公开(公告)号：US20230369827A1

公开(公告)日：2023-11-16

申请号：US18245071

申请日：2021-09-03

Applicant: ams-OSRAM International GmbH

Inventor： Alexander Behres ,  Christian Lauer ,  Martin Hetzl

IPC: H01S5/22

CPC classification number: H01S5/2215

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

公开(公告)号：US20170256915A1

公开(公告)日：2017-09-07

申请号：US15447484

申请日：2017-03-02

Applicant: Princeton Optronics, Inc.

Inventor： Chuni Ghosh ,  Jean-Francois Seurin ,  Delai Zhou ,  Laurence Watkins

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/34 ,  H01S5/22 ,  H01S5/187 ,  H01S5/30

CPC classification number: H01S5/18361 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/06226 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18355 ,  H01S5/18383 ,  H01S5/18386 ,  H01S5/187 ,  H01S5/2215 ,  H01S5/3095 ,  H01S5/34 ,  H01S5/423

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.

公开(公告)号：US09397480B2

公开(公告)日：2016-07-19

申请号：US14702370

申请日：2015-05-01

Applicant: nanoplus Nanosystems and Technologies GmbH

Inventor： Johannes Koeth ,  Lars Nähle

IPC: H01S5/34 ,  H01S5/20 ,  H01S5/10 ,  H01S5/065 ,  H01S5/22 ,  H01S5/12

CPC classification number: H01S5/3402 ,  H01S5/065 ,  H01S5/10 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/2215 ,  H01S2301/176

Abstract: Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.

Abstract translation: 实施例涉及一种具有多层结构的半导体激光器，该多层结构包括脊和两侧相邻的脊的两个材料去除区域，多层结构布置在基底上，层膨胀平面由基底的表面限定， 具有至少一个活性区域，并且至少该活性区域在空间上受到在层扩展平面的一个维度中的脊与材料去除区域之间的通道的限制，该有源区域具有用于形成带间级联激光器的层结构。

公开(公告)号：US07672347B2

公开(公告)日：2010-03-02

申请号：US11125703

申请日：2005-05-10

Applicant: Yuichi Kuromizu

Inventor： Yuichi Kuromizu

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/2202 ,  H01S5/2215 ,  H01S5/34326

Abstract: A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.

Abstract translation: 一种半导体发光器件，包括：衬底; 包括第一半导体层，有源层和第二半导体层的层压结构; 以及电流限制部件，用于限制所述衬底上的所述第二半导体层中的有源层或所述有源层和所述第二半导体层之间的有源层的电流注入区域，其中所述电流限制部分包括具有导电区域的电流限制层 对应于有源层的电流注入区域和对应于有源层的电流注入区域以外的区域的非导电区域，以及按顺序设置在电流限制层和第二半导体层或有源层之间的中间层 以防止在电流限制层和第二半导体层或有源层之间形成混晶。

公开(公告)号：US20060126689A1

公开(公告)日：2006-06-15

申请号：US11265712

申请日：2005-11-02

Applicant: Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

Inventor： Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

Abstract: Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

公开(公告)号：US20050271105A1

公开(公告)日：2005-12-08

申请号：US11125703

申请日：2005-05-10

Applicant: Yuichi Kuromizu

Inventor： Yuichi Kuromizu

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/2202 ,  H01S5/2215 ,  H01S5/34326

Abstract: A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.

Abstract translation: 一种半导体发光器件，包括：衬底; 包括第一半导体层，有源层和第二半导体层的层压结构; 以及电流限制部件，用于限制所述衬底上的所述第二半导体层中的有源层或所述有源层和所述第二半导体层之间的有源层的电流注入区域，其中所述电流限制部分包括具有导电区域的电流限制层 对应于有源层的电流注入区域和对应于有源层的电流注入区域以外的区域的非导电区域，以及按顺序设置在电流限制层和第二半导体层或有源层之间的中间层 以防止在电流限制层和第二半导体层或有源层之间形成混晶。

公开(公告)号：US06920165B2

公开(公告)日：2005-07-19

申请号：US10373566

申请日：2003-02-26

Applicant: Jack L. Jewell ,  Henryk Temkin

Inventor： Jack L. Jewell ,  Henryk Temkin

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

Abstract translation: 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其它材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US20040191938A1

公开(公告)日：2004-09-30

申请号：US10817800

申请日：2004-04-06

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Daisuke Ueda ,  Shinichi Takigawa

IPC: H01L031/109

CPC classification number: B82Y20/00 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/34333

Abstract: An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.

Abstract translation: 由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层 在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。 形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

公开(公告)号：US06746948B2

公开(公告)日：2004-06-08

申请号：US10243711

申请日：2002-09-16

Applicant: Daisuke Ueda ,  Shinichi Takigawa

Inventor： Daisuke Ueda ,  Shinichi Takigawa

IPC: H01L2128

CPC classification number: B82Y20/00 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2214 ,  H01S5/2215 ,  H01S5/34333

Abstract: An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms.

Abstract translation: 由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层 在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。 形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。

公开(公告)号：US20030132454A1

公开(公告)日：2003-07-17

申请号：US10204500

申请日：2002-11-13

Inventor： Alfred Lell ,  Volker Harle ,  Berthold Hahn ,  Johann Luft

IPC: H01L031/0328

CPC classification number: H01S5/2232 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/32341

Abstract: According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.

Abstract translation: 根据本发明，制造了用于发射电磁辐射，特别是光的半导体部件，其具有以下特征：用于产生辐射的有源层，电连接到有源层的p型接触， 电连接到有源层的电流限制结构，以及限定电流路径的电流限制结构，其中电流限制结构设置在n型触点和有源层之间。