Fuel cell having micro sensors
    1.
    发明申请
    Fuel cell having micro sensors 审中-公开
    具有微型传感器的燃料电池

    公开(公告)号:US20070141414A1

    公开(公告)日:2007-06-21

    申请号:US11410894

    申请日:2006-04-26

    IPC分类号: H01M8/04 H01M8/02

    摘要: A fuel cell having micro sensors is disclosed. It has a pair of bipolar plates and a catalytic portion. About each bipolar plate, it has an inner surface and an outer surface. There are a fluid inlet, a fluid outlet, a channel, one or more micro sensors and several signal lines disposed on this inner surface. This catalytic portion is disposed between two bipolar plates. So, it can detect the actual internal conditions in the fuel cell. There is no need to install extra micro sensors. And, the fuel cell stability and safety can be enhanced significantly.

    摘要翻译: 公开了一种具有微型传感器的燃料电池。 它有一对双极板和催化部分。 关于每个双极板,它具有内表面和外表面。 流体入口,流体出口,通道,一个或多个微传感器以及设置在该内表面上的若干信号线。 该催化部分设置在两个双极板之间。 因此,它可以检测燃料电池中的实际内部条件。 没有必要安装额外的微型传感器。 而且,燃料电池的稳定性和安全性可以显着提高。

    Manufacturing method of fuel cell with integration of catalytic layer and micro sensors
    2.
    发明申请
    Manufacturing method of fuel cell with integration of catalytic layer and micro sensors 审中-公开
    燃料电池的制造方法与催化层和微型传感器相结合

    公开(公告)号:US20070281853A1

    公开(公告)日:2007-12-06

    申请号:US11806533

    申请日:2007-06-01

    IPC分类号: H01M4/88 B05D5/12

    摘要: This invention is to introduce a manufacturing method of fuel cell with integration of catalytic layer and micro sensors, which comprises following steps: manufacturing multi-hole silicon layer step, generating catalytic layer step, forming insulation layer step, integrating micro sensors step, and finalizing step. With the function of gas-diffusion layer in the multi-hole silicon wafer and multiple catalytic grains evenly spread over the inner walls of flow-way holes of the silicon wafer, a great catalytic layer can be formed effectively. Further, micro sensors properly are integrated. This invention's merits include simple structure and capabilities of simultaneously detecting temperature and humidity. Plus, it can heat up internally for a fuel cell.

    摘要翻译: 本发明是介绍一种具有催化层和微型传感器一体化的燃料电池的制造方法,其包括以下步骤:制造多孔硅层步骤,产生催化层步骤,形成绝缘层步骤,集成微传感器步骤,最终确定 步。 通过多孔硅晶片中的气体扩散层的功能和多个催化颗粒均匀地分布在硅晶片的流通孔的内壁上,可以有效地形成大的催化层。 此外,微型传感器被整合。 本发明的优点包括同时检测温湿度的简单结构和能力。 另外,它可以内部加热燃料电池。

    Combined electrochemical machining and electropolishing micro-machining apparatus and method
    3.
    发明申请
    Combined electrochemical machining and electropolishing micro-machining apparatus and method 审中-公开
    组合电化学加工和电抛光微加工设备及方法

    公开(公告)号:US20070138023A1

    公开(公告)日:2007-06-21

    申请号:US11486015

    申请日:2006-07-14

    IPC分类号: B23H5/02

    CPC分类号: B23H3/00 B23H3/08 C25F3/16

    摘要: A combined electrochemical machining and electropolishing micro-machining method includes the steps of (1) preparing step, (2) first-stage processing step, (3) second-stage processing step, and (4) finishing step. The apparatus includes an electrochemical machining solution container, an electropolishing solution container, a metal workpiece connecting with an anode, a mold-plate portion connecting with a cathode. Based on this arrangement, the metal workpiece is immersed in a first working fluid to conduct the electrochemical machining process and then to be immersed in a second working fluid to conduct the electropolishing process. So, the overall micro-machining speed is fast. It can improve the surface roughness significantly. It is suitable for extremely hard metal workpiece.

    摘要翻译: 组合电化学加工和电抛光微加工方法包括以下步骤:(1)准备步骤,(2)第一阶段加工步骤,(3)第二阶段加工步骤和(4)精加工步骤。 该设备包括电化学加工溶液容器,电抛光溶液容器,与阳极连接的金属工件,与阴极连接的模板部分。 基于这种布置,将金属工件浸入第一工作流体中以进行电化学加工过程,然后浸入第二工作流体中以进行电解抛光工艺。 因此,整体微加工速度快。 显着提高表面粗糙度。 适用于极硬金属工件。

    METHOD OF FABRICATING HIGH-K METAL GATE DEVICES
    4.
    发明申请
    METHOD OF FABRICATING HIGH-K METAL GATE DEVICES 有权
    制造高K金属栅极器件的方法

    公开(公告)号:US20100178772A1

    公开(公告)日:2010-07-15

    申请号:US12354394

    申请日:2009-01-15

    IPC分类号: H01L21/306

    摘要: The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F—] concentration greater than 0.01 M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.

    摘要翻译: 本公开提供了一种用于制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底,在半导体衬底上形成高k电介质层,通过原位沉积工艺形成第一金属层和第一硅层,图案化第一硅 以去除覆盖在第二区域上的部分,使用图案化的第一硅层作为掩模来图案化第一金属层,以及去除图案化的第一硅层,包括施加溶液。 该溶液包括具有大于0.01M的[F-]浓度的第一组分,被配置为将溶液的pH调节至约4.3至约6.7的第二组分,以及将溶液的电位调节为 大于-1.4伏。

    Method of fabricating high-k metal gate devices
    5.
    发明授权
    Method of fabricating high-k metal gate devices 有权
    制造高k金属栅极器件的方法

    公开(公告)号:US07776757B2

    公开(公告)日:2010-08-17

    申请号:US12354394

    申请日:2009-01-15

    IPC分类号: H01L21/302

    摘要: The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.

    摘要翻译: 本公开提供了一种用于制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底,在半导体衬底上形成高k电介质层,通过原位沉积工艺形成第一金属层和第一硅层,图案化第一硅 以去除覆盖在第二区域上的部分,使用图案化的第一硅层作为掩模来图案化第一金属层,以及去除图案化的第一硅层,包括施加溶液。 该溶液包括具有大于0.01M的[F-]浓度的第一组分,构成为将溶液的pH调节至约4.3至约6.7的第二组分,以及构成为将溶液的电位调节为 大于-1.4伏。