公开(公告)号：US20240274591A1

公开(公告)日：2024-08-15

申请号：US18110318

申请日：2023-02-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Jinho KIM ,  CYNTHIA FUNG ,  PARVIZ GHAZAVI ,  JEAN FRANCOIS THIERY ,  CATHERINE DECOBERT ,  GILLES FESTES ,  BRUNO VILLARD ,  YURI TKACHEV ,  XIAN LIU ,  NHAN DO

IPC: H01L27/02 ,  H01L21/38 ,  H01L23/58

CPC classification number: H01L27/0207 ,  H01L21/38 ,  H01L23/585

Abstract: A semiconductor device includes a semiconductor substrate, a first module of circuitry formed on the semiconductor substrate, a second module of circuitry formed on the semiconductor substrate, and a communication ring that encircles the first module of circuitry. The communication ring includes an insulation material disposed over the semiconductor substrate, a plurality of electrical connectors disposed over the semiconductor substrate and extending across a width of the communication ring, and a conductive diffusion in the semiconductor substrate that encircles the first module of circuitry.