公开(公告)号：US20110049592A1

公开(公告)日：2011-03-03

申请号：US12838878

申请日：2010-07-19

申请人： Sung Min YOON ,  Chun Won BYUN ,  Shin Hyuk YANG ,  Sang Hee PARK ,  Soon Won JUNG ,  Seung Youl KANG ,  Chi Sun HWANG ,  Byoung Gon YUN

发明人： Sung Min YOON ,  Chun Won BYUN ,  Shin Hyuk YANG ,  Sang Hee PARK ,  Soon Won JUNG ,  Seung Youl KANG ,  Chi Sun HWANG ,  Byoung Gon YUN

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/6684 ,  B82Y10/00 ,  G11C11/22 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/78391

摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

摘要翻译： 提供一种非易失性存储单元及其制造方法。 非易失性存储单元包括存储晶体管和驱动晶体管。 存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。 驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。 存储晶体管和驱动晶体管设置在同一衬底上。 非易失性存储单元在可见光区域是透明的。