ENVELOPE CONTROLLED RADIO FREQUENCY SWITCHES

    公开(公告)号:US20230082437A1

    公开(公告)日:2023-03-16

    申请号:US17814671

    申请日:2022-07-25

    IPC分类号: H04B1/00 H04B1/04 H04B1/10

    摘要: Apparatus and methods for envelope controlled radio frequency (RF) switches are provided. In certain embodiments, a power amplifier provides an RF signal to an antenna by way of an RF switch. Additionally, the envelope signal is used not only to control a power amplifier supply voltage of the power amplifier, but also to control a regulated voltage used to turn on the RF switch. For example, a level shifter can use a regulated voltage from charge pump circuitry to turn on the RF switch, and the envelope signal can be provided to the charge pump circuitry and used to control the voltage level of the regulated voltage over time.

    Control circuitry for silicon-on-insulator chip

    公开(公告)号:US11190182B2

    公开(公告)日:2021-11-30

    申请号:US15895890

    申请日:2018-02-13

    摘要: Disclosed herein are non-limiting examples of charge pumps that reduce the introduction of noise into a circuit in which they are implemented and/or lower the output impedance when providing certain voltages (e.g., negative voltage generators). The disclosed technologies utilize a plurality of smaller charge pumps (or charge pump units) working in parallel that operate on different clock phases rather than using a single charge pump with a relatively large flying capacitor or a plurality of charge pumps in series. This can, for example, reduce spurious signals or spurs that arise due at least in part to the characteristics of the clock signal. The disclosed technologies may be particularly advantageous for SOI-based components and circuits.

    Apparatus and methods for biasing of power amplifiers

    公开(公告)号:US10566943B2

    公开(公告)日:2020-02-18

    申请号:US15906219

    申请日:2018-02-27

    摘要: Apparatus and methods for biasing of power amplifiers are disclosed. In one embodiment, a mobile device includes a transceiver that generates a radio frequency signal and a power amplifier enable signal, a power amplifier that provides amplification to the radio frequency signal and that is biased by a bias signal, and a bias circuit that receives the power amplifier enable signal and generates the bias signal. The bias circuit includes a gain correction circuit that generates a correction current in response to activation of the power amplifier enable signal, and a primary biasing circuit that generates the bias signal based on the correction current and the power amplifier enable signal.

    Switch linearization by compensation of a field-effect transistor

    公开(公告)号:US10361697B2

    公开(公告)日:2019-07-23

    申请号:US15851810

    申请日:2017-12-22

    摘要: Disclosed herein are systems and methods for reducing intermodulation distortion (IMD) in switches using parallel distorter circuits. A switch circuit can include having a switch arm and a distorter arm that is configured to act as a compensation circuit to compensate for non-linearities in the switch arm. The switch circuit can include a plurality of FETs in the switch arm configured to provide switching functionality. The distorter arm is configured to compensate for a non-linearity effect generated by the FETs of the switch arm when it is in an ON state. The distorter arm is configured to compensate for the non-linearity effect generated by the switch arm independent of the frequency of the signal received by the switch arm. Various configurations of switch arms and distorter arms can be implemented to reduce harmonic distortion as well as intermodulation distortion.