-
公开(公告)号：US20120231326A1
公开(公告)日：2012-09-13
申请号：US13504521
申请日：2010-10-28
IPC分类号： H01M4/583 , H01M10/04 , H01M2/14 , C25F3/14 , H01M4/38 , H01M2/02 , B82Y40/00 , B82Y30/00 , B82Y99/00
CPC分类号： H01M4/663 , C23C14/0605 , C23C14/16 , C25F3/12 , H01M4/134 , H01M4/366 , H01M4/386 , H01M4/66 , H01M4/661 , H01M10/0525
摘要： Methods of fabricating porous silicon by electrochemical etching and subsequent coating with a passivating agent process are provided. The coated porous silicon can be used to make anodes and batteries. It is capable of alloying with large amounts of lithium ions, has a capacity of at least 1000 mAh/g and retains this ability through at least 60 charge/discharge cycles. A particular pSi formulation provides very high capacity (3000 mAh/g) for at least 60 cycles, which is 80% of theoretical value of silicon. The Coulombic efficiency after the third cycle is between 95-99%. The very best capacity exceeds 3400 mAh/g and the very best cycle life exceeds 240 cycles, and the capacity and cycle life can be varied as needed for the application.
摘要翻译： 提供了通过电化学蚀刻制造多孔硅并随后用钝化剂工艺涂覆的方法。 涂覆的多孔硅可用于制造阳极和电池。 它能够与大量的锂离子合金化，具有至少1000mAh / g的容量，并通过至少60次充电/放电循环保持该能力。 特定的pSi配方提供了至少60个循环的非常高的容量（3000mAh / g），这是硅的理论值的80％。 第三个循环后的库仑效率在95-99％之间。 最好的容量超过3400mAh / g，最佳循环寿命超过240个循环，并且可以根据应用需要改变容量和循环寿命。
-
公开(公告)号：US20130045420A1
公开(公告)日：2013-02-21
申请号：US13589588
申请日：2012-08-20
CPC分类号： H01M4/1395 , C25F3/12 , C25F5/00 , H01B1/04 , H01M4/044 , H01M4/0442 , H01M4/0471 , H01M4/134 , H01M4/386 , H01M4/621 , H01M4/622 , H01M10/0525 , Y02E60/122
摘要： In some embodiments, the present invention provides novel methods of preparing porous silicon films and particles for lithium ion batteries. In some embodiments, such methods generally include: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. In some embodiments, the methods of the present invention may also include a step of associating the porous silicon film with a binding material. In some embodiments, the methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to anode materials derived from the porous silicon films and porous silicon particles.In some embodiments, the present invention provides novel methods of preparing porous silicon films and particles for lithium ion batteries. In some embodiments, such methods generally include: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. In some embodiments, the methods of the present invention may also include a step of associating the porous silicon film with a binding material. In some embodiments, the methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to anode materials derived from the porous silicon films and porous silicon particles.
摘要翻译： 在一些实施方案中，本发明提供了制备用于锂离子电池的多孔硅膜和颗粒的新方法。 在一些实施例中，这些方法通常包括：（1）通过将硅材料暴露于溶液中的恒定电流密度来蚀刻硅材料，以在衬底上产生多孔硅膜; 和（2）通过逐渐增加电流密度来分离多孔硅膜与基片。 在一些实施方案中，本发明的方法还可以包括将多孔硅膜与粘合材料缔合的步骤。 在一些实施例中，本发明的方法还可以包括分离多孔硅膜以形成多孔硅颗粒的步骤。 本发明的另外的实施方案涉及从多孔硅膜和多孔硅颗粒得到的阳极材料。 在一些实施方案中，本发明提供了制备用于锂离子电池的多孔硅膜和颗粒的新方法。 在一些实施例中，这些方法通常包括：（1）通过将硅材料暴露于溶液中的恒定电流密度来蚀刻硅材料，以在衬底上产生多孔硅膜; 和（2）通过逐渐增加电流密度来分离多孔硅膜与基片。 在一些实施方案中，本发明的方法还可以包括将多孔硅膜与粘合材料缔合的步骤。 在一些实施例中，本发明的方法还可以包括分离多孔硅膜以形成多孔硅颗粒的步骤。 本发明的另外的实施方案涉及从多孔硅膜和多孔硅颗粒得到的阳极材料。
-
3.发明申请COMBINED ELECTROCHEMICAL AND CHEMICAL ETCHING PROCESSES FOR GENERATION OF POROUS SILICON PARTICULATES 审中-公开用于生成多孔硅颗粒的组合电化学和化学蚀刻工艺公开(公告)号：US20140193711A1
公开(公告)日：2014-07-10
申请号：US14149055
申请日：2014-01-07
CPC分类号： H01M4/134 , C01B33/02 , C01P2004/61 , C01P2006/16 , C25F3/12 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/621 , H01M4/622 , H01M4/626 , H01M10/052 , H01M10/0525 , H01M2004/021 , H01M2004/027 , Y02P20/133
摘要： Embodiments of the present disclosure pertain to methods of preparing porous silicon particulates by: (a) electrochemically etching a silicon substrate, where electrochemical etching comprises exposure of the silicon substrate to an electric current density, and where electrochemical etching produces a porous silicon film over the silicon substrate; (b) separating the porous silicon film from the silicon substrate, where the separating comprises a gradual increase of the electric current density in sequential increments; (c) repeating steps (a) and (b) a plurality of times; (d) electrochemically etching the silicon substrate in accordance with step (a) to produce a porous silicon film over the silicon substrate; (e) chemically etching the porous silicon film and the silicon substrate; and (f) splitting the porous silicon film and the silicon substrate to form porous silicon particulates. Further embodiments of the present disclosure pertain to the formed porous silicon particulates and anode materials that contain them.
摘要翻译： 本公开的实施方案涉及通过以下步骤制备多孔硅微粒的方法：（a）电化学蚀刻硅衬底，其中电化学蚀刻包括将硅衬底暴露于电流密度，并且其中电化学蚀刻产生多孔硅膜 硅基板; （b）从硅衬底分离多孔硅膜，其中分离包括以连续增量逐渐增加电流密度; （c）多次重复步骤（a）和（b）; （d）根据步骤（a）电化学蚀刻硅衬底以在硅衬底上产生多孔硅膜; （e）化学蚀刻多孔硅膜和硅衬底; 和（f）分裂多孔硅膜和硅衬底以形成多孔硅微粒。 本公开的另外的实施方案涉及形成的含有它们的多孔硅微粒和阳极材料。
-
公开(公告)号：US20160344016A1
公开(公告)日：2016-11-24
申请号：US15098600
申请日：2016-04-14
IPC分类号： H01M4/1395 , H01M4/04 , C25F5/00 , H01M4/38 , H01M4/62 , C25F3/12 , H01M10/0525 , H01M4/134
CPC分类号： H01M4/1395 , C25F3/12 , C25F5/00 , H01B1/04 , H01M4/044 , H01M4/0442 , H01M4/0471 , H01M4/134 , H01M4/386 , H01M4/621 , H01M4/622 , H01M10/0525 , Y02E60/122
摘要： In some embodiments, the present invention provides methods of preparing porous silicon films and particles by: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution (e.g., hydrofluoric acid solution) to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. The methods of the present invention may also include a step of associating the porous silicon film with a binding material, such as polyacrylonitrile (PAN). The methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to methods of preparing porous silicon particles and anode materials that may be derived from the porous silicon films and porous silicon particles of the present invention.
摘要翻译： 在一些实施方案中，本发明提供了通过以下步骤制备多孔硅膜和颗粒的方法：（1）通过将硅材料暴露于溶液（例如氢氟酸溶液）中的恒定电流密度来蚀刻硅材料，以产生多孔 硅膜; 和（2）通过逐渐增加电流密度来分离多孔硅膜与基片。 本发明的方法还可以包括使多孔硅膜与诸如聚丙烯腈（PAN）的结合材料缔合的步骤。 本发明的方法还可以包括分离多孔硅膜以形成多孔硅颗粒的步骤。 本发明的另外的实施方案涉及制备可衍生自本发明的多孔硅膜和多孔硅颗粒的多孔硅颗粒和阳极材料的方法。
-
5.发明申请COMBINED ELECTROCHEMICAL AND CHEMICAL ETCHING PROCESSES FOR GENERATION OF POROUS SILICON PARTICULATES 有权用于生成多孔硅颗粒的组合电化学和化学蚀刻工艺公开(公告)号：US20160293935A1
公开(公告)日：2016-10-06
申请号：US15147567
申请日：2016-05-05
IPC分类号： H01M4/134 , H01M4/1395 , H01M4/62 , H01M10/0525
CPC分类号： H01M4/134 , C01B33/02 , C01P2004/61 , C01P2006/16 , C25F3/12 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/621 , H01M4/622 , H01M4/626 , H01M10/052 , H01M10/0525 , H01M2004/021 , H01M2004/027
摘要： Embodiments of the present disclosure pertain to methods of preparing porous silicon particulates by: (a) electrochemically etching a silicon substrate, where electrochemical etching comprises exposure of the silicon substrate to an electric current density, and where electrochemical etching produces a porous silicon film over the silicon substrate; (b) separating the porous silicon film from the silicon substrate, where the separating comprises a gradual increase of the electric current density in sequential increments; (c) repeating steps (a) and (b) a plurality of times; (d) electrochemically etching the silicon substrate in accordance with step (a) to produce a porous silicon film over the silicon substrate; (e) chemically etching the porous silicon film and the silicon substrate; and (f) splitting the porous silicon film and the silicon substrate to form porous silicon particulates. Further embodiments of the present disclosure pertain to the formed porous silicon particulates and anode materials that contain them.
摘要翻译： 本公开的实施方案涉及通过以下步骤制备多孔硅微粒的方法：（a）电化学蚀刻硅衬底，其中电化学蚀刻包括将硅衬底暴露于电流密度，并且其中电化学蚀刻产生多孔硅膜 硅基板; （b）从硅衬底分离多孔硅膜，其中分离包括以连续增量逐渐增加电流密度; （c）多次重复步骤（a）和（b）; （d）根据步骤（a）电化学蚀刻硅衬底以在硅衬底上产生多孔硅膜; （e）化学蚀刻多孔硅膜和硅衬底; 和（f）分裂多孔硅膜和硅衬底以形成多孔硅微粒。 本公开的另外的实施方案涉及形成的含有它们的多孔硅微粒和阳极材料。
-
公开(公告)号：US09340894B2
公开(公告)日：2016-05-17
申请号：US13589588
申请日：2012-08-20
CPC分类号： H01M4/1395 , C25F3/12 , C25F5/00 , H01B1/04 , H01M4/044 , H01M4/0442 , H01M4/0471 , H01M4/134 , H01M4/386 , H01M4/621 , H01M4/622 , H01M10/0525 , Y02E60/122
摘要： In some embodiments, the present invention provides novel methods of preparing porous silicon films and particles for lithium ion batteries. In some embodiments, such methods generally include: (1) etching a silicon material by exposure of the silicon material to a constant current density in a solution to produce a porous silicon film over a substrate; and (2) separating the porous silicon film from the substrate by gradually increasing the electric current density in sequential increments. In some embodiments, the methods of the present invention may also include a step of associating the porous silicon film with a binding material. In some embodiments, the methods of the present invention may also include a step of splitting the porous silicon film to form porous silicon particles. Additional embodiments of the present invention pertain to anode materials derived from the porous silicon films and porous silicon particles.
摘要翻译： 在一些实施方案中，本发明提供了制备用于锂离子电池的多孔硅膜和颗粒的新方法。 在一些实施例中，这些方法通常包括：（1）通过将硅材料暴露于溶液中的恒定电流密度来蚀刻硅材料，以在衬底上产生多孔硅膜; 和（2）通过逐渐增加电流密度来分离多孔硅膜与基片。 在一些实施方案中，本发明的方法还可以包括将多孔硅膜与粘合材料缔合的步骤。 在一些实施例中，本发明的方法还可以包括分离多孔硅膜以形成多孔硅颗粒的步骤。 本发明的另外的实施方案涉及从多孔硅膜和多孔硅颗粒得到的阳极材料。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.022 秒)
