公开(公告)号：US20230101585A1

公开(公告)日：2023-03-30

申请号：US17576754

申请日：2022-01-14

Applicant: Silicon Storage Technology, Inc.

Inventor： Yuri Tkachev ,  JINHO KIM ,  CYNTHIA FUNG ,  GILLES FESTES ,  BERNARD BERTELLO ,  PARVIZ GHAZAVI ,  BRUNO VILLARD ,  JEAN FRANCOIS THIERY ,  CATHERINE DECOBERT ,  SERGUEI JOURBA ,  FAN LUO ,  LATT TEE ,  NHAN DO

IPC: G11C29/50

Abstract: A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.

公开(公告)号：US20240274591A1

公开(公告)日：2024-08-15

申请号：US18110318

申请日：2023-02-15

Applicant: Silicon Storage Technology, Inc.

Inventor： Jinho KIM ,  CYNTHIA FUNG ,  PARVIZ GHAZAVI ,  JEAN FRANCOIS THIERY ,  CATHERINE DECOBERT ,  GILLES FESTES ,  BRUNO VILLARD ,  YURI TKACHEV ,  XIAN LIU ,  NHAN DO

IPC: H01L27/02 ,  H01L21/38 ,  H01L23/58

CPC classification number: H01L27/0207 ,  H01L21/38 ,  H01L23/585

Abstract: A semiconductor device includes a semiconductor substrate, a first module of circuitry formed on the semiconductor substrate, a second module of circuitry formed on the semiconductor substrate, and a communication ring that encircles the first module of circuitry. The communication ring includes an insulation material disposed over the semiconductor substrate, a plurality of electrical connectors disposed over the semiconductor substrate and extending across a width of the communication ring, and a conductive diffusion in the semiconductor substrate that encircles the first module of circuitry.

公开(公告)号：US20170103991A1

公开(公告)日：2017-04-13

申请号：US15264457

申请日：2016-09-13

Applicant: Silicon Storage Technology, Inc.

Inventor： JINHO KIM ,  CHIEN-SHENG SU ,  FENG ZHOU ,  XIAN LIU ,  NHAN DO ,  PRATEEP TUNTASOOD ,  PARVIZ GHAZAVI

IPC: H01L27/115

CPC classification number: H01L27/11531 ,  H01L27/11524 ,  H01L27/11536 ,  H01L27/11539 ,  H01L27/11541 ,  H01L27/11543

Abstract: A method of forming a memory device on a substrate having memory, core and HV device areas. The method includes forming a pair of conductive layers in all three areas, forming an insulation layer over the conductive layers in all three areas (to protect the core and HV device areas), and then etching through the insulation layer and the pair of conductive layers in the memory area to form memory stacks. The method further includes forming an insulation layer over the memory stacks (to protect the memory area), removing the pair of conductive layers in the core and HV device areas, and forming conductive gates disposed over and insulated from the substrate in the core and HV device areas.