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1.发明申请公开(公告)号：US20220140190A1
公开(公告)日：2022-05-05
申请号：US17435014
申请日：2020-02-25
Applicant: Soitec
Inventor： David Sotta , Mariia Rozhavskaia , Benjamin Daminlano
Abstract: An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.
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