公开(公告)号：US5376505A

公开(公告)日：1994-12-27

申请号：US852272

申请日：1992-03-16

申请人： Steven D. Berger ,  William DeVore

发明人： Steven D. Berger ,  William DeVore

IPC分类号： H01J37/317 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： Fabrication of 0.25 gm design rule or smaller devices on chips, that may attain levels of 256 megabit or higher depends upon lithographic patterning by use of accelerated charged particle beams. Fabrication is expedited by acceleration values resulting in deBroglie wavelengths at least in order of magnitude smaller than such design rule to permit cost saving both in fabricating apparatus and resulting devices. Most importantly, such wavelength values permit significant variation in spatial angle of incidence of beam to wafer to permit both large instantaneous exposure areas and in temporal angle of incidence to expedite beam scanning as emitted from a fixed particle source.

摘要翻译： 通过使用加速带电粒子束，可能达到256兆位或更高级别的0.25 gm设计规则或芯片上的较小器件的制造取决于光刻图案化。 通过加速度值加速，导致deBroglie波长至少比这种设计规则小的数量级，以允许在制造装置和所得到的装置中节省成本。 最重要的是，这样的波长值允许光束到晶片的空间入射角度的显着变化，以允许大的瞬时曝光区域和时间入射角，从而从固定的粒子源发射来加快光束扫描。

公开(公告)号：US20070085033A1

公开(公告)日：2007-04-19

申请号：US11243363

申请日：2005-10-03

申请人： Benyamin Buller ,  William DeVore ,  Juergen Frosien ,  Xinrong Jiang ,  Richard Lozes ,  Henry Pearce-Percy ,  Dieter Winkler ,  Steven Coyle ,  Helmut Banzhof

发明人： Benyamin Buller ,  William DeVore ,  Juergen Frosien ,  Xinrong Jiang ,  Richard Lozes ,  Henry Pearce-Percy ,  Dieter Winkler ,  Steven Coyle ,  Helmut Banzhof

IPC分类号： G21G5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31754

摘要： An electron beam column comprises a thermal field emission electron source to generate an electron beam, an electron beam blanker, a beam shaping module, and electron beam optics comprising a plurality of electron beam lenses. In one version, the optical parameters of the electron beam blanker, beam shaping module, and electron beam optics are set to achieve an acceptance semi-angle β of from about ¼ to about 3 mrads, where the acceptance semi-angle β is the half the angle subtended by the electron beam at the writing plane. The beam-shaping module can also operate as a single lens using upper and lower projection lenses. A multifunction module for an electron beam column is also described.

摘要翻译： 电子束柱包括产生电子束的热场发射电子源，电子束消除器，光束整形模块和包括多个电子束透镜的电子束光学器件。 在一个版本中，电子束消隐器，光束整形模块和电子束光学器件的光学参数被设置为实现约¼至约3mrads的接受半角β，其中接受半角β是半 在写平面处电子束对着的角度。 光束成形模块也可以使用上下投影透镜作为单个透镜进行操作。 还描述了用于电子束柱的多功能模块。

公开(公告)号：US5876902A

公开(公告)日：1999-03-02

申请号：US789247

申请日：1997-01-28

申请人： Lee H. Veneklasen ,  William DeVore ,  R. L. Smith ,  Robin Teitzel

发明人： Lee H. Veneklasen ,  William DeVore ,  R. L. Smith ,  Robin Teitzel

IPC分类号： H01J37/302 ,  H01J37/317 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31776 ,  Y10S430/143

摘要： A hybrid exposure strategy for pattern generation uses wide field raster scan deflection and a uniformly moving stage to expose long stripes. Periodic analog wide field magnetic scan is augmented by a high speed electrostatic retrograde scan to keep the beam stationary during exposure of rectangular flash fields. The system's data path utilizes a pattern represented in a rasterized format. Intermediate vector data bases are created using fracture rules that limit feature and hierarchical cell size of to be smaller than overlapping fringes of stripe data fields. Rectangular flash fields are employed with each field being a 1 by n array of writing pixels. The length, origin position and dose of line shaped beam flashes can be varied to allow patterns to be exposed on a design grid much smaller than a writing pixel. The length, origin position and dose data for each flash is derived from a rasterized data format using a decoder device. In this manner multiple writing pixels are exposed simultaneously without compromising resolution or diagonal line edge roughness, thus enhancing exposure rate. A high flash rate is assured by including astigmatic illumination to maximize beam current, and leveraged co-planar blanking and shaping deflection to minimize drive voltages.

摘要翻译： 用于图案生成的混合曝光策略使用宽场光栅扫描偏转和均匀移动的阶段来暴露长条纹。 通过高速静电逆行扫描来增加定期的模拟广域磁扫描，以在矩形闪光场的曝光期间保持光束的静止。 系统的数据路径使用以光栅化格式表示的模式。 使用将特征和分层细胞大小限制为小于条带数据域的重叠条纹的断裂规则创建中间向量数据库。 采用矩形闪光场，每个场是1×n个写入像素阵列。 可以改变线形光束闪光的长度，原点位置和剂量，以允许图案暴露在比写入像素小得多的设计网格上。 每个闪存的长度，原始位置和剂量数据都是从使用解码器设备的光栅化数据格式导出的。 以这种方式，同时曝光多个写入像素而不损害分辨率或对角线边缘粗糙度，从而提高曝光率。 通过包括散光照明来最大限度地提高束电流，以及利用共面消隐和成形偏转以最小化驱动电压来确保高闪速。