公开(公告)号：US06458613B1

公开(公告)日：2002-10-01

申请号：US09184825

申请日：1998-11-02

申请人： Sung Sik Bae

发明人： Sung Sik Bae

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  G02F1/136227 ,  H01L29/4908

摘要： An etching method for manufacturing a liquid crystal display having TFTs, gate bus lines, data bus lines which include a refractory metal such as Mo, Ta, Ti, MoSi, TaSi or TiSi, and a passivation layer covering such layers, is such that refractory metal is not damaged by an etchant used for patterning the passivation layer. The method includes forming a passivation layer covering the switching element, the gate bus line and the data bus line on the substrate, forming a patterning layer on the passivation layer using a photo-resist wherein the patterning layer has open portions exposing some portions of the passivation layer on the switching element and a start portion of the gate and data bus lines, and removing the exposed portions of the passivation layer using an etching gas including CF4 and H2 gases. A mixing ratio of the H2 gas to the CF4 gas is varied and dependent on the area of the portion of the passivation layer to be removed and is preferably about 1% to about 20%.

摘要翻译： 用于制造具有TFT，栅极总线，包括诸如Mo，Ta，Ti，MoSi，TaSi或TiSi的难熔金属的数据总线的液晶显示器的蚀刻方法以及覆盖这种层的钝化层是这样的：耐火材料 用于图案化钝化层的蚀刻剂不会损坏金属。 该方法包括在衬底上形成覆盖开关元件，栅极总线和数据总线的钝化层，使用光致抗蚀剂在钝化层上形成图案化层，其中图案化层具有暴露部分的开放部分 开关元件上的钝化层和栅极和数据总线的起始部分，以及使用包括CF 4和H 2气体的蚀刻气体去除钝化层的暴露部分。 H2气体与CF4气体的混合比例变化并且取决于待除去的钝化层部分的面积，优选为约1％至约20％。

公开(公告)号：US06337723B1

公开(公告)日：2002-01-08

申请号：US09247455

申请日：1999-02-10

申请人： Sung Sik Bae

发明人： Sung Sik Bae

IPC分类号： G02F1136

CPC分类号： G02F1/13458 ,  G02F1/136213 ,  G02F1/13624

摘要： A method of manufacturing an LCD in which a pixel electrode is formed on a photosensitive passivation layer uses an etching gas including at least one of CF4+H2, CxFy+H2, CxFy+CxFyHz, CxFy+CxFyHz+H2 and CxFyHz. As a result, a surface of the patterned passivation layer is easily and reliably made to be even. Furthermore, the gate insulating layer is simultaneously patterned to form a gate contact hole without experiencing any over-etching and/or undercut portions.

摘要翻译： 在感光钝化层上形成像素电极的LCD的制造方法使用包含CF4 + H2，CxFy + H2，CxFy + CxFyHz，CxFy + CxFyHz + H2和CxFyHz中的至少一种的蚀刻气体。 结果，图案化钝化层的表面容易且可靠地制成均匀。 此外，栅极绝缘层同时被图案化以形成栅极接触孔，而不会经历任何过蚀刻和/或底切部分。