公开(公告)号：US10811562B2

公开(公告)日：2020-10-20

申请号：US15544101

申请日：2015-10-22

Applicant: SONY CORPORATION

Inventor： Hidekazu Aoyagi ,  Takahiro Arakida ,  Takahiko Kawasaki ,  Katsutoshi Itou ,  Makoto Nakashima

IPC: H01L33/42 ,  H01L33/24 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/44

Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.

公开(公告)号：US20130181249A1

公开(公告)日：2013-07-18

申请号：US13743275

申请日：2013-01-16

Applicant: SONY CORPORATION

Inventor： Hidekazu Aoyagi ,  Takahiko Kawasaki ,  Michinori Shiomi ,  Katsutoshi Itou ,  Makoto Nakashima

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L33/385 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Abstract translation: 发光器件包括：依次包括第一导电类型半导体层，发光层和第二导电类型半导体层的层叠体; 至少在所述第二导电类型半导体层的周缘处与所述第二导电型半导体层接触地设置的接触层; 电连接到第一导电类型半导体层的第一电极; 设置成比第二导电型半导体层更靠近第一导电型半导体层的第二电极; 以及将第二电极和接触层彼此电连接的导体。

公开(公告)号：US08987763B2

公开(公告)日：2015-03-24

申请号：US13743275

申请日：2013-01-16

Applicant: Sony Corporation

Inventor： Hidekazu Aoyagi ,  Takahiko Kawasaki ,  Michinori Shiomi ,  Katsutoshi Itou ,  Makoto Nakashima

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/385 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Abstract translation: 发光器件包括：依次包括第一导电类型半导体层，发光层和第二导电类型半导体层的层叠体; 至少在所述第二导电类型半导体层的周缘处与所述第二导电型半导体层接触地设置的接触层; 电连接到第一导电类型半导体层的第一电极; 设置成比第二导电型半导体层更靠近第一导电型半导体层的第二电极; 以及将第二电极和接触层彼此电连接的导体。