公开(公告)号：US20180334143A1

公开(公告)日：2018-11-22

申请号：US15986761

申请日：2018-05-22

Applicant: Steve Cummings

Inventor： Steve Cummings

IPC: B60S3/04 ,  B08B1/00

CPC classification number: B60S3/04 ,  B08B1/005

Abstract: A snow plow system which includes a frame, a snow plow, a chain hoist, and a removably attached stair case. The snow plow system is useful for the removal of snow from a vehicle's roof when the vehicle passes through the frame. The chain hoist may provide vertical adjustments to the snow plow to accommodate a variety of vehicle heights.

公开(公告)号：US07696567B2

公开(公告)日：2010-04-13

申请号：US11218184

申请日：2005-08-31

Applicant: Gordon Haller ,  Sanh Dang Tang ,  Steve Cummings

Inventor： Gordon Haller ,  Sanh Dang Tang ,  Steve Cummings

IPC: H01L29/94

CPC classification number: H01L21/823487 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888

Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Abstract translation: 包括垂直晶体管的存储器件包括直接耦合到每个存储器单元的源极区域的数字线。 由于不使用电插头来形成数字线和源极区之间的接触，所以可以减少多个制造步骤，并且还可以减少制造缺陷的可能性。 在一些实施例中，存储器件可以包括垂直晶体管，其具有从硅衬底的上部凹陷的栅极区域。 随着从硅衬底凹入的栅极区域，栅极区域与源极/漏极区域进一步间隔开，因此，可以减小栅极区域和源极/漏极区域之间的交叉电容。

公开(公告)号：US20070051997A1

公开(公告)日：2007-03-08

申请号：US11218184

申请日：2005-08-31

Applicant: Gordon Haller ,  Sanh Tang ,  Steve Cummings

Inventor： Gordon Haller ,  Sanh Tang ,  Steve Cummings

IPC: H01L29/94 ,  H01L21/8242

CPC classification number: H01L21/823487 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888

Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Abstract translation: 包括垂直晶体管的存储器件包括直接耦合到每个存储器单元的源极区域的数字线。 由于不使用电插头来形成数字线和源极区之间的接触，所以可以减少多个制造步骤，并且还可以减少制造缺陷的可能性。 在一些实施例中，存储器件可以包括垂直晶体管，其具有从硅衬底的上部凹陷的栅极区域。 随着从硅衬底凹入的栅极区域，栅极区域与源极/漏极区域进一步间隔开，因此，可以减小栅极区域和源极/漏极区域之间的交叉电容。

公开(公告)号：US20100242337A1

公开(公告)日：2010-09-30

申请号：US12384020

申请日：2009-03-30

Applicant: Steve Cummings

Inventor： Steve Cummings

IPC: A01K97/01 ,  A01K97/00 ,  A01K85/01

CPC classification number: A01K97/01

Abstract: An ice fishing hole lighting device has a solid frame with an opening within the frame having an average diameter of at least six inches. The frame has a top portion and a bottom portion, the bottom portion of the frame having a flat surface so as to lay against surfaces of ice, the bottom of the frame having between 2 and 12 high efficiency light emitting devices that emit light from the bottom portion of the frame without extending beyond the flat surface to interrupt contact between the flat surface and the ice surface. There are leads from the lights to a battery storage area, and a battery is in the battery storage area.

Abstract translation: 冰钓鱼眼照明装置具有在框架内具有平均直径至少为六英寸的开口的实心框架。 框架具有顶部和底部，框架的底部具有平坦的表面以便抵靠冰面，该框架的底部具有2至12个高效率的发光装置，其从 框架的底部部分不延伸超过平坦表面以中断平坦表面和冰面之间的接触。 灯具有电源线到电池存储区域，电池位于电池存储区域。

公开(公告)号：US20100232263A1

公开(公告)日：2010-09-16

申请号：US12305849

申请日：2007-06-26

Applicant: Jeff Kalis ,  Sterling Heibeck ,  Steve Cummings ,  Ron Richards

Inventor： Jeff Kalis ,  Sterling Heibeck ,  Steve Cummings ,  Ron Richards

IPC: G11B21/08

CPC classification number: G06F21/10 ,  G06F2221/2137

Abstract: An apparatus, system, and method for managing songs available for selection for play by a user is provided. Songs are assigned to one or more categories and time periods are set during which songs assigned to a category may be selected for play or may be blocked from being selected for play by a user.

Abstract translation: 提供了一种用于管理可供用户选择播放的歌曲的装置，系统和方法。 歌曲被分配到一个或多个类别，并且设置时间段，在此期间可以选择分配给类别的歌曲进行播放，或者可以阻止用户选择播放。

公开(公告)号：US20100144107A1

公开(公告)日：2010-06-10

申请号：US12703502

申请日：2010-02-10

Applicant: Gordon Haller ,  Sanh Dang Tang ,  Steve Cummings

Inventor： Gordon Haller ,  Sanh Dang Tang ,  Steve Cummings

IPC: H01L21/8242

CPC classification number: H01L21/823487 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888

Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Abstract translation: 包括垂直晶体管的存储器件包括直接耦合到每个存储器单元的源极区域的数字线。 由于不使用电插头来形成数字线和源极区之间的接触，所以可以减少多个制造步骤，并且还可以减少制造缺陷的可能性。 在一些实施例中，存储器件可以包括垂直晶体管，其具有从硅衬底的上部凹陷的栅极区域。 随着从硅衬底凹入的栅极区域，栅极区域与源极/漏极区域进一步间隔开，因此，可以减小栅极区域和源极/漏极区域之间的交叉电容。

公开(公告)号：US20090070369A1

公开(公告)日：2009-03-12

申请号：US11852787

申请日：2007-09-10

Applicant: Jeffrey J. Kalis ,  Jeff Martin ,  Sterling Heibeck ,  Steve Cummings

Inventor： Jeffrey J. Kalis ,  Jeff Martin ,  Sterling Heibeck ,  Steve Cummings

IPC: G06F7/06

CPC classification number: G06F17/30775 ,  G06F17/30749

Abstract: Systems and methods for searching entertainment content on a computer jukebox are provided in which, in exemplary embodiments, a user may select which music library to search if more than one music libraries are available for searching. Also provided is a system and method of searching entertainment content on a computer jukebox in which, in one embodiment, search results from a first music library are provided based on a input search criteria, and search results are provided from a second music library based on the same search criteria in response to only a single action performed by a user.

Abstract translation: 提供了用于在计算机自​​动存储器上搜索娱乐内容的系统和方法，其中在示例性实施例中，如果多于一个音乐库可用于搜索，则用户可以选择要搜索的音乐库。 还提供了一种在计算机自​​动点唱机上搜索娱乐内容的系统和方法，其中在一个实施例中，基于输入搜索标准提供来自第一音乐库的搜索结果，并且基于第二音乐库提供搜索结果 响应于用户执行的单个动作的相同搜索条件。

公开(公告)号：US08222105B2

公开(公告)日：2012-07-17

申请号：US12703502

申请日：2010-02-10

Applicant: Gordon Haller ,  Sanh D. Tang ,  Steve Cummings

Inventor： Gordon Haller ,  Sanh D. Tang ,  Steve Cummings

IPC: H01L29/94

CPC classification number: H01L21/823487 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888

Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.

Abstract translation: 包括垂直晶体管的存储器件包括直接耦合到每个存储器单元的源极区域的数字线。 由于不使用电插头来形成数字线和源极区之间的接触，所以可以减少多个制造步骤，并且还可以减少制造缺陷的可能性。 在一些实施例中，存储器件可以包括垂直晶体管，其具有从硅衬底的上部凹陷的栅极区域。 随着从硅衬底凹入的栅极区域，栅极区域与源极/漏极区域进一步间隔开，因此，可以减小栅极区域和源极/漏极区域之间的交叉电容。

公开(公告)号：US06492241B1

公开(公告)日：2002-12-10

申请号：US09546492

申请日：2000-04-10

Applicant: Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

Inventor： Howard E. Rhodes ,  Mark Visokay ,  Tom Graettinger ,  Dan Gealy ,  Gurtej Sandhu ,  Cem Basceri ,  Steve Cummings

IPC: H01L2972

CPC classification number: H01L28/60 ,  C23C16/40 ,  H01L28/55 ,  H01L28/90

Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

Abstract translation: 用于存储器件的电容器形成有用于底部电极的导电氧化物。 导电氧化物（RuOx）在低温下作为非晶膜沉积。 结果，膜被共形沉积在三维折叠结构上。 此外，随后的研磨步骤容易地在非晶膜上进行，提高了晶片生产量。 沉积和抛光后，膜在非氧化环境中结晶。

公开(公告)号：US10648214B2

公开(公告)日：2020-05-12

申请号：US15432705

申请日：2017-02-14

Applicant: Steve Cummings

Inventor： Steve Cummings

IPC: E05C17/60 ,  E05F3/22 ,  E05F5/06 ,  E05C17/12 ,  E05B47/00

Abstract: An electromechanical door supporting system for temporarily maintaining a door in an open position having: a) a housing with an electric motor in communication with a power source; b) a base plate sized to pass underneath a swinging door; c) the base plate extending away from the housing; d) the electric motor causing rotational movement in a rod extending from inside the housing, to outside the housing and over a surface of the base plate; e) a door supporting element extending perpendicular to the extended rod; and f) the door supporting element being attached to the extended rod at a proximal location and extending over the surface of the base plate to a distal end so that rotation of the extended rod causes the distal end of the door supporting element to elevate above the base plate to secure an opened door.