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公开(公告)号:US09331207B2
公开(公告)日:2016-05-03
申请号:US13937591
申请日:2013-07-09
申请人: Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
发明人: Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
IPC分类号: H01L29/10 , H01L29/786 , H01L29/201
CPC分类号: H01L29/7869 , H01L29/201
摘要: A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.
摘要翻译: 半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜,源电极和漏电极上的氧化物绝缘膜。 源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜,在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。 第二金属膜形成在比第一金属膜的端部的内侧。
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公开(公告)号:US20090305503A1
公开(公告)日:2009-12-10
申请号:US12408375
申请日:2009-03-20
申请人: Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
发明人: Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
IPC分类号: H01L21/306
CPC分类号: G06K19/07749 , G06K19/07779 , G06K19/07783 , H01L21/32134 , H01L21/32136 , H01L21/76829 , H01L21/76838 , H01L23/53223 , H01L27/124 , H01L27/1266 , H01L27/13 , H01L2924/0002 , H01L2924/00
摘要: A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.
摘要翻译: 通过湿式蚀刻将厚度等于或大于1μm且等于或小于10μm的铝或铝合金的导电膜蚀刻成预定厚度,然后通过干法蚀刻进行蚀刻, 可以抑制导电膜的蚀刻,并且可以抑制掩模的厚度减小。 导电膜的侧蚀刻的抑制和掩模的厚度减小的抑制使得能够使含有铝或铝合金的导电膜即使具有等于或大于1μm以上并且等于或小于10μm的厚度 被蚀刻使得导电膜的边缘部分的梯度可以陡峭,可以获得预定厚度的导电膜,并且可以抑制与掩模图案的形状差异。
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公开(公告)号:US08399356B2
公开(公告)日:2013-03-19
申请号:US12408375
申请日:2009-03-20
申请人: Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
发明人: Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
IPC分类号: H01L21/306
CPC分类号: G06K19/07749 , G06K19/07779 , G06K19/07783 , H01L21/32134 , H01L21/32136 , H01L21/76829 , H01L21/76838 , H01L23/53223 , H01L27/124 , H01L27/1266 , H01L27/13 , H01L2924/0002 , H01L2924/00
摘要: A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.
摘要翻译: 通过湿式蚀刻将厚度等于或大于1μm且等于或小于10μm的铝或铝合金的导电膜蚀刻成预定厚度,然后通过干法蚀刻进行蚀刻, 可以抑制导电膜的蚀刻,并且可以抑制掩模的厚度减小。 导电膜的侧蚀刻的抑制和掩模的厚度减小的抑制使得能够将具有等于或大于1μm并且等于或小于10μm的大的厚度的含有铝或铝合金的导电膜与 被蚀刻使得导电膜的边缘部分的梯度可以陡峭,可以获得预定厚度的导电膜,并且可以抑制与掩模图案的形状差异。
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