公开(公告)号：US20190140424A1

公开(公告)日：2019-05-09

申请号：US16239657

申请日：2019-01-04

Applicant: International Business Machines Corporation

Inventor： Cheng-Wei Cheng ,  Effendi Leobandung ,  Ning Li ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01S5/183 ,  H01L31/18 ,  H01S5/02 ,  H01L31/0232 ,  H01L31/0304 ,  H01L33/30 ,  H01L33/12 ,  H01L33/10 ,  H01L33/00 ,  H01L31/105 ,  H01S5/187 ,  H01S5/343 ,  H01L33/02

CPC classification number: H01S5/18377 ,  H01L31/02327 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/1852 ,  H01L33/0012 ,  H01L33/0066 ,  H01L33/025 ,  H01L33/105 ,  H01L33/12 ,  H01L33/30 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/0262 ,  H01S5/18361 ,  H01S5/187 ,  H01S5/3432 ,  H01S5/34366

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8

公开(公告)号：US20170271846A1

公开(公告)日：2017-09-21

申请号：US15505836

申请日：2015-08-21

Applicant: The University of Sheffield

Inventor： Richard James Edward Taylor ,  David T. D. Childs ,  Richard Hogg

IPC: H01S5/10 ,  H01S5/20 ,  H01S5/40 ,  H01S5/024 ,  H01S5/187 ,  H01S5/42 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/105 ,  H01S5/02453 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0608 ,  H01S5/0612 ,  H01S5/0614 ,  H01S5/1021 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/18 ,  H01S5/18319 ,  H01S5/1833 ,  H01S5/187 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/34353 ,  H01S5/3436 ,  H01S5/34366 ,  H01S5/4012 ,  H01S5/4075 ,  H01S5/42 ,  H01S5/423

Abstract: A laser structure comprising a first photonic crystal surface emitting laser (PCSEL), a second PCSEL, and a coupling region that extends between the first PCSEL and the second PCSEL along a longitudinal axis and that is electrically controllable so as to be capable of coherently coupling the first PCSEL to the second PCSEL. Each PCSEL include an active layer, a photonic crystal, and a two-dimensional periodic array distributed in an array plane parallel to the longitudinal axis within the photonic crystal where the two-dimensional periodic array is formed of regions having a refractive index that is different to the surrounding photonic crystal.

公开(公告)号：US20130028279A1

公开(公告)日：2013-01-31

申请号：US13558628

申请日：2012-07-26

Applicant: Vladimir IAKOVLEV ,  Pascal GALLO ,  Elyahou KAPON ,  Tomasz CZYSZANOWSKI ,  Maciej DEMS ,  Michal WASIAK ,  Jaroslaw WALCZAK

Inventor： Vladimir IAKOVLEV ,  Pascal GALLO ,  Elyahou KAPON ,  Tomasz CZYSZANOWSKI ,  Maciej DEMS ,  Michal WASIAK ,  Jaroslaw WALCZAK

IPC: H01S5/024

CPC classification number: H01S5/02484 ,  B82Y20/00 ,  H01S5/0035 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18319 ,  H01S5/34366

Abstract: The present invention concerns new designs of VCLs with high contrast gratings (HCG) combined with diamond layer as a bottom mirror. They can be realized either with a classical V-shaped pumping scenario, or through the introduction of the pumping beam from the bottom direction, through the HCG that can be designed to be transparent at the wavelength of the pumping light. They can also be completed by a HCG combined with diamond layer as top mirror, reflecting the pump diode laser and transparent to the VCL emission in the case the pumped and emitted beams are collinear.

Abstract translation: 本发明涉及具有与作为底部反射镜的金刚石层组合的高对比度光栅（HCG）的VCL的新设计。 它们可以通过经典的V形泵送场景，也可以通过从底部方向引入泵浦光束，通过可被设计成在泵浦光的波长处是透明的HCG来实现。 它们也可以通过与金刚石层组合的HCG作为上反射镜来完成，反映泵浦二极管激光器并且在​​泵浦和发射光束共线的情况下对VCL发射是透明的。

公开(公告)号：US08304757B2

公开(公告)日：2012-11-06

申请号：US12877624

申请日：2010-09-08

Applicant: Nobuaki Hatori ,  Tsuyoshi Yamamoto

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto

IPC: H01L29/06 ,  H01L27/15 ,  H01L29/732 ,  H01L21/00

CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/18311 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/3412 ,  H01S5/34313 ,  H01S5/34366

Abstract: A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs.

Abstract translation: 半导体发光器件包括GaAs衬底; 以及设置在所述GaAs衬底上的有源层，所述有源层包括：与所述GaAs衬底晶格匹配的下阻挡层; 设置在下阻挡层上的量子点; 覆盖量子点的一侧的应变松弛层; 以及与所述量子点的顶部接触的上阻挡层，与所述量子点的顶部接触的所述上阻挡层的至少一部分与所述GaAs衬底晶格匹配，并且具有大于所述量子点的带隙的带隙 量子点并且小于GaAs的带隙。

公开(公告)号：US07701991B2

公开(公告)日：2010-04-20

申请号：US11233494

申请日：2005-09-22

Applicant: David M. Bean ,  Yi Qian ,  Daniel E. Pulver

Inventor： David M. Bean ,  Yi Qian ,  Daniel E. Pulver

IPC: H01S3/04 ,  H01S3/14 ,  H01L31/00

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/3215 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34366

Abstract: A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 1.30 and 1.61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.

Abstract translation: 公开了使用铝镓砷化物，砷化镓磷化铟，磷化铟，（AlGaInAs / GaInAsP / InP）材料体系和相关组合的半导体激光二极管。 优化有源层的设计和光学腔的设计，以最小化有源区的温度上升并且最小化活性层温度升高对激光效率的影响。 结果是用于在掺铒波导器件的泵浦或直接用于军事，医疗或商业应用中的波长在1.30和1.61微米之间的高输出功率半导体激光器。

公开(公告)号：US07508857B2

公开(公告)日：2009-03-24

申请号：US11265712

申请日：2005-11-02

Applicant: Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

Inventor： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

Abstract: Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

Abstract translation: 提供半导体激光二极管及其制造方法。 半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得 山脊边; 设置在所述上​​下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。 该方法比制造半导体激光二极管的常规方法简单。 此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

公开(公告)号：US20070071051A1

公开(公告)日：2007-03-29

申请号：US11555703

申请日：2006-11-02

Applicant: Kazushige KAWASAKI ,  Kimio SHIGIHARA

Inventor： Kazushige KAWASAKI ,  Kimio SHIGIHARA

IPC: H01S5/00

CPC classification number: H01L21/3245 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/0095 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/00

Abstract: method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevents the V group element from escaping from the epitaxial structure during heat treatment; heat treating the epitaxial structure at at least 800 degrees C; and removing the insulating layer, thereby enhancing the reliability of the device.

Abstract translation: 制造半导体光学器件的方法包括：形成至少含有可发光的有源层的III-V族半导体材料的外延结构; 在外延结构上形成绝缘层，防止V组元件在热处理过程中从外延结构逸出; 在至少800摄氏度下热处理外延结构; 并且去除绝缘层，从而提高器件的可靠性。

公开(公告)号：US20050163178A1

公开(公告)日：2005-07-28

申请号：US10918358

申请日：2004-08-16

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/323 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/34366 ,  H01S5/34373

Abstract: A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.

Abstract translation: 根据本发明的半导体激光器件包括：光波导层叠结构，具有：由p-InP层构成的第一第一包层; p-AlGaInAs的双异质结层; 由p-InP层构成的第二第一包层; p-InGaAsP的第一光限制层; 具有量子阱结构的InGaAsP的有源层; n-InGaAsP的第二光限制层; 以及由n-InP层构成的第二包覆层，并且在第一第一包层和双异质结层之间的界面处以及在双异质结层和第二第一包层之间的界面处形成第二类型的异质结 层。

公开(公告)号：US20050040408A1

公开(公告)日：2005-02-24

申请号：US10917900

申请日：2004-08-13

Applicant: Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

Inventor： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC: H01S5/343 ,  H01L27/15 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32

CPC classification number: B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

Abstract translation: 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是二甲基肼或氨（NH 3）。

公开(公告)号：US20040264531A1

公开(公告)日：2004-12-30

申请号：US10607887

申请日：2003-06-27

Applicant: Honeywell International Inc.

Inventor： Jae-Hyun Ryou ,  Tzu-Yu Wang ,  Jin K. Kim ,  Gyoungwon Park ,  Hoki Kwon

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2063 ,  H01S5/34313 ,  H01S5/34366

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.

Abstract translation: 一种垂直腔面发射激光器，其具有被增强的侧向氧化氧化的可氧化层。 氧化可以包括在氧化环境中和/或待氧化的层中加入流体形式的氧气，其中有或没有其它流体，例如水蒸汽。 该氧化方法可用于具有相对低的铝含量的层，例如基于InP的结构，或者具有高的铝含量，例如在GaAs基结构中。