Modified multilayered metal line structure for use with tungsten-filled
vias in integrated circuit structures
    1.
    发明授权
    Modified multilayered metal line structure for use with tungsten-filled vias in integrated circuit structures 失效
    用于集成电路结构中的钨填充通孔的改进的多层金属线结构

    公开(公告)号:US6147409A

    公开(公告)日:2000-11-14

    申请号:US98019

    申请日:1998-06-15

    摘要: A composite metal line structure for an integrated circuit structure on a semiconductor substrate is disclosed which comprises: a low resistance metal core layer; a first thin protective layer of electrically conductive material on the upper surface of the metal core layer capable of protecting the metal core layer from reaction with tungsten; a layer of tungsten formed over the first protective layer to function as an etch stop layer for vias subsequently formed in an overlying dielectric layer; and a second thin protective layer of electrically conductive material over the tungsten layer and capable of functioning as an antireflective coating (ARC). When a dielectric layer is formed over the composite metal line structure, tungsten-filled vias can be formed in the dielectric layer which will extend down through the second thin protective layer to provide direct electrical contact between the tungsten-filled via and the tungsten layer of the composite metal line structure, thereby providing a low resistance contact between the tungsten-filled via and the composite metal line structure.

    摘要翻译: 公开了一种用于半导体衬底上的集成电路结构的复合金属线结构,其包括:低电阻金属芯层; 金属芯层的上表面上的第一薄导电材料保护层,其能够保护金属芯层免受钨的反应; 形成在第一保护层上的钨层,用作随后在上覆介电层中形成的通孔的蚀刻停止层; 以及在钨层上方的能够用作抗反射涂层(ARC)的导电材料的第二薄保护层。 当在复合金属线结构上形成电介质层时,可以在电介质层中形成钨填充的通孔,该介电层将向下延伸穿过第二薄保护层,以在填充钨的通孔和钨层之间提供直接的电接触 复合金属线结构,从而在填充钨的通孔和复合金属线结构之间提供低电阻接触。

    Metal interconnect stack for integrated circuit structure
    2.
    发明授权
    Metal interconnect stack for integrated circuit structure 有权
    金属互连堆栈用于集成电路结构

    公开(公告)号:US06087726A

    公开(公告)日:2000-07-11

    申请号:US261270

    申请日:1999-03-01

    摘要: A metal interconnect stack for an integrated circuit structure is described comprising a main metal interconnect layer, an underlying TiN barrier layer and a titanium metal seed layer below the TiN barrier layer, and a barrier layer below the titanium metal seed layer to provide protection against chemical interaction between the titanium metal seed layer and an underlying plug in a via. The structure is formed by providing an integrated circuit structure having an insulation layer formed thereon with one or more metal-filled vias or contact openings generally vertically formed therethrough to have an upper surface thereon; forming a lower barrier layer such as a TiN barrier layer over the insulation layer and the upper surface of the metal in the one or more metal-filled vias; and subsequently forming the titanium seed layer over the lower TiN barrier layer. This new first TiN barrier layer then separates the surface of the metal in the one or more vias from the titanium seed layer in the metal interconnect stack to inhibit galvanic action between the metal in the one or more vias and the titanium seed layer. Preferably, the main metal interconnect layer is provided with a crystallographic orientation to enhance the electron migration of the main metal interconnect layer. To achieve this orientation in the main metal interconnect layer, the main titanium nitride barrier layer is preferably also provided with crystallographic orientation and the titanium metal seed layer functions as a seed layer for the second TiN barrier layer which will, in turn, act as a seed layer for the main metal interconnect layer. An optional third TiN barrier layer may be formed over the main metal interconnect layer.

    摘要翻译: 描述了一种用于集成电路结构的金属互连堆叠,其包括主金属互连层,下面的TiN阻挡层和TiN阻挡层下面的钛金属种子层,以及在钛金属种子层下面的阻挡层以提供防止化学 钛金属种子层与通孔中的下面的塞子之间的相互作用。 该结构通过提供一种集成电路结构形成,该集成电路结构具有在其上形成有一个或多个金属填充的通孔或通过其垂直形成的接触开口的绝缘层,以在其上具有上表面; 在一个或多个金属填充的通孔中在绝缘层和金属的上表面上形成诸如TiN阻挡层的下阻挡层; 随后在下部TiN阻挡层上形成钛籽晶层。 然后,该新的第一TiN阻挡层将金属互连叠层中的一个或多个通孔中的金属表面与钛籽晶层分离,以抑制一个或多个通孔中的金属与钛籽晶层之间的电流作用。 优选地,主金属互连层具有<111>晶体取向以增强主金属互连层的电子迁移。 为了在主金属互连层中实现这种<111>取向,主要的氮化钛阻挡层优选还具有<111>晶体取向,并且钛金属种子层用作第二TiN阻挡层的种子层, 又作为主金属互连层的籽晶层。 可以在主金属互连层上形成可选的第三TiN阻挡层。

    Process for forming metal interconnect stack for integrated circuit structure
    3.
    发明授权
    Process for forming metal interconnect stack for integrated circuit structure 有权
    用于形成用于集成电路结构的金属互连叠层的工艺

    公开(公告)号:US06174798B1

    公开(公告)日:2001-01-16

    申请号:US09427572

    申请日:1999-10-26

    IPC分类号: H01L214763

    摘要: A method of making a metal interconnect stack for an integrated circuit structure is described comprising a main metal interconnect layer, an underlying TiN barrier layer and a titanium metal seed layer below the TiN barrier layer, and a barrier layer below the titanium metal seed layer to provide protection against chemical interaction between the titanium metal seed layer and an underlying plug in a via. The structure is formed by providing an integrated circuit structure having an insulation layer formed thereon with one or more metal-filled vias or contact openings generally vertically formed therethrough to have an upper surface thereon; forming a lower barrier layer such as a TiN barrier layer over the insulation layer and the upper surface of the metal in the one or more metal-filled vias; and subsequently forming the titanium seed layer over the lower TiN barrier layer. This new first TiN barrier layer then separates the surface of the metal in the one or more vias from the titanium seed layer in the metal interconnect stack to inhibit galvanic action between the metal in the one or more vias and the titanium seed layer. Preferably, the main metal interconnect layer is provided with a crystallographic orientation to enhance the electron migration of the main metal interconnect layer. To achieve this orientation in the main metal interconnect layer, the main titanium nitride barrier layer is preferably also provided with crystallographic orientation and the titanium metal seed layer functions as a seed layer for the second TiN barrier layer which will, in turn, act as a seed layer for the main metal interconnect layer. An optional third TiN barrier layer may be formed over the main metal interconnect layer.

    摘要翻译: 描述了制造用于集成电路结构的金属互连堆叠的方法,其包括主金属互连层,下面的TiN阻挡层和在TiN阻挡层下面的钛金属种子层,以及在钛金属种子层下面的阻挡层, 提供防止钛金属种子层和通孔中的下面的插塞之间的化学相互作用的保护。 该结构通过提供一种集成电路结构形成,该集成电路结构具有在其上形成有一个或多个金属填充的通孔或通过其垂直形成的接触开口的绝缘层,以在其上具有上表面; 在一个或多个金属填充的通孔中在绝缘层和金属的上表面上形成诸如TiN阻挡层的下阻挡层; 随后在下部TiN阻挡层上形成钛籽晶层。 然后,该新的第一TiN阻挡层将金属互连叠层中的一个或多个通孔中的金属表面与钛籽晶层分离,以抑制一个或多个通孔中的金属与钛籽晶层之间的电流作用。 优选地,主金属互连层具有<111>晶体取向以增强主金属互连层的电子迁移。 为了在主金属互连层中实现这种<111>取向,主要的氮化钛阻挡层优选还具有<111>晶体取向,并且钛金属种子层用作第二TiN阻挡层的种子层, 又作为主金属互连层的籽晶层。 可以在主金属互连层上形成可选的第三TiN阻挡层。

    Sourcing controller
    5.
    发明授权
    Sourcing controller 有权
    采购控制器

    公开(公告)号:US08135713B2

    公开(公告)日:2012-03-13

    申请号:US11394470

    申请日:2006-03-31

    IPC分类号: G06F7/00

    CPC分类号: G06Q30/00 G06Q10/00

    摘要: An intelligent sourcing controller for sourcing potential suppliers from external sources such as the Internet as well as internal sources such as a local data server. The intelligent sourcing engine controller provides a supplier appraisal to the buyer as decision support. The intelligent sourcing controller integrates its supplier appraisal criteria with the buyer's sourcing criteria, classifying the collected information in the same way a buyer configures his requirements for the suppliers. The intelligent sourcing controller synchronizes the Internet sourcing results with the local data server after each search to renew data in the local data server in time and the sourcing criteria can be reused in future for decision support.

    摘要翻译: 一个智能采购控制器,用于从外部来源(如Internet)以及内部来源(如本地数据服务器)采购潜在供应商。 智能采购引擎控制器为买方提供供应商评估作为决策支持。 智能采购控制器将供应商评估标准与买方的采购标准相结合,将收集到的信息分类为买方配置供应商要求的相同方式。 智能采购控制器在每次搜索之后,将互联网采购结果与本地数据服务器同步,以便及时更新本地数据服务器中的数据,并且采购标准将来可以再次用于决策支持。

    Noise-tolerant signaling schemes supporting simplified timing and data recovery

    公开(公告)号:US20070297520A1

    公开(公告)日:2007-12-27

    申请号:US11895415

    申请日:2007-08-23

    IPC分类号: H04B1/10

    摘要: Described are communication systems that convey differential and common-mode signals over the same differential channel. Noise-tolerant communication schemes use low-amplitude common-mode signals that are easily rejected by differential receivers, thus allowing for very high differential data rates. Some embodiments employ the common-mode signals to transmit backchannel signals for adjusting the characteristics of the differential transmitter. Backchannel control signals are effectively conveyed even if the forward channel transmitter is so maladjusted that the received differential data is unrecognizable. Systems in accordance with the above-described embodiments obtain these advantages without additional pins or communications channels, and are compatible with both AC-coupled and DC-coupled communications channels. Data coding schemes and corresponding data recovery circuits eliminate the need for complex, high-speed CDR circuits.

    Circuit calibration system and method
    8.
    发明申请
    Circuit calibration system and method 有权
    电路校准系统及方法

    公开(公告)号:US20060132339A1

    公开(公告)日:2006-06-22

    申请号:US11015971

    申请日:2004-12-17

    IPC分类号: H03M1/10

    CPC分类号: H03M1/1023

    摘要: An integrated circuit device includes one or more calibration paths including one or more devices. A signal generator is coupled to at least one calibration path and configured to provide the calibration path with a calibration signal having known characteristics. A controller is coupled to the signal generator and the calibration path and configured to adjust the signal generator and at least one parameter associated with at least one device in the calibration path.

    摘要翻译: 集成电路装置包括包括一个或多个装置的一个或多个校准路径。 信号发生器耦合到至少一个校准路径并且被配置为向校准路径提供具有已知特征的校准信号。 控制器耦合到信号发生器和校准路径并且被配置为调整信号发生器和与校准路径中的至少一个设备相关联的至少一个参数。

    Equalizing driver circuit and method of operating same
    9.
    发明申请
    Equalizing driver circuit and method of operating same 审中-公开
    均衡驱动电路及操作方法

    公开(公告)号:US20060066350A1

    公开(公告)日:2006-03-30

    申请号:US10949372

    申请日:2004-09-27

    申请人: Fred Chen

    发明人: Fred Chen

    IPC分类号: H03K19/0175

    摘要: An equalizing driver circuit is disclosed. In one particular exemplary embodiment, the equalizing driver circuit may comprise dedicated driver circuitry having a first current source switchably coupled to an output node of the driver circuit, wherein the first current source is configured to selectively draw a variable quantity of current. The equalizing driver circuit may also comprise allocated driver circuitry having a second current source switchably coupled to the output node, wherein the second current source is configured to draw a fixed quantity of current.

    摘要翻译: 公开了均衡驱动电路。 在一个特定示例性实施例中,均衡驱动器电路可以包括具有可切换地耦合到驱动器电路的输出节点的第一电流源的专用驱动器电路,其中第一电流源被配置为选择性地绘制可变量的电流。 均衡驱动器电路还可以包括分配的驱动器电路,其具有可切换地耦合到输出节点的第二电流源,其中第二电流源被配置为绘制固定数量的电流。

    Patient monitoring systems and methods
    10.
    发明授权
    Patient monitoring systems and methods 有权
    患者监护系统和方法

    公开(公告)号:US08301219B2

    公开(公告)日:2012-10-30

    申请号:US12500031

    申请日:2009-07-09

    IPC分类号: A61B5/04 A61B5/0428

    CPC分类号: A61B5/04085 A61B5/6892

    摘要: Various systems and methods are provided for monitoring patient physiological data without the need for adhesives or wires to be connected to a patient. The system is also fully functional without the need for manipulation or intervention by a care provider or medical personnel. In particular, the system can include a pad having a plurality of electrical contacts or electrodes formed thereon in a predetermined pattern. The electrodes can be configured to sense electrical signals produced by a patient's body. A controller in communication with the electrodes can be configured to select and process signals from the electrodes and send the information derived from the electrical signals to an output device for displaying resulting physiological data so that the patient can be monitored.

    摘要翻译: 提供各种系统和方法用于监测患者生理数据,而不需要将粘合剂或电线连接到患者。 该系统也是完全功能的,而不需要护理提供者或医务人员的操纵或干预。 特别地,该系统可以包括具有以预定图案形成在其上的多个电触头或电极的焊盘。 电极可以被配置为感测由患者身体产生的电信号。 与电极通信的控制器可以被配置为选择和处理来自电极的信号,并将从电信号导出的信息发送到输出设备,以显示生成的生理数据,从而可以监视患者。