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公开(公告)号：US10720471B2
公开(公告)日：2020-07-21
申请号：US15765316
申请日：2016-08-16
Applicant: SONY CORPORATION
Inventor： Michinori Shiomi , Syuuiti Takizawa , Takeru Bessho , Hideki Ono , Yosuke Saito , Yoshiaki Obana , Daisuke Hobara
IPC: H01L27/30 , H01L27/146 , H01L51/44
Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.
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2.发明授权公开(公告)号：US08987763B2
公开(公告)日：2015-03-24
申请号：US13743275
申请日：2013-01-16
Applicant: Sony Corporation
Inventor： Hidekazu Aoyagi , Takahiko Kawasaki , Michinori Shiomi , Katsutoshi Itou , Makoto Nakashima
CPC classification number: H01L33/62 , H01L33/385 , H01L33/44 , H01L2224/48091 , H01L2924/00014
Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.
Abstract translation: 发光器件包括：依次包括第一导电类型半导体层，发光层和第二导电类型半导体层的层叠体; 至少在所述第二导电类型半导体层的周缘处与所述第二导电型半导体层接触地设置的接触层; 电连接到第一导电类型半导体层的第一电极; 设置成比第二导电型半导体层更靠近第一导电型半导体层的第二电极; 以及将第二电极和接触层彼此电连接的导体。
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公开(公告)号：US10361241B2
公开(公告)日：2019-07-23
申请号：US14568434
申请日：2014-12-12
Applicant: Sony Corporation
Inventor： Takeru Bessho , Daisuke Hobara , Michinori Shiomi
IPC: H01B1/08 , H01L27/146 , H01L51/42 , H01L27/30 , H01L51/00
Abstract: A dispersion material includes: a plurality of semiconductor nanoparticles; and an adsorption molecule configured to selectively absorb light having a predetermined wavelength and adsorbed to each of the plurality of semiconductor nanoparticles, the adsorption molecule having a plane aligned to be non-parallel to a direction from a center portion of each of the plurality of semiconductor nanoparticles toward an adsorption portion of each of the plurality of semiconductor nanoparticles.
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公开(公告)号：US10014422B2
公开(公告)日：2018-07-03
申请号：US15038216
申请日：2014-12-17
Applicant: SONY CORPORATION
Inventor： Michinori Shiomi , Takeru Bessho
IPC: H01L27/146 , H01L31/0296 , H01L21/02
CPC classification number: H01L31/02963 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L21/02628
Abstract: A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.
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5.发明申请公开(公告)号：US20130181249A1
公开(公告)日：2013-07-18
申请号：US13743275
申请日：2013-01-16
Applicant: SONY CORPORATION
Inventor： Hidekazu Aoyagi , Takahiko Kawasaki , Michinori Shiomi , Katsutoshi Itou , Makoto Nakashima
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L33/385 , H01L33/44 , H01L2224/48091 , H01L2924/00014
Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.
Abstract translation: 发光器件包括：依次包括第一导电类型半导体层，发光层和第二导电类型半导体层的层叠体; 至少在所述第二导电类型半导体层的周缘处与所述第二导电型半导体层接触地设置的接触层; 电连接到第一导电类型半导体层的第一电极; 设置成比第二导电型半导体层更靠近第一导电型半导体层的第二电极; 以及将第二电极和接触层彼此电连接的导体。
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Patent Agency Ranking
公开(公告)号：US11758743B2
公开(公告)日：2023-09-12
申请号：US16317371
申请日：2017-06-06
Applicant: SONY CORPORATION
Inventor： Syuuiti Takizawa , Michinori Shiomi
CPC classification number: H10K30/35 , B82Y10/00 , B82Y15/00 , B82Y40/00 , H10K19/20 , H10K39/32 , B82Y30/00
Abstract: To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency.
The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles.
(In the general formula (1), X represents —SH, —COOH, —NH2, —PO(OH)2, or —SO2(OH), A1 represents —S, —COO, —PO(OH)O, or —SO2(O), and n is an integer of 1 to 3. B1 represents Li, Na, or K.)-
公开(公告)号：US11581370B2
公开(公告)日：2023-02-14
申请号：US16964010
申请日：2019-01-17
Applicant: SONY CORPORATION
Inventor： Masashi Bando , Michinori Shiomi
IPC: H01L27/146 , H01L27/30 , H01L51/42 , H01L51/44
Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.
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8.发明授权公开(公告)号：US09455373B2
公开(公告)日：2016-09-27
申请号：US13655881
申请日：2012-10-19
Applicant: Sony Corporation
Inventor： Mikihiro Yokozeki , Takahiro Koyama , Hironobu Narui , Hidekazu Aoyagi , Michinori Shiomi , Takahiko Kawasaki , Katsutoshi Itou
Abstract: A light emitting element includes: a laminated body including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided in vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.
Abstract translation: 发光元件包括：依次包括第一导电半导体层，有源层和第二导电半导体层的层叠体，所述第二导电半导体层具有光提取面; 以及在活性层的端面附近设置的复合抑制结构，所述复合抑制结构具有比有源层的带隙大的带隙。
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公开(公告)号：US10580913B2
公开(公告)日：2020-03-03
申请号：US16023515
申请日：2018-06-29
Applicant: SONY CORPORATION
Inventor： Michinori Shiomi , Takeru Bessho
IPC: H01L27/146 , H01L31/0296 , H01L21/02
Abstract: A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal to or larger than an exciton Bohr radius; and a solvent dispersed with the plurality of semiconductor nanoparticles.
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公开(公告)号：US09911894B2
公开(公告)日：2018-03-06
申请号：US14689892
申请日：2015-04-17
Applicant: Sony Corporation
Inventor： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC: H01L33/00 , H01L31/0328 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/08 , H01L27/15 , H01L33/24 , H01L33/32 , H01L33/12 , H01L33/22 , H01L33/46
CPC classification number: H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
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