the boundaries between the regions with less defects and more defects or a plane which includes a longitudinal edge of the buffer layer is vertical to the substrate and parallel to a longitudinal plane of the rectangular parallelepiped stack Rd. The boundaries and two stack facets Mrr of the rectangular parallelepiped stack Rd are parallel to each other.

摘要翻译： 公开了使用III族氮化物族化合物半导体的发光器件。 该装置包括通过蚀刻层叠在III族氮化物系化合物半导体层上的多个III族氮化物系化合物半导体层而形成的基板，III族氮化物系化合物半导体层和长方体叠层Rd。 III族氮化物类化合物半导体层分别包含具有许多缺陷和较少缺陷的区域，并且形成为条纹图案。 具有较少缺陷和更多缺陷的区域之间的边界中的每个边界或包括缓冲层的纵向边缘的平面垂直于基板并平行于长方体堆叠Rd的纵向平面。 矩形平行六面体堆叠Rd的边界和两个堆叠面Mrr彼此平行。