公开(公告)号：US20140203343A1

公开(公告)日：2014-07-24

申请号：US14125029

申请日：2012-07-16

Applicant: Silicon Storage Technology, Inc.

Inventor： Chunming Wang ,  Baowei Qiao ,  Zufa Zhang ,  Yi Zhang ,  Shiuh Luen Wang ,  Wen-Juei Lu

IPC: H01L29/788 ,  H01L29/66

CPC classification number: H01L29/788 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed.

Abstract translation: 一种具有分离栅极的非易失性存储单元，其中浮动栅极和耦合/控制栅极具有互补的非平面形状。 形状可以是台阶形状。 还公开了这种电池的阵列和制造电池的方法。