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公开(公告)号:US20190013430A1
公开(公告)日:2019-01-10
申请号:US16132059
申请日:2018-09-14
发明人: Rebecca Elizabeth JONES-ALBERTUS , Pranob MISRA , Michael J. SHELDON , Homan B. YUEN , Ting LIU , Daniel DERKACS , Vijit SABNIS , Michael West WIEMER , Ferran SUAREZ
IPC分类号: H01L31/0735 , H01L31/0687 , H01L31/0304 , H01L31/0725 , H01L31/065 , H01L31/18
摘要: Compound semiconductor alloys comprising dilute nitride materials, are materials used in absorbing layers for photodetectors, power converters, solar cells, and in particular to high efficiency, electronic and optoelectronic devices, including multijunction solar cells, photodetectors, power converters, and the like, formed primarily of III-V semiconductor alloys. The absorbing (or active) layers achieve improved characteristics including band gap optimization and minimization of defects.