Large area silicon cone arrays fabrication and cone based nanostructure modification
    1.
    发明授权
    Large area silicon cone arrays fabrication and cone based nanostructure modification 有权
    大面积硅锥阵列制造和锥形纳米结构改性

    公开(公告)号:US06761803B2

    公开(公告)日:2004-07-13

    申请号:US10023418

    申请日:2001-12-17

    IPC分类号: C23C1434

    CPC分类号: H01J9/025 H01J2237/3151

    摘要: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

    摘要翻译: 已经开发了使用不同种类的离子束溅射方法制造大面积均匀硅锥阵列的方法和装置。 该装置包括作为硅源的硅衬底,并且使用金属箔作为催化剂。 还开发了用于场致发射应用的合成硅锥体的表面改性方法,包括氢氟酸蚀刻,退火和低功函数金属涂层。 基于硅锥的纳米结构改性利用了锥尖由金属/金属硅化物组成的事实,其可以用作纳米线生长的催化剂和模板。 已经开发了一种在硅锥顶端生长氧化硅/硅纳米线的方法和装置。