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    PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS
    1.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS 有权
    光电转换装置，固态摄像单元和电子装置

    公开(公告)号：US20150311445A1

    公开(公告)日：2015-10-29

    申请号：US14439416

    申请日：2013-10-31

    Applicant: SONY CORPORATION

    Inventor： Toru UDAKA ,  Masaki MURATA ,  Osamu ENOKI ,  Masayoshi AONUMA ,  Sae MIYAJI ,  Takuya ITO ,  Miki SUDOU ,  Rui MORIMOTO ,  Hiroto SASAKI

    IPC: H01L51/00

    CPC classification number: H01L51/0046 ,  H01L27/307 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4246 ,  H01L51/4253 ,  Y02E10/549

    Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.

    Abstract translation: 本发明的固态图像拾取单元包括多个像素，每个像素包括光电转换元件。 光电转换元件包括光电转换层; 以及在其间设置有光电转换层的第一和第二电极，所述光电转换层包括第一导电类型的第一有机半导体和第二导电类型的第二有机半导体，并且通过添加第三有机半导体 的第一和第二有机半导体中的一种的衍生物或异构体。

    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING APPARATUS
    3.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING APPARATUS 审中-公开

    公开(公告)号：US20200295088A1

    公开(公告)日：2020-09-17

    申请号：US16648981

    申请日：2018-09-07

    Applicant: Sony Corporation ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Yu KATO ,  Yuta INABA ,  Masato KANNO ,  Hideaki MOGI ,  Miki KIMIJIMA ,  Sae MIYAJI

    IPC: H01L27/30 ,  H01L51/00

    Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

    HOLE TRANSPORTING MATERIAL FOR HELIOS
    4.
    发明申请
    HOLE TRANSPORTING MATERIAL FOR HELIOS 有权

    公开(公告)号：US20230134972A1

    公开(公告)日：2023-05-04

    申请号：US18085101

    申请日：2022-12-20

    Applicant: Sony Corporation ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Yu KATO ,  Yuta INABA ,  Masato KANNO ,  Hideaki MOGI ,  Miki KIMIJIMA ,  Sae MIYAJI

    IPC: H10K39/32 ,  H10K85/20 ,  H10K85/60 ,  H10K85/30

    Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.
    [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

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