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公开(公告)号：US20200071847A1
公开(公告)日：2020-03-05
申请号：US16492000
申请日：2018-03-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1-1018 cm-3 from the mean concentration of this dopant in the peripheral region (104).
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2.发明公开公开(公告)号：US20240309545A1
公开(公告)日：2024-09-19
申请号：US18595130
申请日：2024-03-04
申请人： SiCrystal GmbH
CPC分类号： C30B23/06 , C30B29/36 , C30B35/002
摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).
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公开(公告)号：US20220090296A1
公开(公告)日：2022-03-24
申请号：US17544868
申请日：2021-12-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).
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4.发明公开公开(公告)号：US20240263347A1
公开(公告)日：2024-08-08
申请号：US18425532
申请日：2024-01-29
申请人： SiCrystal GmbH
CPC分类号： C30B23/066 , C30B29/36
摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.
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5.发明公开公开(公告)号：US20240263346A1
公开(公告)日：2024-08-08
申请号：US18422958
申请日：2024-01-25
申请人： SiCrystal GmbH
CPC分类号： C30B23/066 , C30B29/36
摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.
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公开(公告)号：US20230193508A1
公开(公告)日：2023-06-22
申请号：US18172202
申请日：2023-02-21
申请人： SICRYSTAL GMBH
CPC分类号： C30B23/025 , C30B29/06 , C30B29/36 , Y10T428/24942
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm−3 from the mean concentration of this dopant in the peripheral region (104).
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公开(公告)号：US20210148006A1
公开(公告)日：2021-05-20
申请号：US16492044
申请日：2018-03-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).
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