公开(公告)号：US5996594A

公开(公告)日：1999-12-07

申请号：US666189

申请日：1996-03-19

申请人： Sudipto Ranendra Roy ,  Iqbal Ali ,  Gregory B. Shinn ,  Rajani C. Shah ,  Shelley H. Peterman ,  Srini Raghavan

发明人： Sudipto Ranendra Roy ,  Iqbal Ali ,  Gregory B. Shinn ,  Rajani C. Shah ,  Shelley H. Peterman ,  Srini Raghavan

IPC分类号： B08B1/04 ,  B08B3/12 ,  B24B37/34 ,  B24D13/14 ,  H01L21/00 ,  H01L21/306 ,  B08B1/02 ,  C03C15/00 ,  C23G1/02

CPC分类号： H01L21/67028 ,  B08B1/04 ,  B08B3/12 ,  B24B37/345 ,  B24D13/145 ,  H01L21/02074 ,  Y10S134/902

摘要： A post chemical-mechanical polishing clean-up process. Particles and ionic and metallic contaminants remaining on wafer 32 surface after CMP are removed and scratches are smoothed. The wafer 32 may be subjected to a high pressure/high rotational speed rinse at spindle rinse station 42 followed by buffing of the wafer 32 on a second polishing platen 38. If desired, a second high pressure/high speed rinse at spindle rinse station 42 may be performed after the buffing step. The wafer 32 may then be then transferred to a tank 50 for a megasonic bath and after the megasonic bath, the wafer 32 is transferred to a scrubber 44, which scrubs both surfaces of the wafer 32 with brushes and then spins the wafer 32 dry as spin station 84. All transfers are performed in a solution such as DI water to prevent drying of slurry on the wafer surface.

摘要翻译： 后化学机械抛光清理过程。 在CMP之后残留在晶片32表面上的颗粒和离子和金属污染物被除去并且刮擦变得平滑。 晶片32可以在主轴漂洗站42处进行高压/高转速冲洗，随后在第二研磨台板38上抛光晶片32.如果需要，在主轴漂洗站42处进行第二次高压/高速冲洗 可以在抛光步骤之后进行。 然后可以将晶片32转移到用于兆声波槽的箱50中，并且在超声波浴之后，将晶片32转移到洗涤器44，擦洗器44用刷子擦洗晶片32的两个表面，然后将晶片32旋转干燥，如 旋转站84.所有转移在诸如去离子水的溶液中进行以防止在晶片表面上的浆料干燥。