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1.发明授权公开(公告)号：US07930058B2
公开(公告)日：2011-04-19
申请号：US11967743
申请日：2007-12-31
CPC分类号： B24B37/28 , B24B7/228 , B24B37/005 , B24B51/00
摘要： Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
摘要翻译： 使用具有一对砂轮的双面研磨机处理晶片。 翘曲数据通过用于通过双面研磨机测量晶片的翘曲的翘曲测量装置获得。 接收翘曲数据，并且基于接收的翘曲数据预测晶片的纳米形貌。 基于晶片的预测的纳米形貌确定研磨参数。 基于确定的研磨参数调整双面研磨机的操作。
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2.发明申请Methods and Systems For Adjusting Operation Of A Wafer Grinder Using Feedback from Warp Data 有权使用反相数据调整晶圆磨床操作的方法和系统公开(公告)号：US20110045740A1
公开(公告)日：2011-02-24
申请号：US12891357
申请日：2010-09-27
IPC分类号： B24B49/00
CPC分类号： B24B37/28 , B24B7/228 , B24B37/005 , B24B51/00
摘要： Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
摘要翻译： 使用具有一对砂轮的双面研磨机处理晶片。 翘曲数据通过用于通过双面研磨机测量晶片的翘曲的翘曲测量装置获得。 接收翘曲数据，并且基于接收的翘曲数据预测晶片的纳米形貌。 基于晶片的预测的纳米形貌确定研磨参数。 基于确定的研磨参数调整双面研磨机的操作。
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3.发明申请NANOTOPOGRAPHY CONTROL AND OPTIMIZATION USING FEEDBACK FROM WARP DATA 有权使用WARP数据的反馈进行NANOTOPOGRAPHY控制和优化公开(公告)号：US20080166948A1
公开(公告)日：2008-07-10
申请号：US11967743
申请日：2007-12-31
IPC分类号： B24B49/00
CPC分类号： B24B37/28 , B24B7/228 , B24B37/005 , B24B51/00
摘要： Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
摘要翻译： 使用具有一对砂轮的双面研磨机处理晶片。 翘曲数据通过用于通过双面研磨机测量晶片的翘曲的翘曲测量装置获得。 接收翘曲数据，并且基于接收的翘曲数据预测晶片的纳米形貌。 基于晶片的预测的纳米形貌确定研磨参数。 基于确定的研磨参数调整双面研磨机的操作。
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4.发明授权Methods and systems for adjusting operation of a wafer grinder using feedback from warp data 有权使用来自翘曲数据的反馈来调整晶片研磨机的操作的方法和系统公开(公告)号：US08145342B2
公开(公告)日：2012-03-27
申请号：US12891357
申请日：2010-09-27
IPC分类号： G06F19/00 , G03C5/00 , G03F7/00 , H01L21/302 , H01L21/461 , B24B49/00 , B24B51/00 , B24B1/00 , B24B7/00 , B24B9/00 , B24B29/00 , B24B5/00
CPC分类号： B24B37/28 , B24B7/228 , B24B37/005 , B24B51/00
摘要： Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
摘要翻译： 使用具有一对砂轮的双面研磨机处理晶片。 翘曲数据通过用于通过双面研磨机测量晶片的翘曲的翘曲测量装置获得。 接收翘曲数据，并且基于接收的翘曲数据预测晶片的纳米形貌。 基于晶片的预测的纳米形貌确定研磨参数。 基于确定的研磨参数调整双面研磨机的操作。
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5.发明授权公开(公告)号：US08267745B2
公开(公告)日：2012-09-18
申请号：US12899262
申请日：2010-10-06
IPC分类号： B24B1/00
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译： 本文公开了用静压垫保持工件的方法。 衬垫包括形成在与晶片直接相对的身体的表面中的静水压凹坑。 凹穴适于接收流体通过主体并进入凹穴，以在主体面和工件之间提供阻挡物，同时在研磨期间仍然施加压力以保持工件。 静压垫允许晶片相对于垫围绕它们的公共轴线旋转。 当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。
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6.发明申请公开(公告)号：US20110101504A1
公开(公告)日：2011-05-05
申请号：US12899262
申请日：2010-10-06
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译： 本文公开了用静压垫保持工件的方法。 衬垫包括形成在与晶片直接相对的身体的表面中的静水压凹坑。 凹穴适于接收流体通过主体并进入凹穴，以在主体面和工件之间提供阻挡物，同时在研磨期间仍然施加压力以保持工件。 静压垫允许晶片相对于垫围绕其公共轴线旋转。 当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。
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公开(公告)号：US08066553B2
公开(公告)日：2011-11-29
申请号：US10598851
申请日：2005-01-20
IPC分类号： B24B41/06
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： A hydrostatic pad for use in holding a semiconductor wafer during grinding of the wafer by grinding wheels. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译： 一种静压垫，用于在通过研磨轮磨削晶片时保持半导体晶片。 衬垫包括形成在与晶片直接相对的身体的表面中的静水压凹坑。 凹穴适于接收流体通过主体并进入凹穴，以在主体面和工件之间提供阻挡物，同时在研磨期间仍然施加压力以保持工件。 静压垫允许晶片相对于垫围绕其公共轴线旋转。 当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。
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公开(公告)号：US20080020684A1
公开(公告)日：2008-01-24
申请号：US10598851
申请日：2005-01-20
IPC分类号： B24B37/04
CPC分类号： B24B7/228 , B24B7/17 , B24B37/08 , B24B37/28 , B24B41/061
摘要： A hydrostatic pad for use in holding a semiconductor wafer during grinding of the wafer by grinding wheels. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
摘要翻译： 一种静压垫，用于在通过研磨轮磨削晶片时保持半导体晶片。 衬垫包括形成在与晶片直接相对的身体的表面上的静压袋。凹穴适于接收通过本体并进入凹穴中的流体，以在身体表面和工件之间提供屏障，同时仍然施加压力以保持工件 在研磨过程中。 静压垫允许晶片相对于垫围绕其公共轴线旋转。 当砂轮相对于静液压垫移动或倾斜时，袋被定向成减小在晶片中产生的流体静力弯矩，有助于防止通常由砂轮的移动和倾斜引起的晶片表面的纳米拓扑降解。
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