公开(公告)号：US06447605B1

公开(公告)日：2002-09-10

申请号：US09441968

申请日：1999-11-17

申请人： Sung Yoon Chung ,  Suk Pil Kim ,  Byung Sung Kang ,  Si Kyung Choi ,  Suk Joong Kang

发明人： Sung Yoon Chung ,  Suk Pil Kim ,  Byung Sung Kang ,  Si Kyung Choi ,  Suk Joong Kang

IPC分类号： C30B2504

CPC分类号： C30B25/18 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02546

摘要： Disclosed is a method for preparing heteroepitaxial thin films which are free of island structures which have a bad influence on the photoelectric properties and interfacial reactivity of the thin films. These heteroepitaxial thin films are deposited on grooved or curved surfaces of substrates. The use of grooved substrates relieves the coherent elastic strain from the thin films, thereby inhibiting the surface roughening and the island structure formation in the heteroepitaxial thin films. The method can be applied to all of the thin films that show island structures, including GaAs/Si and SiGe/Si typically used in semiconductor devices and various electronic parts, enabling the thin films to be flatly deposited at a significant thickness on various substrates without additionally processing.

摘要翻译： 公开了一种制备异质外延薄膜的方法，该薄膜不含岛结构，对薄膜的光电特性和界面反应性有不良影响。 这些异质外延薄膜沉积在基板的凹槽或弯曲表面上。 使用带槽的衬底减轻了薄膜的相干弹性应变，从而抑制异质外延薄膜中的表面粗糙化和岛状结构的形成。 该方法可以应用于显示岛结构的所有薄膜，包括通常用于半导体器件中的GaAs / Si和SiGe / Si以及各种电子部件，使薄膜能够在各种基板上以显着的厚度平坦地沉积，而无需 额外处理。

公开(公告)号：US06358464B1

公开(公告)日：2002-03-19

申请号：US09693930

申请日：2000-10-23

申请人： Byung Kee Lee ,  Yang Il Jung ,  Ho Yong Lee ,  Suk-Joong Kang ,  Sung Yoon Chung

发明人： Byung Kee Lee ,  Yang Il Jung ,  Ho Yong Lee ,  Suk-Joong Kang ,  Sung Yoon Chung

IPC分类号： C04B3332

CPC分类号： H01G4/1227 ,  C04B35/4682 ,  C04B35/626

摘要： A method for making a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO3-based body is subjected to a pre-heat treatment in a hydrogen (H2) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO3. By virtue of the reducing average grain size of BaTiO3, a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss is obtained. This method provides an advantage in that it is possible to make a BaTiO3-based dielectric having a very small average grain size while having a high relative density in accordance with a simple heat treatment conducted for pure BaTiO3 or even for BaTiO3 added with an additive in a reducing atmosphere at a temperature less than a liquid phase forming temperature, prior to a sintering process for sintering the BaTiO3.

摘要翻译： 一种制备具有高介电常数和低介电损耗的BaTiO3基电介质的方法，其中将BaTiO 3基体在氢（H 2）气氛或含有氢气混合气体的还原气氛中进行预热处理 并且在制造电介质的烧结过程之前，氮：氮= 5〜100％：0〜95％的氮，以获得BaTiO 3的平均粒径的降低。 由于BaTiO 3的平均粒径减小，得到介电常数高，介电损耗低的BaTiO3系电介质。 该方法的优点在于，可以根据纯BaTiO 3或甚至添加添加剂的BaTiO 3的简单热处理，制造具有非常小的平均晶粒尺寸的BaTiO 3基电介质，同时具有高的相对密度 在烧结BaTiO 3的烧结工艺之前，在低于液相形成温度的温度下还原气氛。

公开(公告)号：US08480987B2

公开(公告)日：2013-07-09

申请号：US12633836

申请日：2009-12-09

申请人： Sung Yoon Chung

发明人： Sung Yoon Chung

IPC分类号： C01B25/30

CPC分类号： C01B25/37 ,  H01M4/5825

摘要： Provided are lithium transition metal phosphates where the cation anti-site defects between lithium and transition metals in a lithium transition metal phosphate with a cation well-ordered olivine structure are arranged only in a 1D crystal direction, and a method of preparing the same. The method comprises adding any one selected from the group consisting of an alkali element and an element that has a valence of 5+ or any combination thereof to a solid salt comprising lithium, transition metals, and phosphorus as a starting material to produce a first intermediate material; subjecting the first intermediate to a first heat treatment at a temperature of approximately 250° C. to approximately 400° C. to produce a second amorphous material; and cooling the second intermediate material to room temperature, followed by a second heat treatment at a temperature of approximately 400° C. to approximately 800° C. to produce a final material in which the cation-distribution defect is locally clustered and the distribution has a 1D-oriented arrangement parallel to any one axis direction in the crystal.

摘要翻译： 提供了锂阳离子金属磷酸盐，其中在具有阳离子良好的橄榄石结构的锂过渡金属磷酸盐中的锂和过渡金属之间的阳离子抗位点缺陷仅排列在1D晶体方向上，以及其制备方法。 该方法包括将选自碱金属元素和价数为5+的元素或其任何组合的任何一种添加到包含锂，过渡金属和磷的固体盐中作为起始材料，以产生第一中间体 材料; 在约250℃至约400℃的温度下对第一中间体进行第一次热处理以产生第二非晶材料; 并将第二中间材料冷却至室温，然后在约400℃至约800℃的温度下进行第二次热处理，以产生其中阳离子分布缺陷局部聚集并且分布具有的最终材料 与晶体中的任何一个轴方向平行的1D取向布置。

公开(公告)号：US08465717B2

公开(公告)日：2013-06-18

申请号：US12593291

申请日：2007-12-28

申请人： Sung Yoon Chung

发明人： Sung Yoon Chung

IPC分类号： C01B25/30

CPC分类号： C01B25/45 ,  B82Y30/00 ,  H01M4/5825

摘要： A process for preparing a nanoparticle powder of a lithium transition metal phosphate includes mixing lithium, a transition metal and a phosphorus-containing salt as starting materials, adding an additive to the starting materials in an amount of greater than 0 at % and less than 10 at % to obtain a mixed raw material powder, subjecting the mixed powder to a first heat treatment at a temperature of 250° C. to 400° C. under a gas atmosphere for 2 to 10 hours; and subjecting the first heat-treated product to a second heat treatment at a temperature of 400° C. to 700° C. for 2 to 24 hours to uniformly form crystalline nuclei so as to induce growth of nanocrystalline particles. The additive may be any one element selected from the group consisting of sodium (Na), potassium (K), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), gadolinium (Gd) and erbium (Er).

摘要翻译： 制备锂过渡金属磷酸盐的纳米颗粒粉末的方法包括将锂，过渡金属和含磷盐作为起始原料混合，向原料中加入大于0at％且小于10的量的添加剂 at％以获得混合原料粉末，在气氛下在250℃至400℃的温度下对混合粉末进行第一次热处理2至10小时; 并将第一热处理产物在400℃至700℃的温度下进行第二次热处理2至24小时以均匀地形成晶核，以诱导纳米晶体颗粒的生长。 添加剂可以是选自钠（Na），钾（K），镧（La），铈（Ce），镨（Pr），钕（Nd），钐（Sm），钆 Gd）和铒（Er）。

公开(公告)号：US20100074822A1

公开(公告)日：2010-03-25

申请号：US12593291

申请日：2007-12-28

申请人： Sung Yoon Chung

发明人： Sung Yoon Chung

IPC分类号： C01B25/30 ,  C01B25/37

CPC分类号： C01B25/45 ,  B82Y30/00 ,  H01M4/5825

摘要： Provided is a process for preparing a nanoparticle powder of lithium transition metal phosphate, involving synthesis of lithium transition metal phosphate (LiMPO4) (M=Fe, Mn, Co, Ni, Ti, Cu or any combination thereof) into a nanoparticle powder having a particle size of less than 100 nm to thereby significantly reduce a diffusion distance of lithium ions within particles, which consequently results in full exploitation of a capacity of an electrode material corresponding up to a theoretical capacity thereof and formation of nanoparticles having a high electrical conductivity within a short period of time, and which is also capable of achieving efficient industrial-scale production of a desired compound via a heat treatment at a low temperature of less than 600° C. for a short period of time of less than 4 hours while overcoming a shortcoming of a low electrical conductivity, using solid raw materials. The process comprises mixing lithium, a transition metal and a phosphorus-containing salt as starting materials, with addition of any one element selected from the group consisting of sodium (Na), potassium (K), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), gadolinium (Gd) and erbium (Er) in an amount of less than 10 at % to thereby inhibit nucleation in a first heat treatment, subjecting the reactants to first heat treatment at a temperature of 250° C. to 400° C. for 2 to 10 hours, and subjecting the first heat-treated materials to a second heat treatment at a temperature of 400° C. to 700° C. for 2 to 24 hours to uniformly form crystalline nuclei to induce growth of nanocrystalline particles.

摘要翻译： 提供了制备锂过渡金属磷酸盐的纳米颗粒粉末的方法，包括将锂过渡金属磷酸盐（LiMPO 4）（M = Fe，Mn，Co，Ni，Ti，Cu或其任何组合）合成到具有 颗粒尺寸小于100nm，从而显着降低了锂离子在颗粒内的扩散距离，从而导致充分利用相当于其理论容量的电极材料的容量，并形成具有高电导率的纳米颗粒 短时间内，还可以通过在小于600℃的低温下的热处理在短时间内小于4小时的时间内实现有效的工业规模生产所需化合物，同时克服 导电性低的缺点，使用固体原料。 该方法包括将锂，过渡金属和含磷盐作为原料混合，加入选自钠（Na），钾（K），镧（La），铈（Ce） ，镨（Pr），钕（Nd），钐（Sm），钆（Gd）和铒（Er），其量小于10原子％，从而在第一热处理中抑制成核，使反应物首先加热 在250℃至400℃的温度下处理2至10小时，并将第一热处理材料在400℃至700℃的温度下进行第二次热处理2至24次 小时以均匀地形成晶核以诱导纳米晶体颗粒的生长。