摘要:
According to one embodiment, a perpendicular magnetic recording medium includes at least one soft magnetic underlayer above a substrate, a seed layer above the at least one soft magnetic underlayer, an intermediate layer above the seed layer, a magnetic recording layer above the intermediate layer, and an overcoat layer above the magnetic recording layer, wherein the seed layer includes a second seed layer above a first seed layer. In another embodiment, the seed layer is a multilayered structure of at least two cycles of a unit of layered film which includes a first seed layer and a second seed layer. The first seed layer includes a non-magnetic alloy having a Face-Centered-Cubic (FCC) structure, and the second seed layer includes a soft magnetic alloy having a FCC structure. Other structures are also disclosed, according to more embodiments.
摘要:
In one embodiment, a perpendicular magnetic recording medium includes an oxide recording layer including an oxide and a non-oxide recording layer which does not contain an oxide positioned above the oxide recording layer. The oxide recording layer includes a region R1 where a grain boundary width in a direction parallel to a plane of formation of R1 increases therealong from a lowermost portion of the oxide recording layer toward a medium surface, a region R3 positioned above R1 wherein a grain boundary width increases therealong toward the medium surface, a region R2 where a grain boundary width of R2 decreases therealong from R1 to R3, with R2 being positioned between R1 and R3, and a region R4 where a grain boundary width of R4 decreases therealong from R3 toward the medium surface, with R4 being positioned above R3 and near an uppermost portion of the oxide recording layer.
摘要:
In one embodiment, a perpendicular magnetic recording medium includes an oxide recording layer including an oxide and a non-oxide recording layer which does not contain an oxide positioned above the oxide recording layer. The oxide recording layer includes a region R1 where a grain boundary width in a direction parallel to a plane of formation of R1 increases therealong from a lowermost portion of the oxide recording layer toward a medium surface, a region R3 positioned above R1 wherein a grain boundary width increases therealong toward the medium surface, a region R2 where a grain boundary width of R2 decreases therealong from R1 to R3, with R2 being positioned between R1 and R3, and a region R4 where a grain boundary width of R4 decreases therealong from R3 toward the medium surface, with R4 being positioned above R3 and near an uppermost portion of the oxide recording layer.
摘要:
According to one embodiment, a perpendicular magnetic recording medium includes a first granular recording layer characterized by a magnetic anisotropy Ku1, a second granular recording layer above the first granular recording layer characterized by a magnetic anisotropy Ku2, and a third granular recording layer above the second granular recording layer characterized by a magnetic anisotropy Ku3, wherein Ku3 Ku1. In another embodiment, a magnetic medium includes a first recording layer with a first CoCrPt alloy in a first ratio X1, a second recording layer above the first recording layer and having a second CoCrPt alloy in a second ratio X2, and a third recording layer above the second recording layer having a third CoCrPt alloy in a third ratio X3 with each ratio defined as a concentration of Pt divided by a concentration of Cr in the respective CoCrPt alloy, wherein X3 X1.
摘要:
According to one embodiment, a PMRM includes a substrate, a soft magnetic underlayer above the substrate, an underlayer above the soft magnetic underlayer, an oxide-containing magnetic layer above the underlayer, and a ferromagnetic layer above the magnetic layer having no oxides. The underlayer controls orientation and segregation of the magnetic layer. The oxide-containing magnetic layer comprises at least two or more magnetic layers, a Cr concentration of the magnetic layer adjacent to the ferromagnetic metal layer is between about 23 at. % and about 32 at. %, and a difference between the Cr concentration of the magnetic layer adjacent to the ferromagnetic metal layer and a magnetic layer having a lowest Cr concentration among the at least three magnetic layers is less than about 25 at. %, the magnetic layer with a lowest Cr concentration has a granular structure, and a nucleation field is greater than about 159.2 kA/m.
摘要:
According to one embodiment, a perpendicular magnetic recording medium includes at least one soft magnetic underlayer above a substrate, a seed layer above the at least one soft magnetic underlayer, an intermediate layer above the seed layer, a magnetic recording layer above the intermediate layer, and an overcoat layer above the magnetic recording layer, wherein the seed layer includes a second seed layer above a first seed layer. In another embodiment, the seed layer is a multilayered structure of at least two cycles of a unit of layered film which includes a first seed layer and a second seed layer. The first seed layer includes a non-magnetic alloy having a Face-Centered-Cubic (FCC) structure, and the second seed layer includes a soft magnetic alloy having a FCC structure. Other structures are also disclosed, according to more embodiments.
摘要:
According to one embodiment, a PMRM includes a substrate, a soft magnetic underlayer above the substrate, an underlayer above the soft magnetic underlayer, an oxide-containing magnetic layer above the underlayer, and a ferromagnetic layer above the magnetic layer having no oxides. The underlayer controls orientation and segregation of the magnetic layer. The oxide-containing magnetic layer comprises at least two or more magnetic layers, a Cr concentration of the magnetic layer adjacent to the ferromagnetic metal layer is between about 23 at. % and about 32 at. %, and a difference between the Cr concentration of the magnetic layer adjacent to the ferromagnetic metal layer and a magnetic layer having a lowest Cr concentration among the at least three magnetic layers is less than about 25 at. %, the magnetic layer with a lowest Cr concentration has a granular structure, and a nucleation field is greater than about 159.2 kA/m.
摘要:
A perpendicular magnetic recording medium is manufactured having excellent thermal stability and recording performances across the entire disk surface. In one embodiment, the recording layer includes at least two layers deposited by using a reactive sputtering method under an oxygen-containing atmosphere at a deposition rate larger than the second recording layer which is formed on the first recording layer while depositing the first recording layer on the intermediate layer.
摘要:
According to one embodiment, a magnetic recording medium includes a magnetic recording layer formed above a substrate, comprising: a first magnetic layer formed from a [Co/Pt]n multilayered film, wherein the first magnetic layer has a face-centered cubic (fcc) (111) crystal structure, the (111) direction being perpendicular to a film surface thereof, and a second magnetic layer comprising a CoCrPt or CoCrPt alloy film formed above the first magnetic layer, wherein the second magnetic layer has a hexagonal close packed (hcp) (00.1) crystal structure, the (00.1) direction being perpendicular to a film surface thereof. According to another embodiment, a system includes a magnetic recording medium as described above, a magnetic head for reading from and/or writing to the magnetic recording medium, a magnetic head slider for supporting the magnetic head, and a control unit coupled to the magnetic head for controlling operation of the magnetic head.
摘要:
Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO2 for deposition on the intermediate layer. The top surface of the insulation material (SiO2) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.