摘要:
A composite metal line structure for an integrated circuit structure on a semiconductor substrate is disclosed which comprises: a low resistance metal core layer; a first thin protective layer of electrically conductive material on the upper surface of the metal core layer capable of protecting the metal core layer from reaction with tungsten; a layer of tungsten formed over the first protective layer to function as an etch stop layer for vias subsequently formed in an overlying dielectric layer; and a second thin protective layer of electrically conductive material over the tungsten layer and capable of functioning as an antireflective coating (ARC). When a dielectric layer is formed over the composite metal line structure, tungsten-filled vias can be formed in the dielectric layer which will extend down through the second thin protective layer to provide direct electrical contact between the tungsten-filled via and the tungsten layer of the composite metal line structure, thereby providing a low resistance contact between the tungsten-filled via and the composite metal line structure.
摘要:
A metal interconnect stack for an integrated circuit structure is described comprising a main metal interconnect layer, an underlying TiN barrier layer and a titanium metal seed layer below the TiN barrier layer, and a barrier layer below the titanium metal seed layer to provide protection against chemical interaction between the titanium metal seed layer and an underlying plug in a via. The structure is formed by providing an integrated circuit structure having an insulation layer formed thereon with one or more metal-filled vias or contact openings generally vertically formed therethrough to have an upper surface thereon; forming a lower barrier layer such as a TiN barrier layer over the insulation layer and the upper surface of the metal in the one or more metal-filled vias; and subsequently forming the titanium seed layer over the lower TiN barrier layer. This new first TiN barrier layer then separates the surface of the metal in the one or more vias from the titanium seed layer in the metal interconnect stack to inhibit galvanic action between the metal in the one or more vias and the titanium seed layer. Preferably, the main metal interconnect layer is provided with a crystallographic orientation to enhance the electron migration of the main metal interconnect layer. To achieve this orientation in the main metal interconnect layer, the main titanium nitride barrier layer is preferably also provided with crystallographic orientation and the titanium metal seed layer functions as a seed layer for the second TiN barrier layer which will, in turn, act as a seed layer for the main metal interconnect layer. An optional third TiN barrier layer may be formed over the main metal interconnect layer.
摘要:
A method of making a metal interconnect stack for an integrated circuit structure is described comprising a main metal interconnect layer, an underlying TiN barrier layer and a titanium metal seed layer below the TiN barrier layer, and a barrier layer below the titanium metal seed layer to provide protection against chemical interaction between the titanium metal seed layer and an underlying plug in a via. The structure is formed by providing an integrated circuit structure having an insulation layer formed thereon with one or more metal-filled vias or contact openings generally vertically formed therethrough to have an upper surface thereon; forming a lower barrier layer such as a TiN barrier layer over the insulation layer and the upper surface of the metal in the one or more metal-filled vias; and subsequently forming the titanium seed layer over the lower TiN barrier layer. This new first TiN barrier layer then separates the surface of the metal in the one or more vias from the titanium seed layer in the metal interconnect stack to inhibit galvanic action between the metal in the one or more vias and the titanium seed layer. Preferably, the main metal interconnect layer is provided with a crystallographic orientation to enhance the electron migration of the main metal interconnect layer. To achieve this orientation in the main metal interconnect layer, the main titanium nitride barrier layer is preferably also provided with crystallographic orientation and the titanium metal seed layer functions as a seed layer for the second TiN barrier layer which will, in turn, act as a seed layer for the main metal interconnect layer. An optional third TiN barrier layer may be formed over the main metal interconnect layer.
摘要:
A method of multi-path power factor correction includes providing a plurality of energy transfer paths from a voltage-varying input to an output; delivering a first fraction of available input energy to one or more energy storage networks at the input of at least one of the plurality of energy transfer paths; delivering a second fraction of available input energy to the output; and adjusting the first fraction and second fraction for facilitating outputting a substantially constant output and for controlling the energy drawn from the input.
摘要:
An intelligent sourcing controller for sourcing potential suppliers from external sources such as the Internet as well as internal sources such as a local data server. The intelligent sourcing engine controller provides a supplier appraisal to the buyer as decision support. The intelligent sourcing controller integrates its supplier appraisal criteria with the buyer's sourcing criteria, classifying the collected information in the same way a buyer configures his requirements for the suppliers. The intelligent sourcing controller synchronizes the Internet sourcing results with the local data server after each search to renew data in the local data server in time and the sourcing criteria can be reused in future for decision support.
摘要:
Described are communication systems that convey differential and common-mode signals over the same differential channel. Noise-tolerant communication schemes use low-amplitude common-mode signals that are easily rejected by differential receivers, thus allowing for very high differential data rates. Some embodiments employ the common-mode signals to transmit backchannel signals for adjusting the characteristics of the differential transmitter. Backchannel control signals are effectively conveyed even if the forward channel transmitter is so maladjusted that the received differential data is unrecognizable. Systems in accordance with the above-described embodiments obtain these advantages without additional pins or communications channels, and are compatible with both AC-coupled and DC-coupled communications channels. Data coding schemes and corresponding data recovery circuits eliminate the need for complex, high-speed CDR circuits.
摘要:
A signaling system having an equalizing transmitter and equalizing receiver. The equalizing transmitter transmits a signal to a receive circuit. A first sampling circuit within the equalizing receiver samples the signal to determine whether the signal exceeds a first threshold, and a second sampling circuit within the equalizing receiver samples the signal to determine whether the signal exceeds a second threshold. A drive strength of the equalizing transmitter and a drive strength of an equalizing signal driver within the equalizer are adjusted based, at least in part, on whether the first signal exceeds the first and second thresholds.
摘要:
An integrated circuit device includes one or more calibration paths including one or more devices. A signal generator is coupled to at least one calibration path and configured to provide the calibration path with a calibration signal having known characteristics. A controller is coupled to the signal generator and the calibration path and configured to adjust the signal generator and at least one parameter associated with at least one device in the calibration path.
摘要:
An equalizing driver circuit is disclosed. In one particular exemplary embodiment, the equalizing driver circuit may comprise dedicated driver circuitry having a first current source switchably coupled to an output node of the driver circuit, wherein the first current source is configured to selectively draw a variable quantity of current. The equalizing driver circuit may also comprise allocated driver circuitry having a second current source switchably coupled to the output node, wherein the second current source is configured to draw a fixed quantity of current.
摘要:
Various systems and methods are provided for monitoring patient physiological data without the need for adhesives or wires to be connected to a patient. The system is also fully functional without the need for manipulation or intervention by a care provider or medical personnel. In particular, the system can include a pad having a plurality of electrical contacts or electrodes formed thereon in a predetermined pattern. The electrodes can be configured to sense electrical signals produced by a patient's body. A controller in communication with the electrodes can be configured to select and process signals from the electrodes and send the information derived from the electrical signals to an output device for displaying resulting physiological data so that the patient can be monitored.