公开(公告)号：US20140154891A1

公开(公告)日：2014-06-05

申请号：US13931624

申请日：2013-06-28

申请人： SiOnyx, Inc.

发明人： Keith Donaldson ,  Jason Sickler ,  James E. Carey ,  Romek Nowak

IPC分类号： H01L21/324 ,  H01L21/67 ,  G21K5/08

摘要： Devices, systems, and methods for laser processing semiconductor materials are provided. In one aspect, a system for uniformly laser irradiating at least one wafer can include a wafer platter operable to receive and support a one or more wafers, a rotational movement system coupled to the wafer platter, the rotational movement system being operable to rotate the wafer platter in at least one of a clockwise or a counter clockwise direction, and a linear movement system coupled to the wafer platter and operable to move the wafer platter along one or more linear axes. The system can also include a laser source oriented to deliver laser radiation onto a wafer supported by the wafer platter at a fixed angle relative to the surface of the wafer, where the rotational movement system and the linear movement system are operable to maintain the fixed angle across the entirety of the wafer surface.

摘要翻译： 提供了用于激光加工半导体材料的装置，系统和方法。 在一个方面，用于均匀激光照射至少一个晶片的系统可以包括可操作以接收和支撑一个或多个晶片的晶片盘片，连接到晶片片的旋转运动系统，所述旋转运动系统可操作以使晶片 在顺时针或逆时针方向中的至少一个盘片上，以及耦合到晶片盘片的线性移动系统，并且可操作以沿着一个或多个直线轴线移动晶片盘片。 该系统还可以包括激光源，其定向为以相对于晶片表面固定的角度将激光辐射传送到由晶片片支撑的晶片上，其中旋转运动系统和线性运动系统可操作以保持固定角度 跨越整个晶片表面。

公开(公告)号：US20140048899A1

公开(公告)日：2014-02-20

申请号：US13764512

申请日：2013-02-11

申请人： SIONYX, INC.

发明人： Jason Sickler ,  Christopher Vineis ,  James E. Carey

IPC分类号： H01L31/18 ,  H01L31/0236

CPC分类号： H01L31/02363 ,  B23K26/0624 ,  B23K26/355 ,  H01L21/268 ,  Y02E10/50

摘要： Methods for laser processing semiconductor materials for use in optoelectronic and other devices, including materials, devices, and systems associated therewith are provided. In one aspect, a method of minimizing laser-induced material damage while laser-texturing a semiconductor material can include delivering short pulse duration laser radiation to a target region of a semiconductor material to form a textured region having a reorganized surface layer, wherein the laser radiation has a wavelength from about 200 nm to about 600 nm and a pulse duration of from about 10 femtoseconds to about 400 picoseconds, and wherein defect density of the semiconductor material from beneath the reorganized surface layer up to a depth of about 1 micron is less than or equal to about 1012/cm3.

摘要翻译： 提供了用于激光处理用于光电子器件和其他器件的半导体材料的方法，包括与其相关的材料，器件和系统。 在一个方面，一种在半导体材料的激光纹理化过程中最小化激光诱导的材料损伤的方法可以包括将短脉冲持续时间的激光辐射传送到半导体材料的目标区域，以形成具有重新组织的表面层的纹理区域，其中激光 辐射具有约200nm至约600nm的波长和约10飞秒至约400皮秒的脉冲持续时间，并且其中重组表面层下方的半导体材料的缺陷密度低至约1微米的深度较小 大于或等于约1012 / cm3。

公开(公告)号：US20150372040A1

公开(公告)日：2015-12-24

申请号：US14747875

申请日：2015-06-23

申请人： SiOnyx, Inc.

发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

摘要翻译： 提供了光捕获像素，并入这些像素的装置以及各种相关的方法。 在一个方面，例如，光捕获像素装置可以包括具有光入射表面的光敏像素，与光入射表面相对的背面，以及设置在像素的至少一部分中的外围侧壁，至少延伸 基本上围绕像素周边。 像素还可以包括基本上覆盖背面的背面光捕获材料和基本覆盖周边侧壁的外围光捕获材料。 因此，与背面的光捕获材料或周围的光捕获材料接触的光被反射回到像素。

公开(公告)号：US20130187250A1

公开(公告)日：2013-07-25

申请号：US13692628

申请日：2012-12-03

申请人： SiOnyx, Inc.

发明人： James E. Carey ,  Jason Sickler

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  H01L31/0236 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.

摘要翻译： 提供了感光半导体器件和相关方法。 在一个方面，例如，光敏半导体器件可以包括具有小于或等于约200μm厚度的电磁辐射吸收层，其中电磁辐射吸收层包括半导体材料和增强的吸收区域。 电磁辐射吸收层可操作以吸收具有大于或等于约1064nm的至少一个波长的入射电磁辐射的大于或等于约40％。

公开(公告)号：US09905599B2

公开(公告)日：2018-02-27

申请号：US14747875

申请日：2015-06-23

申请人： SiOnyx, Inc.

发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

公开(公告)号：US09064764B2

公开(公告)日：2015-06-23

申请号：US13841120

申请日：2013-03-15

申请人： SiOnyx, Inc.

发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

摘要翻译： 提供了光捕获像素，并入这些像素的装置以及各种相关的方法。 在一个方面，例如，光捕获像素装置可以包括具有光入射表面的光敏像素，与光入射表面相对的背面，以及设置在像素的至少一部分中的外围侧壁，至少延伸 基本上围绕像素周边。 像素还可以包括基本上覆盖背面的背面光捕获材料和基本覆盖周边侧壁的外围光捕获材料。 因此，与背面的光捕获材料或周围的光捕获材料接触的光被反射回到像素。