Ion implanter and method of controlling ion implanter

    公开(公告)号:US10854418B2

    公开(公告)日:2020-12-01

    申请号:US16197523

    申请日:2018-11-21

    发明人: Haruka Sasaki

    摘要: A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

    Ion implantation method and ion implantation apparatus

    公开(公告)号:US10395890B2

    公开(公告)日:2019-08-27

    申请号:US15862335

    申请日:2018-01-04

    发明人: Haruka Sasaki

    摘要: An ion implantation apparatus includes: a multistage linear acceleration unit including a plurality of stages of high-frequency resonators and a plurality of stages of focusing lenses; a first beam measuring unit disposed in the middle of the multistage linear acceleration unit and configured to allow passage of a beam portion adjacent to a center of a beam trajectory and measure a current intensity of another beam portion blocked by an electrode body outside a vicinity of the center of the beam trajectory; a second beam measuring unit disposed downstream of the multistage linear acceleration unit and configured to measure a current intensity of an ion beam exiting from the multistage linear acceleration unit; and a control device configured to adjust a control parameter of the plurality of stages of focusing lenses based on measurement results of the first and second beam measuring units.

    ION IMPLANTER AND METHOD OF CONTROLLING ION IMPLANTER

    公开(公告)号:US20190157035A1

    公开(公告)日:2019-05-23

    申请号:US16197523

    申请日:2018-11-21

    发明人: Haruka Sasaki

    摘要: A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

    Ion implanter, beam energy measuring device, and method of measuring beam energy
    5.
    发明授权
    Ion implanter, beam energy measuring device, and method of measuring beam energy 有权
    离子注入机,光束能量测量装置和测量光束能量的方法

    公开(公告)号:US09343263B2

    公开(公告)日:2016-05-17

    申请号:US14656132

    申请日:2015-03-12

    摘要: A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

    摘要翻译: 离子注入机中的光束能量测量装置包括平行度测量单元,其测量在离子注入机的光束准直器的下游处的离子束的平行度,以及能量计算单元,其计算来自所测量的平行度的离子束的能量 。 离子注入机还可以包括控制单元,其基于所测量的离子束的能量来控制高能量多级线性加速单元,使得离子束具有目标能量。

    High-energy ion implanter
    8.
    发明授权
    High-energy ion implanter 有权
    高能离子注入机

    公开(公告)号:US09390890B2

    公开(公告)日:2016-07-12

    申请号:US14290406

    申请日:2014-05-29

    IPC分类号: H01J37/317 H05H7/04 H05H9/04

    摘要: A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.

    摘要翻译: 高能离子注入机包括加速离子束以产生高能离子束的高能多级线性加速单元,将高能离子束朝向半导体的方向改变的偏转单元 晶片和将偏转的高能离子束传送到晶片的光束传输单元。 光束传输单元包括光束整形器,高能束扫描器,高能电场型光束准直仪和高能电场型最终能量滤光器。

    Ion implantation apparatus, beam parallelizing apparatus, and ion implantation method
    9.
    发明授权
    Ion implantation apparatus, beam parallelizing apparatus, and ion implantation method 有权
    离子注入装置,光束并行化装置和离子注入方法

    公开(公告)号:US09343262B2

    公开(公告)日:2016-05-17

    申请号:US14468844

    申请日:2014-08-26

    摘要: An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.

    摘要翻译: 离子注入装置包括光束并联单元和第三电源单元。 光束并行化单元包括加速透镜和在离子束输送方向上与加速透镜相邻设置的减速透镜。 第三电源单元在多个能量设置之一下操作光束并联单元。 多个能量设置包括适于运输低能量离子的第一能量设定和适于运输高能离子束的第二能量设定。 第三电源单元被配置为在第二能量设定下至少在加速透镜中产生电位差,并且在第一能量设定下产生至少减速透镜的电位差。 减速透镜的曲率小于加速度透镜的曲率。

    ION IMPLANTER AND ELECTROSTATIC QUADRUPOLE LENS DEVICE

    公开(公告)号:US20220285127A1

    公开(公告)日:2022-09-08

    申请号:US17683895

    申请日:2022-03-01

    摘要: An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.