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公开(公告)号：US20120009135A1
公开(公告)日：2012-01-12
申请号：US12863646
申请日：2010-07-06
申请人： Steve Misner , Richard Adams , Richard Blume , Nilsa Rodriguez
发明人： Steve Misner , Richard Adams , Richard Blume , Nilsa Rodriguez
CPC分类号： A61K8/0229 , A45D40/16 , A61K8/342 , A61K8/86 , A61K8/922 , A61K2800/87 , A61Q15/00
摘要： Disclosed is a package for a personal care composition, the package comprising a container containing a personal care composition, the container having a base comprising a base face for standing the package on a planar surface, and a cap removably connected to and covering a dispensing end of the container opposite to the base. The cap has an end face which is inclined to the base face, and the container and cap are shaped to permit the package, independent of the amount of the personal care composition contained within the container, selectively to be stood on the base face in an upright orientation on the planar surface or on the end face in an inverted orientation on the planar surface.
摘要翻译： 公开了一种用于个人护理组合物的包装，该包装包括容纳个人护理组合物的容器，该容器具有包括用于将包装放置在平坦表面上的基面的底座以及可移除地连接到并覆盖分配端 的容器与基座相对。 盖具有与基面倾斜的端面，并且容器和盖被成形为允许包装，独立于容纳在容器内的个人护理组合物的量，选择性地站在基面上 在平坦表面上或端面上以平面表面上的倒置取向垂直取向。
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公开(公告)号：US08529919B2
公开(公告)日：2013-09-10
申请号：US12863646
申请日：2010-07-06
CPC分类号： A61K8/0229 , A45D40/16 , A61K8/342 , A61K8/86 , A61K8/922 , A61K2800/87 , A61Q15/00
摘要： Disclosed is a package for a personal care composition, the package comprising a container containing a personal care composition, the container having a base comprising a base face for standing the package on a planar surface, and a cap removably connected to and covering a dispensing end of the container opposite to the base. The cap has an end face which is inclined to the base face, and the container and cap are shaped to permit the package, independent of the amount of the personal care composition contained within the container, selectively to be stood on the base face in an upright orientation on the planar surface or on the end face in an inverted orientation on the planar surface.
摘要翻译： 公开了一种用于个人护理组合物的包装，该包装包括容纳个人护理组合物的容器，该容器具有包括用于将包装放置在平坦表面上的基面的底座以及可移除地连接并覆盖分配端 的容器与基座相对。 盖具有与基面倾斜的端面，并且容器和盖被成形为允许包装，独立于容纳在容器内的个人护理组合物的量，选择性地站在基面上 在平坦表面上或端面上以平面表面上的倒置取向垂直取向。
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公开(公告)号：US5891350A
公开(公告)日：1999-04-06
申请号：US666981
申请日：1996-06-20
申请人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
发明人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。
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公开(公告)号：US06221782B1
公开(公告)日：2001-04-24
申请号：US09287701
申请日：1999-04-06
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： H01L213065
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
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公开(公告)号：US5871321A
公开(公告)日：1999-02-16
申请号：US892546
申请日：1997-07-14
申请人： Michael Dutcher , Richard Blume , Hans Petrusk
发明人： Michael Dutcher , Richard Blume , Hans Petrusk
IPC分类号： H01L21/687 , F16B19/00 , F16B33/00
CPC分类号： H01L21/68721 , Y10S411/903 , Y10S411/914
摘要： An improved, process compatible fastener is especially useful for securing a member, such as a wafer clamp ring, to an assembly for use in a process environment. The fastener is of a simple design, such that it is readily manufactured, and such that it is not a source of contamination. In particular, an integrated fastener includes both a metal fastener and a cone shaped metal lock washer within a single fastener assembly, such that a single fastener is used for accomplish the function of a screw and a washer. All surfaces of the fastener that are exposed within the process environment are encapsulated in a process compatible material. In this way, the fastener may be secured in the process environment in a single operation without leaving any gaps or partially exposed surfaces that may introduce contaminants into the process environment, such that the integrated fastener also provides the function of a process compatible cap.
摘要翻译： 改进的与工艺相容的紧固件对于将诸如晶片夹环的构件固定到用于工艺环境的组件中是特别有用的。 紧固件具有简单的设计，使得其容易制造，并且使得其不是污染源。 特别地，整合的紧固件在单个紧固件组件中包括金属紧固件和锥形金属锁紧垫圈，使得单个紧固件用于实现螺钉和垫圈的功能。 在工艺环境中暴露的紧固件的所有表面都被封装在工艺兼容材料中。 以这种方式，紧固件可以在单一操作中固定在处理环境中，而不会留下可能将污染物引入过程环境的任何间隙或部分暴露的表面，使得集成紧固件还提供过程兼容盖的功能。
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公开(公告)号：US06513452B2
公开(公告)日：2003-02-04
申请号：US09841804
申请日：2001-04-24
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。
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