Gas Supply Unit and Gas Supply System
    1.
    发明申请
    Gas Supply Unit and Gas Supply System 有权
    天然气供应单位和供气系统

    公开(公告)号:US20090165872A1

    公开(公告)日:2009-07-02

    申请号:US12226416

    申请日:2006-06-02

    IPC分类号: F15C1/06

    摘要: A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed.

    摘要翻译: 气体供给单元和气体供给系统,其尺寸小且便宜。 气体供应单元安装在操作气体输送管道上,并具有通过流路块连接并控制操作气体的流体控制装置。 气体供应单元具有第一流路块,其一侧包括在流体控制装置中的入口打开/关闭阀,并且还具有第二流路块,其一侧包括一个净化阀 流体控制装置被连接。 第一流路块和第二流路块在与操作气体的输送方向垂直的方向上分层。 入口打开/关闭阀和净化阀布置在安装在操作气体输送管线上的质量流量控制器和安装单元的安装表面之间。

    Gas supply unit and gas supply system
    2.
    发明授权
    Gas supply unit and gas supply system 有权
    供气单元和供气系统

    公开(公告)号:US08104516B2

    公开(公告)日:2012-01-31

    申请号:US12226416

    申请日:2006-06-02

    IPC分类号: F16K11/10

    摘要: A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed.

    摘要翻译: 气体供给单元和气体供给系统,其尺寸小且便宜。 气体供应单元安装在操作气体输送管道上,并具有通过流路块连接并控制操作气体的流体控制装置。 气体供应单元具有第一流路块,其一侧包括在流体控制装置中的入口打开/关闭阀,并且还具有第二流路块,其一侧包括一个净化阀 流体控制装置被连接。 第一流路块和第二流路块在与操作气体的输送方向垂直的方向上分层。 入口打开/关闭阀和净化阀布置在安装在操作气体输送管线上的质量流量控制器和安装单元的安装表面之间。

    Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system
    3.
    发明授权
    Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system 有权
    半导体制造系统,半导体制造系统的流量校正方法和程序

    公开(公告)号:US07682843B2

    公开(公告)日:2010-03-23

    申请号:US11817104

    申请日:2006-06-28

    IPC分类号: H01L21/66

    摘要: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.

    摘要翻译: 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。

    Substrate Processing Device
    4.
    发明申请
    Substrate Processing Device 审中-公开
    基板处理装置

    公开(公告)号:US20080017105A1

    公开(公告)日:2008-01-24

    申请号:US11579113

    申请日:2005-06-17

    CPC分类号: G05D7/0658 B01J4/008

    摘要: Branch piping (18) branches off from the upstream side of opening/closing valves (13d, 14d) provided near the entrance of a processing chamber (11) of a gas supply system for supplying a processing gas, and the branch piping (18) is connected to gas discharge piping (17). In the branch piping (18) are provided a gas flow rate detection mechanism (19) and opening/closing valves (13h, 14h) for switching a flow path between the processing chamber (11) side and the branch piping (18) side. The gas flow rate detection mechanism (19) causes a gas to flow through a resistance body to measure a pressure across the resistance body, detecting a gas flow rate from the pressure difference. Mass flow controllers (13a, 14a) are tested or corrected by the detected value.

    摘要翻译: 分支管道(18)从设置在用于供给处理气体的供气系统的处理室(11)的入口附近的开/关阀(13d,14d)的上游侧分支,以及分支管道 18)连接到排气管道(17)。 在分支管道(18)中设置有用于切换处理室(11)侧和分支配管(18)之间的流路的开/关阀(13h,14h)的气体流量检测机构(19) 侧。 气体流量检测机构(19)使得气体流过电阻体以测量电阻体两端的压力,从压力差检测气体流量。 质量流量控制器(13 a,14 a)通过检测值进行测试或校正。

    SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM
    5.
    发明申请
    SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM 有权
    半导体制造系统和半导体制造系统的流量校正方法和程序

    公开(公告)号:US20090061541A1

    公开(公告)日:2009-03-05

    申请号:US11817104

    申请日:2006-06-28

    摘要: Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.

    摘要翻译: 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。

    JOINT
    6.
    发明申请
    JOINT 审中-公开
    联合

    公开(公告)号:US20140333067A1

    公开(公告)日:2014-11-13

    申请号:US14346118

    申请日:2012-09-11

    IPC分类号: F16L23/036

    摘要: Provided is a joint which can decrease the number of kinds of parts. A bolt 5 has a shaft portion 14 which is constituted of a distal end portion on which male threads 14a are formed and a remaining portion 14b on which male threads are not formed. First and second joint members 2, 3 have the same shape. A shaft insertion hole 15 which is disposed on an abutting end surface side of the joint member and a threaded hole 16 which is communicated with the shaft insertion hole 15 and extends to an end surface of the joint member on a side opposite to an abutting end surface of the joint member are formed in the first and second joint members 2, 3.

    摘要翻译: 提供可以减少部件种类的数量的接头。 螺栓5具有轴部14,其由形成有公螺纹14a的前端部和未形成有公螺纹的剩余部14b构成。 第一和第二接头构件2,3具有相同的形状。 设置在接头构件的抵接端面侧的轴插入孔15和与轴插入孔15连通并在与抵接端相反的一侧延伸到接头构件的端面的螺纹孔16 接头构件的表面形成在第一和第二接头构件2,3中。

    Pipe joint
    7.
    发明授权
    Pipe joint 有权
    管接头

    公开(公告)号:US09435470B2

    公开(公告)日:2016-09-06

    申请号:US14346096

    申请日:2012-09-11

    CPC分类号: F16L19/0212 F16L19/0286

    摘要: A pipe joint for preventing fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members are joined to each other by a male threaded member formed on one joint member and a female threaded member formed on the other joint member. A cover portion which covers outer peripheral surfaces of abutting portions of both joint members is formed on the male threaded member.

    摘要翻译: 一种管接头,用于防止当外螺纹构件和内螺纹构件彼此螺纹接合时产生的细颗粒进入流体通道,从而保持高度的清洁度。 接头构件通过形成在一个接头构件上的外螺纹构件和形成在另一接头构件上的内螺纹构件彼此接合。 在阳螺纹部件上形成覆盖两个接合部件的抵接部的外周面的盖部。

    PIPE JOINT
    8.
    发明申请
    PIPE JOINT 有权
    管接头

    公开(公告)号:US20140312617A1

    公开(公告)日:2014-10-23

    申请号:US14346096

    申请日:2012-09-11

    IPC分类号: F16L19/02

    CPC分类号: F16L19/0212 F16L19/0286

    摘要: Provided is a pipe joint which can prevent fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members 2, 3 are joined to each other by a male threaded member 6 formed on one joint member 2 and a female threaded member 7 formed on the other joint member 3. A cover portion 16 which covers outer peripheral surfaces of abutting portions of both joint members 2, 3 is formed on the male threaded member 6.

    摘要翻译: 提供一种管接头,其可以防止当阳螺纹构件和阴螺纹构件彼此螺纹接合时产生的细颗粒进入流体通道,从而保持高度的清洁度。 接头构件2,3通过形成在一个接头构件2上的外螺纹构件6和形成在另一接头构件3上的内螺纹构件7彼此连接。覆盖部分16覆盖两者的邻接部分的外周表面 接头构件2,3形成在外螺纹构件6上。

    Thermal type mass flow meter, and thermal type mass flow control device
    9.
    发明授权
    Thermal type mass flow meter, and thermal type mass flow control device 有权
    热式质量流量计,热式质量流量控制装置

    公开(公告)号:US08219329B2

    公开(公告)日:2012-07-10

    申请号:US12295037

    申请日:2007-05-23

    IPC分类号: G01F1/00 G01F1/12

    摘要: A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.

    摘要翻译: 热质量流量计和热质量流量控制装置即使处于紧凑且廉价的结构中也能解决热虹吸误差,而不使用流路转换块。 控制计算处理部分被配置为通过基于在将流体流动路径和流量测量导管减压到大气压或更低时的测量值计算校正值来校正由热虹吸引起的测量误差,测量之间的差异 值和在将实际流体充入流量测量导管时的测量值,实际流体的种类,对实际流体充电时的压力以及在流体流动路径中流动的流体的流量比和流量 测量管道,存储校正值,以及通过存储的校正值校正实际测量的输出流量值。

    THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE
    10.
    发明申请
    THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE 有权
    热式流量计和热式流量控制装置

    公开(公告)号:US20110125445A1

    公开(公告)日:2011-05-26

    申请号:US12295037

    申请日:2007-05-23

    IPC分类号: G01L27/00

    摘要: The present invention provides a thermal type mass flow meter and a thermal type mass flow control device which can lower a measurement error caused by an influence of a thermal siphon phenomenon so as to intend to improve a flow rate measurement precision while it is possible to construct a whole compactly and inexpensively with a simple structure, without using any flow path converting block.The present invention has a CPU for correction computing process which works to cancel a measurement error caused by an influence of a thermal siphon phenomenon by calculating a correction value based on a measurement value at a time of depressurizing a fluid flow path in a block and a flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at a time of charging an actual fluid into the flow rate measuring conduit, a kind of the actual fluid, a pressure at a time of charging the actual fluid, and a flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output value by the correction value.

    摘要翻译: 本发明提供一种热式质量流量计和热式质量流量控制装置,其可以降低由热虹吸现象引起的测量误差,从而有助于提高流量测量精度,同时可以构造 整体紧凑且廉价,结构简单,无需任何流路转换块。 本发明具有用于校正计算处理的CPU,其通过基于在块中的流体流路减压时的测量值计算校正值来消除由热虹吸现象的影响引起的测量误差, 流量测量管道到大气压力或更低,测量值与将实际流体充入流量测量管道时的测量值之间的差异,实际流体的种类,充电时的压力 实际流体以及在流体流路和流量测量导管中流动的流体的流量比,存储校正值,并将实际测量的输出值校正校正值。