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    Minimizing overetch during a chemical etching process
    1.
    发明授权
    Minimizing overetch during a chemical etching process 失效
    在化学蚀刻过程中最小化过蚀刻

    公开(公告)号：US5501766A

    公开(公告)日：1996-03-26

    申请号：US269864

    申请日：1994-06-30

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    IPC分类号： G01N27/02 ,  G01N27/46 ,  H01L21/00

    CPC分类号： G01N27/02

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

    摘要翻译： 公开了一种用于实时地原位监测化学蚀刻工艺的非接触式方法和装置，以使湿化学蚀刻剂浴中的至少一个晶片的过蚀刻最小化。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小值和最大值的时间以确定过蚀值。 将过蚀刻值与期望值进行比较以控制蚀刻工艺。 这种方法及其装置在湿化学蚀刻站中特别有用。

    Contactless real-time in-situ monitoring of a chemical etching
    3.
    发明授权
    Contactless real-time in-situ monitoring of a chemical etching 失效
    非接触式实时化学蚀刻实时监测

    公开(公告)号：US5516399A

    公开(公告)日：1996-05-14

    申请号：US269863

    申请日：1994-06-30

    申请人： Michael J. Balconi-Lamica ,  Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin Wai-chow Wong

    发明人： Michael J. Balconi-Lamica ,  Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin Wai-chow Wong

    IPC分类号： G01N27/02 ,  H01L21/306 ,  H01L21/66 ,  H01L21/00

    CPC分类号： B24B37/013 ,  H01L22/26 ,  H01L2924/0002

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

    摘要翻译： 公开了一种用于在湿化学蚀刻剂浴中蚀刻至少一个晶片的化学蚀刻工艺的实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供至少两个导电电极，其中所述至少两个电极接近但不与所述至少一个晶片接触，并且其中所述两个电极位于同一侧 的晶片; 以及监测所述至少两个电极之间的电特性，其中所述电特性的规定变化指示所述蚀刻工艺的规定条件。 这种方法和装置在湿化学蚀刻站中特别有用。

    Measuring film etching uniformity during a chemical etching process
    4.
    发明授权
    Measuring film etching uniformity during a chemical etching process 失效
    在化学蚀刻过程中测量膜蚀刻均匀性

    公开(公告)号：US5489361A

    公开(公告)日：1996-02-06

    申请号：US354567

    申请日：1994-12-13

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    IPC分类号： G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/66 ,  H01L21/00

    CPC分类号： B24B37/013 ,  G01N29/348 ,  G01N29/42 ,  G03F7/3028 ,  H01L22/26 ,  G01N2291/0231 ,  G01N2291/2694 ,  H01L2924/0002

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

    摘要翻译： 公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。 这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。

    Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
    5.
    发明授权
    Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint 失效
    用于无源晶片约束的湿化学蚀刻的原位非接触监测的夹具

    公开(公告)号：US5451289A

    公开(公告)日：1995-09-19

    申请号：US269859

    申请日：1994-06-30

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff

    IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/673 ,  H01L21/687 ,  H01L21/306

    CPC分类号： H01L21/67313 ,  B24B37/013 ,  H01L21/67086 ,  H01L21/67253 ,  H01L22/26 ,  H01L2924/0002

    摘要： A fixture for in-situ chemical etch monitoring of an etching process during etching of at least one wafer contained in a wafer carrier is disclosed. The fixture comprises a set of primary guide members for engaging and guiding a front portion of the wafer carrier. A set of rear guide members engages and guides a rear portion of the wafer carrier. A set of electrode arms is included for receiving a respective electrode and corresponding electrode wire thereon. A mounting plate establishes a prescribed spacing of the set of primary guide members with respect to the set of electrode arms. A means for self-locking the first wafer contained in the wafer boat is connected to the mounting plate and further positioned in a prescribed manner with respect to the set of primary guide members and the set of electrode arms. Lastly, a connecting means connects the mounting plate, the set of primary guide members, and the set of electrode arms to the set of rear guide members, whereby insertion of the wafer boat into the fixture establishes a prescribed distance between the set of electrode arms and the first wafer, and further wherein the first wafer is passively fixed by the self-locking means.

    摘要翻译： 公开了一种用于在蚀刻包含在晶片载体中的至少一个晶片的蚀刻过程中进行原位化学蚀刻监测的夹具。 夹具包括一组用于接合和引导晶片载体的前部的主导向构件。 一组后引导构件接合并引导晶片载体的后部。 包括一组电极臂用于在其上接收相应的电极和相应的电极线。 安装板相对于一组电极臂确定一组主导向构件的规定间隔。 用于自锁所述晶片舟皿中包含的第一晶片的装置被连接到所述安装板，并且相对于所述一组主引导构件和所述一组电极臂以规定的方式进一步定位。 最后，连接装置将安装板，一组主引导构件和一组电极臂连接到一组后引导构件，由此将晶片舟皿插入固定装置中在该组电极臂之间建立规定的距离 和所述第一晶片，并且其中所述第一晶片被所述自锁装置被动地固定。

    Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
    8.
    发明授权
    Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process 失效
    用于无接触实时原位监测化学蚀刻工艺的方法和装置

    公开(公告)号：US5456788A

    公开(公告)日：1995-10-10

    申请号：US414404

    申请日：1995-03-31

    申请人： Steven G. Barbee ,  Madhav Datta ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff ,  Ravindra V. Shenoy

    发明人： Steven G. Barbee ,  Madhav Datta ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff ,  Ravindra V. Shenoy

    IPC分类号： H01L21/66 ,  H01L21/306 ,  H01L21/3213 ,  C23F1/02

    CPC分类号： H01L21/32135

    摘要： A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

    摘要翻译： 公开了一种用于在用湿化学蚀刻剂蚀刻工件期间蚀刻工艺的原位化学蚀刻监测的非接触式方法和装置。 该方法包括提供具有参考表面的基底构件的步骤; 将工件可释放地固定到基座构件上; 提供设置在所述基座构件上的至少两个传感器以接近但不与所述工件表面的外周接触; 以及监测所述至少两个传感器之间的电特性，其中电特性的规定变化表示蚀刻处理的规定条件。

    Chemical etch monitor for measuring film etching uniformity during a chemical etching process
    10.
    发明授权
    Chemical etch monitor for measuring film etching uniformity during a chemical etching process 失效
    用于在化学蚀刻过程中测量膜蚀刻均匀性的化学蚀刻监测器

    公开(公告)号：US5573624A

    公开(公告)日：1996-11-12

    申请号：US269861

    申请日：1994-06-30

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    IPC分类号： G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/66 ,  C23F1/02

    CPC分类号： B24B37/013 ,  G01N29/348 ,  G01N29/42 ,  G03F7/3028 ,  H01L22/26 ,  G01N2291/0231 ,  G01N2291/2694 ,  H01L2924/0002

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

    摘要翻译： 公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。 这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。