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公开(公告)号：US10453689B2
公开(公告)日：2019-10-22
申请号：US15457841
申请日：2017-03-13
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66 , H01J37/317 , H01L29/36 , H01L29/66 , H01L29/04
摘要： An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.
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公开(公告)号：US20240047176A1
公开(公告)日：2024-02-08
申请号：US18488854
申请日：2023-10-17
发明人： Yoji Kawasaki , Haruka Sasaki
IPC分类号： H01J37/317 , H01L21/04 , H01L21/324 , H01L21/265
CPC分类号： H01J37/3171 , H01L21/047 , H01L21/324 , H01L21/26586 , H01L22/14
摘要： An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.
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公开(公告)号：US10121666B2
公开(公告)日：2018-11-06
申请号：US15374181
申请日：2016-12-09
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66 , H01J37/317
摘要： An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.
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公开(公告)号：US20200027697A1
公开(公告)日：2020-01-23
申请号：US16512059
申请日：2019-07-15
发明人： Yoji Kawasaki , Haruka Sasaki
IPC分类号： H01J37/317 , H01L21/04 , H01L21/265 , H01L21/324
摘要： An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.
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公开(公告)号：US11830703B2
公开(公告)日：2023-11-28
申请号：US16512059
申请日：2019-07-15
发明人： Yoji Kawasaki , Haruka Sasaki
IPC分类号： H01J37/317 , H01L21/04 , H01L21/324 , H01L21/265 , H01L21/66
CPC分类号： H01J37/3171 , H01L21/047 , H01L21/26586 , H01L21/324 , H01L22/14
摘要： An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.
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公开(公告)号：US20170271161A1
公开(公告)日：2017-09-21
申请号：US15457841
申请日：2017-03-13
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01L21/66
摘要： An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.
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公开(公告)号：US20170170020A1
公开(公告)日：2017-06-15
申请号：US15374181
申请日：2016-12-09
发明人： Yoji Kawasaki , Makoto Sano , Kazutaka Tsukahara
IPC分类号： H01L21/265 , H01J37/317 , H01L21/66
CPC分类号： H01L21/26586 , H01J37/3171 , H01L22/14 , H01L22/20
摘要： An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.
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