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    Light emitting diode
    2.
    发明授权
    Light emitting diode 有权

    公开(公告)号：US10811562B2

    公开(公告)日：2020-10-20

    申请号：US15544101

    申请日：2015-10-22

    Applicant: SONY CORPORATION

    Inventor： Hidekazu Aoyagi ,  Takahiro Arakida ,  Takahiko Kawasaki ,  Katsutoshi Itou ,  Makoto Nakashima

    IPC: H01L33/42 ,  H01L33/24 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/44

    Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.

    LASER DIODE ARRAY, METHOD OF MANUFACTURING THE SAME, PRINTER, AND OPTICAL COMMUNICATION DEVICE
    3.
    发明申请
    LASER DIODE ARRAY, METHOD OF MANUFACTURING THE SAME, PRINTER, AND OPTICAL COMMUNICATION DEVICE 审中-公开
    激光二极管阵列，其制造方法，打印机和光通信设备

    公开(公告)号：US20160308333A1

    公开(公告)日：2016-10-20

    申请号：US15186932

    申请日：2016-06-20

    Applicant: Sony Corporation

    Inventor： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC: H01S5/42 ,  H01S5/042 ,  H01S5/02 ,  H01S5/343 ,  H01S5/187 ,  H01S5/183

    CPC classification number: H01S5/423 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/1838 ,  H01S5/187 ,  H01S5/34313 ,  H01S2304/04 ,  Y10S438/977

    Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

    Abstract translation: 提供一种制造能够抑制串扰的激光二极管阵列的方法。 制造激光二极管阵列的方法包括以下步骤：通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层，然后选择性地蚀刻剥离层和垂直 谐振器结构，从而处理成柱状，从侧面氧化剥离层的剥离步骤，然后从第一基板剥离柱状的垂直共振器结构，以及重新连接步骤，连接多个 将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

    Vertical cavity surface emitting laser
    4.
    再颁专利
    Vertical cavity surface emitting laser 有权

    公开(公告)号：USRE48577E1

    公开(公告)日：2021-06-01

    申请号：US15895384

    申请日：2018-02-13

    Applicant: Sony Corporation

    Inventor： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/042

    Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210098971A1

    公开(公告)日：2021-04-01

    申请号：US17067451

    申请日：2020-10-09

    Applicant: Sony Corporation

    Inventor： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC: H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/223 ,  H01S5/187 ,  H01S5/022 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/18 ,  H01S5/125

    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光元件及其制造方法

    公开(公告)号：US20170012409A1

    公开(公告)日：2017-01-12

    申请号：US15272181

    申请日：2016-09-21

    Applicant: Sony Corporation

    Inventor： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC: H01S5/183 ,  H01S5/343 ,  H01S5/187 ,  H01S5/042

    CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    Abstract translation: 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190074662A1

    公开(公告)日：2019-03-07

    申请号：US16173226

    申请日：2018-10-29

    Applicant: Sony Corporation

    Inventor： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC: H01S5/183 ,  H01S5/223 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/022 ,  H01S5/187 ,  H01S5/343 ,  H01S5/18 ,  H01S5/125 ,  H01S5/042

    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

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