公开(公告)号：US20230101585A1

公开(公告)日：2023-03-30

申请号：US17576754

申请日：2022-01-14

Applicant: Silicon Storage Technology, Inc.

Inventor： Yuri Tkachev ,  JINHO KIM ,  CYNTHIA FUNG ,  GILLES FESTES ,  BERNARD BERTELLO ,  PARVIZ GHAZAVI ,  BRUNO VILLARD ,  JEAN FRANCOIS THIERY ,  CATHERINE DECOBERT ,  SERGUEI JOURBA ,  FAN LUO ,  LATT TEE ,  NHAN DO

IPC: G11C29/50

Abstract: A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RC1 for the memory cells and a first number N1 of the memory cells having the lowest read current RC1. A second read operation is performed to determine a second number N2 of the memory cells having a read current not exceeding a target read current RC2. The target read current RC2 is equal to the lowest read current RC1 plus a predetermined current value. The die is determined to be acceptable if the second number N2 is determined to exceed the first number N1 plus a predetermined number. The die is determined to be defective if the second number N2 is determined not to exceed the first number N1 plus the predetermined number.