公开(公告)号：US12207557B2

公开(公告)日：2025-01-21

申请号：US17865052

申请日：2022-07-14

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiyori Sakata ,  Ryuta Nishizawa ,  Shigeru Shiraishi ,  Keiichi Yamaguchi ,  Takuro Kobayashi

IPC: H10N30/082

Abstract: A method for manufacturing a vibrator device includes a first dry etching step of dry-etching a quartz crystal substrate having a first surface and a second surface from the side facing the first surface to form first grooves and part of the outer shapes of a first vibrating arm and a second vibrating arm, a second dry etching step of dry-etching the quartz crystal substrate from the side facing the second surface to form second grooves and part of the outer shapes of the first vibrating arm and the second vibrating arm, and thereafter, a wet etching step of wet-etching the side surfaces of the first vibrating arm and the second vibrating arm.

公开(公告)号：US12040774B2

公开(公告)日：2024-07-16

申请号：US17215901

申请日：2021-03-29

Applicant: RF360 Singapore PTE. LTD.

Inventor： Philipp Geselbracht ,  Johannes Koerber ,  Manuel Sabbagh ,  Peter Schmidt

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H04B1/40 ,  H10N30/082

CPC classification number: H03H9/02622 ,  H03H3/08 ,  H03H9/02834 ,  H03H9/02866 ,  H03H9/145 ,  H03H9/25 ,  H03H9/6489 ,  H04B1/40 ,  H10N30/082

Abstract: An apparatus is disclosed for site-selective piezoelectric-layer trimming. The apparatus includes at least one surface-acoustic-wave filter with an electrode structure and a piezoelectric layer. The electrode structure has multiple gaps. The piezoelectric layer has a planar surface defined by a first (X) axis and a second (Y) axis that is perpendicular to the first (X) axis. The piezoelectric layer is configured to propagate an acoustic wave along the first (X) axis. The piezoelectric layer includes a first portion that supports the electrode structure and a second portion that is exposed by the multiple gaps of the electrode structure. The second portion has different heights across the second (Y) axis. The different heights are defined with respect to a third (Z) axis that is substantially normal to the planar surface.

公开(公告)号：US20240146275A1

公开(公告)日：2024-05-02

申请号：US18404685

申请日：2024-01-04

Applicant: Soitec

Inventor： Djamel Belhachemi ,  Thierry Barge

IPC: H03H3/10 ,  C09J7/30 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H10N30/073 ,  H10N30/08 ,  H10N30/082 ,  H10N30/086

CPC classification number: H03H3/10 ,  C09J7/30 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02897 ,  H03H9/25 ,  H03H9/6489 ,  H10N30/073 ,  H10N30/08 ,  H10N30/082 ,  H10N30/086

Abstract: A process for fabricating a substrate for a radiofrequency device includes providing a piezoelectric substrate and a carrier substrate, depositing a dielectric layer on a surface of the piezoelectric substrate, assembling together the piezoelectric substrate and the carrier substrate with a polymerizable adhesive directly between the dielectric layer and the carrier substrate to form an assembled substrate, and polymerizing the polymerizable adhesive layer to form a polymerized layer bonding the piezoelectric substrate to the carrier substrate, the polymerized layer and the dielectric layer together forming an electrically insulating layer between the piezoelectric substrate and the carrier substrate,

公开(公告)号：US11963452B2

公开(公告)日：2024-04-16

申请号：US17103894

申请日：2020-11-24

Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

Inventor： Jia Jie Xia ,  Rakesh Kumar ,  Minu Prabhachandran Nair ,  Nagarajan Ranganathan

IPC: H10N30/30 ,  B81B3/00 ,  H04R17/02 ,  H10N30/00 ,  H10N30/06 ,  H10N30/082 ,  H10N30/87 ,  H10N30/88 ,  H04R31/00

CPC classification number: H10N30/302 ,  B81B3/001 ,  H04R17/02 ,  H10N30/06 ,  H10N30/082 ,  H10N30/1051 ,  H10N30/308 ,  H10N30/877 ,  H10N30/883 ,  B81B2201/0257 ,  H04R31/00 ,  H04R2201/003 ,  Y10T29/42

Abstract: A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.

公开(公告)号：US11963450B2

公开(公告)日：2024-04-16

申请号：US18448861

申请日：2023-08-11

Applicant: Guangdong University of Technology

Inventor： Yun Chen ,  Pengfei Yu ,  Aoke Song ,  Zijian Li ,  Maoxiang Hou ,  Xin Chen

IPC: H10N30/082 ,  B82Y40/00 ,  H10N30/081 ,  B82Y10/00 ,  H10N30/30

CPC classification number: H10N30/082 ,  H10N30/081 ,  B82Y10/00 ,  B82Y40/00 ,  H10N30/30 ,  Y10T29/42

Abstract: A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.

公开(公告)号：US11905168B2

公开(公告)日：2024-02-20

申请号：US17072863

申请日：2020-10-16

Applicant: Microjet Technology Co., Ltd.

Inventor： Hao-Jan Mou ,  Hsien-Chung Tai ,  Lin-Huei Fang ,  Yung-Lung Han ,  Chi-Feng Huang ,  Chang-Yen Tsai ,  Wei-Ming Lee

IPC: B81C1/00 ,  F04B43/04 ,  H10N30/067 ,  H10N30/081 ,  H10N30/082 ,  F16K99/00

CPC classification number: B81C1/00182 ,  B81C1/00119 ,  B81C1/00166 ,  F04B43/046 ,  H10N30/067 ,  H10N30/081 ,  H10N30/082 ,  B81C2201/013 ,  B81C2201/0156 ,  F16K99/0048 ,  F16K2099/0074 ,  F16K2099/0094

Abstract: A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

公开(公告)号：US11882767B2

公开(公告)日：2024-01-23

申请号：US16976142

申请日：2019-02-27

Applicant: Novosound Ltd.

Inventor： David Hughes ,  Desmond Gibson ,  Daniel Irving

IPC: H10N30/074 ,  H10N30/082 ,  H10N30/87 ,  H10N30/853 ,  H10N30/00

CPC classification number: H10N30/074 ,  H10N30/082 ,  H10N30/10513 ,  H10N30/853 ,  H10N30/87

Abstract: A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material. In further examples, the substrate is provided on a rotating drum whilst tire layer of piezoelectric material is being deposited.

公开(公告)号：US11800804B2

公开(公告)日：2023-10-24

申请号：US17896794

申请日：2022-08-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Bernhard Boser ,  David Horsley ,  Richard Przybyla ,  Ofer Rozen ,  Stefon Shelton

IPC: H01L21/34 ,  H10N30/085 ,  B06B1/06 ,  G10K9/122 ,  G10K13/00 ,  H10N30/50 ,  H10N30/082 ,  H10N30/30 ,  H10N30/853 ,  H10N30/20 ,  G10K9/12

CPC classification number: H10N30/085 ,  B06B1/0622 ,  B06B1/0666 ,  G10K9/121 ,  G10K9/122 ,  G10K13/00 ,  H10N30/082 ,  H10N30/2047 ,  H10N30/308 ,  H10N30/50 ,  H10N30/853

Abstract: A diaphragm for a piezoelectric micromachined ultrasonic transducer (PMUT) is presented having resonance frequency and bandwidth characteristics which are decoupled from one another into independent variables. Portions of at least the piezoelectric material layer and backside electrode layer are removed in a selected pattern to form structures, such as ribs, in the diaphragm which retains stiffness while reducing overall mass. The patterned structure can be formed by additive, or subtractive, fabrication processes.

公开(公告)号：US20230264474A1

公开(公告)日：2023-08-24

申请号：US18003713

申请日：2021-07-06

Applicant: ROHM CO., LTD.

Inventor： Eitaro KUROKAWA ,  Osamu MATSUSHIMA ,  Noriyuki SHIMOJI ,  Tatsuya SUZUKI ,  Daisuke NOTSU

IPC: B41J2/14 ,  H10N30/20 ,  H10N30/87 ,  H10N30/88 ,  H10N30/082 ,  B41J2/16

CPC classification number: B41J2/14233 ,  H10N30/2047 ,  H10N30/87 ,  H10N30/88 ,  H10N30/082 ,  B41J2/1607 ,  B41J2/164

Abstract: An inkjet printing head includes a piezoelectric element that includes a lower electrode disposed on a movable film, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, a hydrogen barrier film that covers, in a front surface of the piezoelectric element, at least, entireties of side surfaces of the upper electrode, the piezoelectric film, and the lower electrode, at least a part of an upper surface of the upper electrode, and an upper surface of the lower electrode, a first interlayer insulating film formed on a front surface other than an end surface of the hydrogen barrier film, a second interlayer insulating film formed so as to cover the end surface of the hydrogen barrier film and the first interlayer insulating film, and a wiring that is formed on the second interlayer insulating film and that is connected to the piezoelectric element.

公开(公告)号：US11696505B2

公开(公告)日：2023-07-04

申请号：US16781543

申请日：2020-02-04

Applicant: Korea Polytechnic University Industry Academic Cooperation Foundation

Inventor： Kyoung Kook Kim

IPC: H01L41/29 ,  H01L41/113 ,  H01L41/317 ,  H01L41/332 ,  H01L41/047 ,  G06K9/00 ,  H10N30/06 ,  G06V40/13 ,  H10N30/077 ,  H10N30/082 ,  H10N30/30 ,  H10N30/87 ,  H10N30/853

CPC classification number: H10N30/06 ,  G06V40/1306 ,  H10N30/077 ,  H10N30/082 ,  H10N30/302 ,  H10N30/878 ,  H10N30/8554

Abstract: The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.