利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.023 秒)

    INTEGRATED CIRCUIT SYSTEM WITH SUB-GEOMETRY REMOVAL AND METHOD OF MANUFACTURE THEREOF
    1.
    发明申请
    INTEGRATED CIRCUIT SYSTEM WITH SUB-GEOMETRY REMOVAL AND METHOD OF MANUFACTURE THEREOF 有权
    具有子几何去除的集成电路系统及其制造方法

    公开(公告)号：US20090309192A1

    公开(公告)日：2009-12-17

    申请号：US12477448

    申请日：2009-06-03

    申请人： Soon Yoeng Tan ,  Huey Ming Chong ,  Byoung-IL Choi ,  Soo Muay Goh

    发明人： Soon Yoeng Tan ,  Huey Ming Chong ,  Byoung-IL Choi ,  Soo Muay Goh

    IPC分类号： H01L29/02 ,  H01L21/66

    CPC分类号： G03F1/36

    摘要： A method of manufacture of an integrated circuit system includes: forming reticle data; detecting a sub-geometry, a singularity, or a combination thereof in the reticle data; applying a unit cell, a patch cell, or a combination thereof for removing the sub-geometry, the singularity, or the combination thereof from the reticle data; and fabricating an integrated circuit from the reticle data.

    摘要翻译： 一种集成电路系统的制造方法，包括：形成掩模版数据; 在掩模版数据中检测子几何，奇点或其组合; 应用单元，补片或其组合以从掩模版数据中去除子几何，奇点或其组合; 并从掩模版数据制造集成电路。

    Integrated circuit system with sub-geometry removal and method of manufacture thereof
    2.
    发明授权
    Integrated circuit system with sub-geometry removal and method of manufacture thereof 有权
    具有子几何去除的集成电路系统及其制造方法

    公开(公告)号：US08293546B2

    公开(公告)日：2012-10-23

    申请号：US12477448

    申请日：2009-06-03

    申请人： Soon Yoeng Tan ,  Huey Ming Chong ,  Byoung-Il Choi ,  Soo Muay Goh

    发明人： Soon Yoeng Tan ,  Huey Ming Chong ,  Byoung-Il Choi ,  Soo Muay Goh

    IPC分类号： H01L21/66

    CPC分类号： G03F1/36

    摘要： A method of manufacture of an integrated circuit system includes: forming reticle data; detecting a sub-geometry, a singularity, or a combination thereof in the reticle data; applying a unit cell, a patch cell, or a combination thereof for removing the sub-geometry, the singularity, or the combination thereof from the reticle data; and fabricating an integrated circuit from the reticle data.

    摘要翻译： 一种集成电路系统的制造方法，包括：形成掩模版数据; 在掩模版数据中检测子几何，奇点或其组合; 应用单元，补片或其组合以从掩模版数据中去除子几何，奇点或其组合; 并从掩模版数据制造集成电路。

    Half tone alternating phase shift masks
    3.
    发明授权
    Half tone alternating phase shift masks 失效
    半色调交替相移掩模

    公开(公告)号：US07014962B2

    公开(公告)日：2006-03-21

    申请号：US10661048

    申请日：2003-09-13

    申请人： Qun Ying Lin ,  Sia Kim Tan ,  Soon Yoeng Tan ,  Huey Ming Chong

    发明人： Qun Ying Lin ,  Sia Kim Tan ,  Soon Yoeng Tan ,  Huey Ming Chong

    IPC分类号： G01F9/00 ,  G03C5/00

    CPC分类号： G03F1/32

    摘要： A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.

    摘要翻译： 一种结构，制造方法和使用具有第一相移部分，半色调部分和第二相移部分的相移掩模（PSM）的方法。 第一相移部分和半色调部分与第二相移区域移动180度。 实施例提供（1）半色调单沟槽交替相移掩模和（2）半色调双沟道交替相移掩模。 半色调区域提供优于常规交替相移掩模的优点。

    Mask and method to pattern chromeless phase lithography contact hole
    4.
    发明授权
    Mask and method to pattern chromeless phase lithography contact hole 有权
    掩模和方法来绘制无铬相光刻接触孔

    公开(公告)号：US08057968B2

    公开(公告)日：2011-11-15

    申请号：US12695167

    申请日：2010-01-28

    申请人： Sia Kim Tan ,  Soon Yoeng Tan ,  Qun Ying Lin ,  Huey Ming Chong ,  Liang Choo Hsia

    发明人： Sia Kim Tan ,  Soon Yoeng Tan ,  Qun Ying Lin ,  Huey Ming Chong ,  Liang Choo Hsia

    IPC分类号： G03F1/00

    CPC分类号： G03F1/34

    摘要： A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.

    摘要翻译： 公开了制作掩模的方法。 该方法包括提供第一和第二掩模层，并在第一掩模层上设置第一相移区域。 第二相移区域设置在第二掩模层上，其中第一和第二相移区域是异相的。 在第一相移区域中形成连续单元。 单元电池包括中心部分和不同的延伸部分。 延伸部分与中心部分相邻并向外延伸。 不同的延伸部分具有与中心部分相同的宽度。 第二相移区域与第一相移区域中的单元电池相邻。

    Method and apparatus for removing radiation side lobes
    5.
    发明授权
    Method and apparatus for removing radiation side lobes 有权
    用于去除辐射旁瓣的方法和装置

    公开(公告)号：US08048588B2

    公开(公告)日：2011-11-01

    申请号：US10970077

    申请日：2004-10-20

    申请人： Sia Kim Tan ,  Soon Yoeng Tan ,  Qunying Lin ,  Huey Ming Chong ,  Liang-Choo Hsia

    发明人： Sia Kim Tan ,  Soon Yoeng Tan ,  Qunying Lin ,  Huey Ming Chong ,  Liang-Choo Hsia

    IPC分类号： G03F1/00 ,  G03C5/00 ,  G06F17/50

    CPC分类号： G03F1/34 ,  G03F1/36

    摘要： A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.

    摘要翻译： 通过将第一和第二相的第一和第二辐射透明区域定位在第一平面上，其中第一和第二相基本上异相，来提供用于去除旁瓣的方法和结构。 此外，定位第一和第二区域以使第二平面上的辐射在第一区域中被中和，而不在第二区域中被中和，并且在第三区域中具有旁瓣。 此外，在第一平面处定位不透明区域以确保在第二平面处的辐射在第一区域中被中和，并且将第一或第二相的第三辐射透明区域定位在第一平面处以中和旁瓣 第三个地区在第二个飞机。

    Method for dual damascene patterning with single exposure using tri-tone phase shift mask
    6.
    发明授权
    Method for dual damascene patterning with single exposure using tri-tone phase shift mask 有权
    使用三色相移掩模的单次曝光的双镶嵌图案化方法

    公开(公告)号：US07288366B2

    公开(公告)日：2007-10-30

    申请号：US10693202

    申请日：2003-10-24

    申请人： Sia Kim Tan ,  Qun Ying Lin ,  Soon Yoeng Tan ,  Huey Ming Chong

    发明人： Sia Kim Tan ,  Qun Ying Lin ,  Soon Yoeng Tan ,  Huey Ming Chong

    IPC分类号： G03F9/00

    CPC分类号： G03F1/32

    摘要： A reticle structure and a method of forming a photoresist profile on a substrate using the reticle having a multi-level profile. The reticle comprises (1) a transparent substrate, (2) a partially transmitting 180 degree phase shift film overlying predetermined areas of the transparent substrate to transmit approximately 20 to 70% of incident light, and (3) an opaque film overlying the predetermined areas of the partially transmitting 180 degree phase shift film. The method comprises the following steps: a) depositing a photoresist film over the substrate; b) directing light to the photoresist film through the reticle, and c) developing the photoresist film to form an opening in the resist layer where light only passed thru the substrate, and to remove intermediate thickness of the photoresist film, in the areas where the light passed through the partially transmitting 180 degree phase shift film. In an aspect, the photoresist film is comprised of a lower photoresist layer and an upper photoresist layer. The lower photoresist layer is less sensitive to light than the upper photoresist layer. In an aspect, the resist profile is used to form a dual damascene shaped opening.

    摘要翻译： 掩模版结构和使用具有多层轮廓的掩模版在基板上形成光刻胶轮廓的方法。 掩模版包括（1）透明基板，（2）覆盖透明基板的预定区域的部分透射的180度相移膜，以透射大约20至70％的入射光，以及（3）覆盖预定区域的不透明膜 的部分透射180度相移膜。 该方法包括以下步骤：a）在衬底上沉积光致抗蚀剂膜; b）通过掩模版将光引导到光致抗蚀剂膜，以及c）使光致抗蚀剂膜显影，以在抗蚀剂层中形成光，其中只有光通过基底，并且除去光致抗蚀剂膜的中间厚度， 光通过部分透射的180度相移膜。 在一个方面，光致抗蚀剂膜由下光致抗蚀剂层和上光致抗蚀剂层组成。 下部光致抗蚀剂层比上部光致抗蚀剂层对光敏感性差。 在一方面，抗蚀剂轮廓用于形成双镶嵌形状的开口。

    Method and apparatus for contact hole unit cell formation
    7.
    发明授权
    Method and apparatus for contact hole unit cell formation 有权
    接触孔单元电池形成的方法和装置

    公开(公告)号：US07556891B2

    公开(公告)日：2009-07-07

    申请号：US10973182

    申请日：2004-10-25

    申请人： Soon Yoeng Tan ,  Sia Kim Tan ,  Qunying Lin ,  Huey Ming Chong ,  Liang-Choo Hsia

    发明人： Soon Yoeng Tan ,  Sia Kim Tan ,  Qunying Lin ,  Huey Ming Chong ,  Liang-Choo Hsia

    IPC分类号： G03F9/00 ,  G03F7/20

    CPC分类号： G03F1/29 ,  G03F1/26

    摘要： A method for forming a contact hole unit cell is provided. A light transparent contact hole region of a first phase is positioned at a first plane. A light transparent phase-shifting region of a second phase is positioned at the first plane, the second phase being substantially out of phase with the first phase. The phase-shifting region substantially surrounds the contact hole region. A light transparent border region is positioned at the first plane outside the phase-shifting region. The border region has a phase substantially the same as that of the contact hole region. A chrome pad is positioned at the first plane outside and contacting at least a portion of the border region. The contact hole region, the phase-shifting region, the border region, and the chrome pad are positioned to cause light from the first plane to be reinforcing in a target contact hole configuration on a second plane and to be substantially neutralizing outside the target contact hole configuration on the second plane.

    摘要翻译： 提供一种形成接触孔单元的方法。 第一相的透光接触孔区域位于第一平面。 第二相的光透明相移区位于第一平面处，第二相基本上与第一相不同相。 相移区域基本上围绕接触孔区域。 光透明边界区域位于相移区域外的第一平面处。 边界区域具有与接触孔区域大致相同的相位。 铬垫位于第一平面外部并与边界区域的至少一部分接触。 定位接触孔区域，相移区域，边界区域和铬焊盘以使得来自第一平面的光在第二平面上的目标接触孔构造中被加强并且基本上在目标接触点之外中和 孔配置在第二平面上。

    Providing conversion of a planar design to a FinFET design
    10.
    发明授权
    Providing conversion of a planar design to a FinFET design 有权
    提供平面设计到FinFET设计的转换

    公开(公告)号：US08533651B1

    公开(公告)日：2013-09-10

    申请号：US13552313

    申请日：2012-07-18

    申请人： Soon Yoeng Tan ,  Angeline Ho ,  Hendry Renaldo ,  Andreas Knorr ,  Scott Johnson

    发明人： Soon Yoeng Tan ,  Angeline Ho ,  Hendry Renaldo ,  Andreas Knorr ,  Scott Johnson

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5072 ,  G06F17/5077

    摘要： An approach for providing conversion of a planar design to a FinFET design is disclosed. Embodiments include: receiving a planar design having a plurality of diffusion regions; overlapping a plurality of parallel fin mandrels with a plurality of evenly-spaced parallel lines of a grid; snapping the diffusion regions to the grid based on the parallel lines; and generating a FinFET design based on the overlapping and the snapping. Embodiments include the parallel lines and the parallel fin mandrels being perpendicular to a poly orientation associated with the planar design, and determining a spacing length between the parallel lines; determining a plurality of edges of the diffusion regions that are parallel to the poly orientation; and cropping the diffusion regions until each of the edges has a length that is a multiple of the spacing length.

    摘要翻译： 公开了一种将平面设计转换成FinFET设计的方法。 实施例包括：接收具有多个扩散区域的平面设计; 将多个平行翅片心轴与网格的多个均匀间隔平行的线重叠; 基于平行线将扩散区捕捉到栅格; 并基于重叠和捕捉产生FinFET设计。 实施例包括垂直于与平面设计相关联的聚取向并且确定平行线之间的间隔长度的平行线和平行翅片心轴; 确定所述扩散区域的平行于所述聚取向的多个边缘; 并且切割扩散区域，直到每个边缘具有为间隔长度的倍数的长度。