公开(公告)号：US20240030883A1

公开(公告)日：2024-01-25

申请号：US17907247

申请日：2021-03-24

Applicant: Soitec

Inventor： Arnaud Castex ,  Laurence Doutre-Roussel ,  Eric Butaud ,  Brice Tavel

IPC: H03H3/08 ,  H10N30/073 ,  H10N30/082 ,  H10N30/086

CPC classification number: H03H3/08 ,  H10N30/073 ,  H10N30/082 ,  H10N30/086

Abstract: A method of manufacturing a piezoelectric structure comprises providing a substrate of piezoelectric material, providing a carrier substrate, depositing a dielectric bonding layer at a temperature lower than or equal to 300° C. on a single side of the substrate of piezoelectric material, a step of joining the substrate of piezoelectric material to the carrier substrate via the dielectric bonding layer, a thinning step for forming the piezoelectric structure, which comprises a layer of piezoelectric material joined to a carrier substrate.

公开(公告)号：US20230291377A1

公开(公告)日：2023-09-14

申请号：US17907245

申请日：2021-03-24

Applicant: Soitec

Inventor： Djamel Belhachemi ,  Thierry Barge ,  Oleg Kononchuk ,  Brice Tavel

IPC: H03H3/08 ,  H03H9/02

CPC classification number: H03H3/08 ,  H03H9/02559

Abstract: A process for manufacturing a piezoelectric structure for a radiofrequency device comprises providing a substrate of piezoelectric material, providing a carrier substrate, providing a dielectric bonding layer on the substrate of piezoelectric material, a step of joining the substrate of piezoelectric material to the carrier substrate via the dielectric bonding layer, and a thinning step for forming the piezoelectric structure, which comprises a layer of piezoelectric material joined to a carrier substrate via the dielectric bonding layer.