公开(公告)号：US20200064206A1

公开(公告)日：2020-02-27

申请号：US16674928

申请日：2019-11-05

Applicant: Socionext Inc.

Inventor： Hiroyuki HAMANO ,  Takashi MIYAZAKI

IPC: G01K7/01 ,  G01K3/00

Abstract: A temperature measuring device includes first and second semiconductor elements each of which has a p-n junction, a transistor group including a plurality of transistors of which respective sources are connected to a power source and of which respective gates are connected to each other, the plurality of transistors constituting a current source, the transistor group being configured to output a first current and a second current having a different magnitude from the first current to the first and second semiconductor elements, respectively, and a selector configured to select at least one first transistor and a plurality of second transistors different from the first transistor, from among the plurality of transistors.