公开(公告)号：US06605529B2

公开(公告)日：2003-08-12

申请号：US09853317

申请日：2001-05-11

申请人： Sundar Chetlur ,  Jennifer M. McKinley ,  Minesh A. Patel ,  Pradip K. Roy ,  Jonathan Zhong-Ning Zhou

发明人： Sundar Chetlur ,  Jennifer M. McKinley ,  Minesh A. Patel ,  Pradip K. Roy ,  Jonathan Zhong-Ning Zhou

IPC分类号： H01L214763

CPC分类号： H01L21/28194 ,  H01L21/28035 ,  H01L21/28176 ,  H01L21/28211 ,  H01L21/3003 ,  H01L29/4925 ,  H01L29/51 ,  H01L29/513

摘要： The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.

公开(公告)号：US06229141B1

公开(公告)日：2001-05-08

申请号：US09138740

申请日：1998-08-24

申请人： Frederick A. Stevie ,  Jennifer M. McKinley

发明人： Frederick A. Stevie ,  Jennifer M. McKinley

IPC分类号： G01N23225

CPC分类号： G01N23/225

摘要： A method for utilizing secondary ion mass spectrometry (SIMS) analysis allows for the accurate determination of alkali elements in insulator materials by controlling the penetration depth of an electron beam used for charge neutralization so as to minimize the movement of alkali elements in the insulator. The method can be employed in connection with both magnetic sector SIMS instruments and quadrupole SIMS instruments.

摘要翻译： 利用二次离子质谱法（SIMS）分析方法，可以通过控制用于电荷中和的电子束的穿透深度来精确测定绝缘体材料中的碱元素，从而使绝缘体中碱元素的运动最小化。 该方法可以与磁性扇区SIMS仪器和四极SIMS仪器结合使用。