公开(公告)号：US20090159885A1

公开(公告)日：2009-06-25

申请号：US12336614

申请日：2008-12-17

申请人： Shunpei YAMAZAKI ,  Kunio HOSOYA ,  Yasutaka SUZUKI ,  Saishi FUJIKAWA

发明人： Shunpei YAMAZAKI ,  Kunio HOSOYA ,  Yasutaka SUZUKI ,  Saishi FUJIKAWA

IPC分类号： H01L29/861 ,  H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor which includes a microcrystalline semiconductor film over a gate electrode with a gate insulating film interposed therebetween to be in an inner region in which end portions of microcrystalline semiconductor film are in an inside of end portions of the gate electrode, an amorphous semiconductor film which covers top and side surfaces of the microcrystalline semiconductor film, and an impurity semiconductor film to which an impurity element imparting one conductivity is added, and which forms a source region and a drain region, wherein the microcrystalline semiconductor film includes an impurity element serving as a donor is provided to reduce off current of a thin film transistor, to reduce reverse bias current of a diode, and to improve an image quality of a display device using a thin film transistor.

摘要翻译： 一种薄膜晶体管，其在栅极电极上方具有栅极绝缘膜，该微晶半导体膜位于其内部区域，其中微晶半导体膜的端部位于栅电极的端部的内部，非晶半导体 覆盖微晶半导体膜的顶表面和侧表面的膜，以及添加了赋予一种导电性的杂质元素的杂质半导体膜，并且形成源区和漏区，其中微晶半导体膜包括供给的杂质元素 为了降低薄膜晶体管的电流而减小二极管的反向偏置电流，并且提高使用薄膜晶体管的显示装置的图像质量，作为供体被提供。