Method of fabricating a thin film transistor using joule heat from the gate electrode to form a crystallized channel region
    3.
    发明授权
    Method of fabricating a thin film transistor using joule heat from the gate electrode to form a crystallized channel region 有权
    使用来自栅电极的焦耳热制造薄膜晶体管以形成晶化沟道区的方法

    公开(公告)号:US08053297B2

    公开(公告)日:2011-11-08

    申请号:US12906830

    申请日:2010-10-18

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L21/00 H01L21/84

    摘要: A thin film transistor (TFT) having improved characteristics, a method for fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT is constructed with a substrate, a semiconductor layer disposed on the substrate and including a channel region, source and drain regions, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer and corresponding to the channel region, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer. The channel region is made from polycrystalline silicon (poly-Si), and the source and drain regions are made from amorphous silicon (a-Si). The polycrystalline silicon of the channel region is formed by crystallizing amorphous silicon using Joule's heat generated by the gate electrode.

    摘要翻译: 具有改进特性的薄膜晶体管(TFT),其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT由基板,设置在基板上的半导体层构成,包括沟道区,源极和漏极区,设置在半导体层上的栅极绝缘层,设置在栅极绝缘层上并对应于沟道的栅电极 区域,设置在栅电极上的层间绝缘层,以及电连接到半导体层的源极和漏极区的源极和漏极。 沟道区由多晶硅(poly-Si)制成,源极和漏极区由非晶硅(a-Si)制成。 沟道区域的多晶硅通过使用由栅电极产生的焦耳热结晶非晶硅而形成。

    Method of manufacturing organic light emitting display device
    4.
    发明申请
    Method of manufacturing organic light emitting display device 失效
    制造有机发光显示装置的方法

    公开(公告)号:US20110229994A1

    公开(公告)日:2011-09-22

    申请号:US12929912

    申请日:2011-02-24

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L33/08 H01L33/46

    摘要: A method of manufacturing an organic light emitting display device includes providing a substrate, the substrate including a first electrode on which a first photosensitive layer is formed, a second electrode on which a second photosensitive layer is formed, and an exposed third electrode, coating an organic layer on the substrate, and carrying out an ashing process to remove the organic layer and the second photosensitive layer and to partially remove the first photosensitive layer so as to avoid exposing the upper surface of the first electrode.

    摘要翻译: 一种制造有机发光显示装置的方法包括:提供基板,所述基板包括其上形成有第一感光层的第一电极,形成有第二感光层的第二电极和暴露的第三电极, 有机层,并且进行灰化处理以除去有机层和第二感光层,并且部分地除去第一感光层,以避免暴露第一电极的上表面。

    Flat panel display device
    5.
    发明授权
    Flat panel display device 有权
    平板显示设备

    公开(公告)号:US07838880B2

    公开(公告)日:2010-11-23

    申请号:US11529470

    申请日:2006-09-29

    IPC分类号: H01L29/04 H01L29/76 H01L31/06

    CPC分类号: H01L27/124 H01L27/3276

    摘要: A flat panel display device that includes a clad unit that may prevent terminals of a pad unit from becoming corroded or damaged by an etching solution during etching. The flat panel display device may include a display unit, a pad unit which may include a plurality of terminals electrically connecting the display unit to external devices, and a clad unit which may cover at least side end portions of the terminals, in which the clad unit may be composed of an insulating material.

    摘要翻译: 一种平板显示装置,包括可以防止焊盘单元的端子在蚀刻期间被蚀刻溶液腐蚀或损坏的包层单元。 平板显示装置可以包括显示单元,可以包括将显示单元电连接到外部设备的多个端子的焊盘单元和可以覆盖端子的至少侧端部的包层单元,其中, 单元可以由绝缘材料构成。

    One-touch type foldable tent
    6.
    发明申请
    One-touch type foldable tent 审中-公开
    一键式折叠帐篷

    公开(公告)号:US20070051399A1

    公开(公告)日:2007-03-08

    申请号:US10570550

    申请日:2004-09-22

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: E04H15/36

    CPC分类号: E04H15/48

    摘要: The present invention relates to a one-touch type foldable tent, and in particular to an improved one-touch type foldable tent in which the poles are concurrently folded and unfolded based on an operation of a connection assembly. The connection assembly is provided at an upper center of the tent for folding and unfolding the poles, and the upper sides of the poles are hinged at the center connection assembly.

    摘要翻译: 本发明涉及一触式折叠式帐篷,特别涉及一种改进的一触式折叠式帐篷,其中根据连接组件的操作,这些电极同时折叠和展开。 连接组件设置在帐篷的上部中心处,用于折叠和展开磁极,并且磁极的上侧在中心连接组件处铰接。

    Method of fabricating thin film transistor
    7.
    发明申请
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号:US20060046360A1

    公开(公告)日:2006-03-02

    申请号:US11206923

    申请日:2005-08-17

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L21/84 H01L21/20

    摘要: A method of fabricating a thin film transistor is provided. The method comprises first preparing a substrate and forming an amorphous silicon layer on the substrate. A catalyst construction is then positioned on the amorphous silicon layer and an anode and a cathode are then connected to the catalyst construction. A predetermined amount of electric power is then delivered to the anode and the cathode, generating joule heat which then crystallizes the portion of the amorphous silicon layer on which the catalyst construction is positioned, thereby forming a polysilicon layer. The remaining portion of the amorphous silicon layer is then crystallized to a polysilicon layer by propagating the crystallization of the portions of the polysilicon layer on which the catalyst construction is positioned.

    摘要翻译: 提供一种制造薄膜晶体管的方法。 该方法包括首先制备衬底并在衬底上形成非晶硅层。 然后将催化剂结构定位在非晶硅层上,然后将阳极和阴极连接到催化剂结构。 然后将预定量的电力输送到阳极和阴极,产生焦耳热,其然后使其上定位有催化剂结构的非晶硅层的部分结晶,从而形成多晶硅层。 然后通过传播其上放置有催化剂结构的多晶硅层的部分的结晶,将非晶硅层的剩余部分结晶成多晶硅层。

    Organic light-emitting display apparatus and method of manufacturing the same
    8.
    发明授权
    Organic light-emitting display apparatus and method of manufacturing the same 失效
    有机发光显示装置及其制造方法

    公开(公告)号:US08466467B2

    公开(公告)日:2013-06-18

    申请号:US13095666

    申请日:2011-04-27

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L27/32

    摘要: An organic light-emitting display apparatus includes: an active layer formed on the substrate; a gate electrode, in which a first insulation layer formed on the active layer, a first conductive layer formed on the first insulation layer and comprising a transparent conductive material, and a second conductive layer comprising a metal are sequentially stacked; a pixel electrode, in which a first electrode layer formed on the first insulation layer to be spaced apart from the gate electrode and comprising a transparent conductive material, a second electrode layer formed of a semi-permeable metal and comprising pores, and a third electrode layer comprising a metal are sequentially stacked; source/drain electrodes electrically connected to the active layer with a second insulation layer covering the gate electrode and the pixel electrode interposed therebetween; an electro-luminescence (EL) layer formed on the pixel electrode; and an opposite electrode formed on the EL layer to face the pixel electrode, wherein the second electrode layer comprises nano-sized silver (Ag) particles.

    摘要翻译: 一种有机发光显示装置,包括:形成在所述基板上的有源层; 顺序地堆叠栅电极,其中形成在有源层上的第一绝缘层,形成在第一绝缘层上并包括透明导电材料的第一导电层和包括金属的第二导电层; 像素电极,其中形成在第一绝缘层上的与栅电极间隔开并包括透明导电材料的第一电极层,由半透性金属形成且包含孔的第二电极层和第三电极 依次层叠包含金属的层; 电连接到有源层的源/漏电极与覆盖栅电极和插入其间的像素电极的第二绝缘层; 形成在像素电极上的电致发光(EL)层; 以及形成在EL层上以面对像素电极的相对电极,其中第二电极层包括纳米尺寸的银(Ag)颗粒。

    Method of manufacturing organic light emitting display
    9.
    发明申请
    Method of manufacturing organic light emitting display 审中-公开
    制造有机发光显示器的方法

    公开(公告)号:US20120028386A1

    公开(公告)日:2012-02-02

    申请号:US13067192

    申请日:2011-05-16

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L51/56

    CPC分类号: H01L27/3248 H01L2227/323

    摘要: A method of manufacturing an organic light-emitting display device, the method including forming a thin film transistor (TFT); forming a planarization layer on the TFT; forming an opening in the planarization layer; and forming an organic light emitting diode that is electrically connected to the TFT through the opening, wherein forming the opening in the planarization layer includes forming a photosensitive layer on the planarization layer, and irradiating light on the photosensitive layer such that the light has a focus point offset from a surface of the planarization layer to control a gradient of the opening.

    摘要翻译: 一种制造有机发光显示装置的方法,所述方法包括形成薄膜晶体管(TFT); 在TFT上形成平坦化层; 在平坦化层中形成开口; 以及形成通过所述开口电连接到所述TFT的有机发光二极管,其中在所述平坦化层中形成所述开口包括在所述平坦化层上形成感光层,以及在所述感光层上照射光以使得所述光具有焦点 从平坦化层的表面偏移以控制开口的梯度。

    Thin Film Transistor, Method of Fabricating the Same, and Organic Light Emitting Display Device Including the Same
    10.
    发明申请
    Thin Film Transistor, Method of Fabricating the Same, and Organic Light Emitting Display Device Including the Same 有权
    薄膜晶体管,其制造方法和包括其的有机发光显示装置

    公开(公告)号:US20110033992A1

    公开(公告)日:2011-02-10

    申请号:US12906830

    申请日:2010-10-18

    申请人: In-Young Jung

    发明人: In-Young Jung

    IPC分类号: H01L21/336

    摘要: A thin film transistor (TFT) having improved characteristics, a method for fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT is constructed with a substrate, a semiconductor layer disposed on the substrate and including a channel region, source and drain regions, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer and corresponding to the channel region, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer. The channel region is made from polycrystalline silicon (poly-Si), and the source and drain regions are made from amorphous silicon (a-Si). The polycrystalline silicon of the channel region is formed by crystallizing amorphous silicon using Joule's heat generated by the gate electrode.

    摘要翻译: 具有改进特性的薄膜晶体管(TFT),其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT由基板,设置在基板上的半导体层构成,包括沟道区,源极和漏极区,设置在半导体层上的栅极绝缘层,设置在栅极绝缘层上并对应于沟道的栅电极 区域,设置在栅电极上的层间绝缘层,以及电连接到半导体层的源极和漏极区的源极和漏极。 沟道区由多晶硅(poly-Si)制成,源极和漏极区由非晶硅(a-Si)制成。 沟道区域的多晶硅通过使用由栅电极产生的焦耳热结晶非晶硅而形成。