公开(公告)号：US20250061022A1

公开(公告)日：2025-02-20

申请号：US18939475

申请日：2024-11-06

Applicant: Silicon Motion, Inc

Inventor： Tsung-Chieh Yang ,  Hong-Jung Hsu ,  Jian-Dong DU

IPC: G06F11/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.