公开(公告)号：US20040192015A1

公开(公告)日：2004-09-30

申请号：US10809070

申请日：2004-03-25

Applicant: Siltronic AG

Inventor： Wilfried Von Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

IPC: H01L021/30 ,  H01L021/46 ,  C30B001/00 ,  H01L021/20 ,  H01L021/36

CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1068

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cmnull3 to 7.2*1017 cmnull3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract translation: 通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到 通过针对生长前沿的热通量的增长前沿。 该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm -3的硅单晶，硼或磷的径向浓度变化小于5％ ，其没有凝聚的自点缺陷。 半导体晶片与单晶分离。 这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。