公开(公告)号：US20060126689A1

公开(公告)日：2006-06-15

申请号：US11265712

申请日：2005-11-02

申请人： Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

发明人： Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

IPC分类号： H01S5/00

CPC分类号： H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

公开(公告)号：US20070093004A1

公开(公告)日：2007-04-26

申请号：US11488895

申请日：2006-07-19

申请人： Sang Park ,  Chi Hwang ,  Hye Chu ,  Jeong Lee ,  Jin Lee ,  Ho Kwack ,  Yong Lee ,  Seung Kang

发明人： Sang Park ,  Chi Hwang ,  Hye Chu ,  Jeong Lee ,  Jin Lee ,  Ho Kwack ,  Yong Lee ,  Seung Kang

IPC分类号： H01L21/84

CPC分类号： H01L29/7869

摘要： Provided is a method of manufacturing a thin film transistor (TFT) including a transparent ZnO thin layer that is formed at a low temperature by causing a surface chemical reaction between precursors containing elements constituting the ZnO thin layer. The method includes the steps of: depositing a gate metal layer on a substrate and forming a gate electrode using photolithography and selective etching processes; depositing a gate insulator on the substrate having the gate electrode; forming source and drain electrodes; and depositing a ZnO thin layer on the gate insulator using a surface chemical reaction between precursors containing elements constituting the ZnO thin layer.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法，该薄膜晶体管（TFT）包括通过在构成ZnO薄层的元件的前体之间引起表面化学反应而在低温下形成的透明ZnO薄层。 该方法包括以下步骤：在衬底上沉积栅极金属层并使用光刻和选择性蚀刻工艺形成栅电极; 在具有栅电极的衬底上沉积栅极绝缘体; 形成源极和漏极; 以及使用包含构成ZnO薄层的元素的前体之间的表面化学反应在栅极绝缘体上沉积ZnO薄层。