公开(公告)号：US5674355A

公开(公告)日：1997-10-07

申请号：US483682

申请日：1995-06-07

申请人： Stephan Alan Cohen ,  Daniel Charles Edelstein ,  Alfred Grill ,  Jurij Rostyslav Paraszczak ,  Vishnubhai Vitthalbhai Patel

发明人： Stephan Alan Cohen ,  Daniel Charles Edelstein ,  Alfred Grill ,  Jurij Rostyslav Paraszczak ,  Vishnubhai Vitthalbhai Patel

IPC分类号： H01L21/8238 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L21/306

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02274 ,  H01L23/5329 ,  H01L2924/0002

摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

公开(公告)号：US5679269A

公开(公告)日：1997-10-21

申请号：US631239

申请日：1996-04-12

申请人： Stephan Alan Cohen ,  Daniel Charles Edelstein ,  Alfred Grill ,  Jurij Rostyslav Paraszczak ,  Vishnubhai Vitthalbhai Patel

发明人： Stephan Alan Cohen ,  Daniel Charles Edelstein ,  Alfred Grill ,  Jurij Rostyslav Paraszczak ,  Vishnubhai Vitthalbhai Patel

IPC分类号： H01L21/8238 ,  H01L21/314 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L21/00 ,  H01L31/0312

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02274 ,  H01L23/5329 ,  H01L2924/0002

摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

摘要翻译： 本发明涉及半导体器件，其包括作为其结构元件之一的类金刚石碳作为绝缘体，用于将集成电路芯片上的一个或多个级别的导体间隔开。 本发明还涉及一种形成一体结构的方法及其制造的一体结构。 本发明还提供了一种用于从含有这种层的衬底选择性地离子蚀刻类金刚石碳层的方法。

公开(公告)号：US20090292578A1

公开(公告)日：2009-11-26

申请号：US12123743

申请日：2008-05-20

申请人： Catalina Maria Danis ,  Brenda Lynn Dietrich ,  Thomas David Erickson ,  Pia T. Gospodinoff ,  Mary Elizabeth Helander ,  Wendy Anne Kellogg ,  Jurij Rostyslav Paraszczak ,  Rhonda Rosenbaum

发明人： Catalina Maria Danis ,  Brenda Lynn Dietrich ,  Thomas David Erickson ,  Pia T. Gospodinoff ,  Mary Elizabeth Helander ,  Wendy Anne Kellogg ,  Jurij Rostyslav Paraszczak ,  Rhonda Rosenbaum

IPC分类号： G06Q10/00

CPC分类号： G06Q10/06 ,  G06Q10/06311 ,  G06Q10/10

摘要： A method for determining an allocation of a workload includes identifying an employee in an organization having the workload, associating the employee with an articulation workload metric, and determining the allocation of the workload to the employee according to the articulation workload metric.

摘要翻译： 用于确定工作负载分配的方法包括识别具有工作负荷的组织中的雇员，将雇员与关节工作量度量相关联，以及根据关节工作量度量确定工作负载对员工的分配。