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公开(公告)号：US11781245B2
公开(公告)日：2023-10-10
申请号：US17544868
申请日：2021-12-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).
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2.发明公开公开(公告)号：US20240318352A1
公开(公告)日：2024-09-26
申请号：US18598090
申请日：2024-03-07
申请人： SiCrystal GmbH
发明人： Bernhard Ecker , Maximilian Kowasch , Ralf Müller , Philipp Schuh , Matthias Stockmeier , Daisuke Takegawa , Michael Vogel , Arnd-Dietrich Weber
CPC分类号： C30B33/02 , C30B29/36 , F27B17/0016 , F27D5/0037
摘要： Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.
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公开(公告)号：US11236438B2
公开(公告)日：2022-02-01
申请号：US16492044
申请日：2018-03-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).
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公开(公告)号：US20240309546A1
公开(公告)日：2024-09-19
申请号：US18581200
申请日：2024-02-19
申请人： SiCrystal GmbH
CPC分类号： C30B23/066 , C30B29/36
摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.
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公开(公告)号：US20230078982A1
公开(公告)日：2023-03-16
申请号：US17976191
申请日：2022-10-28
申请人： SiCrystal GmbH
摘要： The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.
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公开(公告)号：US11515140B2
公开(公告)日：2022-11-29
申请号：US16409706
申请日：2019-05-10
申请人： SiCrystal GmbH
摘要： The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.
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7.发明公开公开(公告)号：US20240309545A1
公开(公告)日：2024-09-19
申请号：US18595130
申请日：2024-03-04
申请人： SiCrystal GmbH
CPC分类号： C30B23/06 , C30B29/36 , C30B35/002
摘要： The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).
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8.发明公开公开(公告)号：US20240003054A1
公开(公告)日：2024-01-04
申请号：US18466188
申请日：2023-09-13
申请人： SiCrystal GmbH
CPC分类号： C30B29/36 , C30B23/025 , C30B23/066 , C30B23/002 , C30B23/063
摘要： An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.
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9.发明公开公开(公告)号：US20230416939A1
公开(公告)日：2023-12-28
申请号：US18466184
申请日：2023-09-13
申请人： SiCrystal GmbH
IPC分类号： C30B23/02 , C30B29/36 , C01B32/956
CPC分类号： C30B23/025 , C30B29/36 , C01B32/956
摘要： A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.
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公开(公告)号：US11624124B2
公开(公告)日：2023-04-11
申请号：US16492000
申请日：2018-03-07
申请人： SICRYSTAL GMBH
摘要： The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1-1018 cm-3 from the mean concentration of this dopant in the peripheral region (104).
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