Method to form a photovoltaic cell comprising a thin lamina
    2.
    发明授权
    Method to form a photovoltaic cell comprising a thin lamina 失效
    形成包括薄层的光伏电池的方法

    公开(公告)号:US08481845B2

    公开(公告)日:2013-07-09

    申请号:US12026530

    申请日:2008-02-05

    IPC分类号: H01L31/00 H01L21/00

    摘要: A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

    摘要翻译: 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面,随后的步骤在切割平面处从晶片剥离薄层。 光伏电池,或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中,在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上,或仅形成在一个表面上。

    METHOD TO FORM A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA
    5.
    发明申请
    METHOD TO FORM A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA 有权
    形成包含薄层薄膜的光电池的方法

    公开(公告)号:US20100009488A1

    公开(公告)日:2010-01-14

    申请号:US12499294

    申请日:2009-07-08

    IPC分类号: H01L31/18 H01L21/30

    摘要: A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

    摘要翻译: 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面,随后的步骤在切割平面处从晶片剥离薄层。 光伏电池,或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中,在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上,或仅形成在一个表面上。

    Method to form a photovoltaic cell comprising a thin lamina
    6.
    发明授权
    Method to form a photovoltaic cell comprising a thin lamina 有权
    形成包括薄层的光伏电池的方法

    公开(公告)号:US07842585B2

    公开(公告)日:2010-11-30

    申请号:US12208392

    申请日:2008-09-11

    IPC分类号: H01L21/00

    摘要: A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

    摘要翻译: 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面,随后的步骤在切割平面处从晶片剥离薄层。 光伏电池,或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中,在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上,或仅形成在一个表面上。

    METHOD TO FORM A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA
    7.
    发明申请
    METHOD TO FORM A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA 有权
    形成包含薄层薄膜的光电池的方法

    公开(公告)号:US20090197368A1

    公开(公告)日:2009-08-06

    申请号:US12208392

    申请日:2008-09-11

    IPC分类号: H01L21/00

    摘要: A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

    摘要翻译: 通过在诸如半导体晶片的施主体的表面下方注入气体离子形成非常薄的光伏电池。 离子注入限定了解理面,随后的步骤在切割平面处从晶片剥离薄层。 光伏电池,或光伏电池的基极或发射极的全部或一部分形成在层内。 在优选实施例中,在切割步骤之前将晶片固定到接收器。 电接触可以形成在层的两个表面上,或仅形成在一个表面上。

    METHODS OF TRANSFERRING A LAMINA TO A RECEIVER ELEMENT
    10.
    发明申请
    METHODS OF TRANSFERRING A LAMINA TO A RECEIVER ELEMENT 有权
    将接收器转移到接收器元件的方法

    公开(公告)号:US20100147448A1

    公开(公告)日:2010-06-17

    申请号:US12335479

    申请日:2008-12-15

    CPC分类号: H01L21/76254

    摘要: Methods for bonding a donor wafer to a receiver element and transferring a lamina from the donor wafer to the receiver element are disclosed herein. The donor wafer may be, for example, a monocrystalline silicon wafer with a thickness of from about 300 microns to about 1000 microns, and the lamina may be may be less than 100 microns thick. The receiver element may be composed of, for example, metal or glass, and the receiver element may have dissimilar thermal expansion properties from the lamina. Although the lamina and the receiver element may have dissimilar thermal expansion properties, the methods disclosed herein maintain the integrity of the bond between the lamina and the receiver element.

    摘要翻译: 本文公开了将施主晶片接合到接收器元件并将层从供体晶片传送到接收器元件的方法。 施主晶片可以是例如厚度为约300微米至约1000微米的单晶硅晶片,并且薄层可以小于100微米厚。 接收器元件可以由例如金属或玻璃构成,并且接收器元件可以具有与层片不同的热膨胀特性。 虽然层板和接收器元件可能具有不同的热膨胀性质,但是本文公开的方法保持了层间和接收器元件之间的接合的完整性。